|
Details, datasheet, quote on part number:MTB40N10E
| |
| Part: | MTB40N10E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Power MOSFET 40 Amps, 100 Volts, Package: D2PAK, Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download MTB40N10E datasheet File size : 123 kB |
| Request For quote: | Find where to buy MTB40N10E
|
| |
Datasheet text preview:
MTB40N10E
Preferred Device
Power MOSFET 40 Amps, 100 Volts
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Avalanche Energy Specified · SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GatetoSource Voltage Continuous NonRepetitive (tp 10 ms) Drain Current Continuous Drain Current Continuous @ 100°C Drain Current Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1.) Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 75 Vdc, VGS = 10 Vdc, Peak IL = 40 Apk, L = 1.0 mH, RG = 25 ) Thermal Resistance Junction to Case Junction to Ambient Junction to Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 100 100 ± 20 ± 40 40 29 140 169 1.35 2.5 55 to 150 800 1 Gate T40N10E Y WW Unit Vdc Vdc 4 Vdc Vpk Adc Apk Watts W/°C Watts °C mJ T40N10E YWW 1 2 3 D2PAK CASE 418B STYLE 2
http://onsemi.com
40 AMPERES 100 VOLTS RDS(on) = 40 m
NChannel D
G S
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
TJ, Tstg EAS
°C/W RJC RJA RJA TL 0.74 62.5 50 260 °C
2 Drain
3 Source
= Device Code = Year = Work Week
ORDERING INFORMATION
Device MTB40N10E MTB40N10ET4 Package D2PAK D2PAK Shipping 50 Units/Rail 800/Tape & Reel
1. When surface mounted to an FR4 board using the minimum recommended pad size.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 Rev. 2
Publication Order Number: MTB40N10E/D
MTB40N10E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 100 Vdc, VGS = 0 Vdc) (VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 20 Adc) DraintoSource OnVoltage (VGS = 10 Vdc) (ID = 40 Adc) (ID = 20 Adc, TJ = 125°C) Forward Transconductance (VDS = 8.4 Vdc, ID = 20 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Fi Figure 8) 8) (VDS = 80 Vdc, ID = 40 Adc, VGS = 10 Vdc) (VDD = 50 Vdc, ID = 40 Adc, VGS = 10 Vdc, 10 Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 40 Adc, VGS = 0 Vdc) (IS = 40 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (See Fi Figure 14) 14) (IS = 40 Adc, VGS = 0 Vdc, 40 Adc Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. 4. Reflects typical values. Cpk + ax limit Typ 3 sigma LD LS 7.5 3.5 4.5 nH trr ta tb Q RR VSD 0.96 0.88 152 117 35 1.0 1.0 µC ns Vdc 19 165 75 97 80 15 40 29 40 330 150 190 110 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 2305 620 205 3230 1240 290 pF (Cpk 2.0) (Note 4.) VGS(th) 2.0 (Cpk 2.0) (Note 4.) RDS(on) VDS(on) gFS 17 21 1.9 1.7 mhos 0.033 0.04 Vdc 2.9 6.7 4.0 Vdc mV/°C Ohms V(BR)DSS (Cpk 2.0) (Note 4.) IDSS IGSS 10 100 100 nAdc 100 112 Vdc mV/°C µAdc Symbol Min Typ Max Unit
M
http://onsemi.com
2
MTB40N10E
TYPICAL ELECTRICAL CHARACTERISTICS
80 I D , DRAIN CURRENT (AMPS) 70 60 50 40 30 20 10 0 0 1 3 4 5 6 7 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 5V 6V 80 I D , DRAIN CURRENT (AMPS) 70 60 50 40 30 20 10 10 0 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 8 TJ = -55°C VDS 10 V 25°C
VGS = 10 V
8V 9V
TJ = 25°C 7V
100°C
9
Figure 1. OnRegion Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0
VGS = 10 V TJ = 100°C
0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPS) 70 80 VGS = 10 V TJ = 25°C
25°C -55°C
15 V
10
20
30
40
50
60
70
80
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
Figure 4. OnResistance versus Drain Current and Gate Voltage
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 VGS = 10 V ID = 20 A I DSS , LEAKAGE (nA)
1000
VGS = 0 V
TJ = 125°C
100 100°C
10
-25
0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C)
125
150
1.0
0
10
20 30 40 60 70 80 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
90
100
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
http://onsemi.com
3
|
|
