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Details, datasheet, quote on part number:MTB4N80ET4
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB4N80E/D
TM Data Sheet TMOS E-FET.TM High Energy Power FET D2PAK for Surface Mount
Designer's
MTB4N80E
Motorola Preferred Device
NChannel EnhancementMode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage M O S F E T uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutat i o n modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM
®
D
G CASE 418B02, Style 2 D2PAK S
· Robust High Voltage Termination · Avalanche Energy Specified · SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature · Short Heatsink Tab Manufactured -- Not Sheared · Specially Designed Leadframe for Maximum Power Dissipation · Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage -- Continuous GateSource Voltage -- NonRepetitive (tp 10 ms) Drain Current -- Continuous Drain Current -- Continuous @ 100°C Drain Current -- Single Pulse (tp 10 µs)
Symbol VDSS VDGR VGS VGSM ID ID IDM PD
Value 800 800 ± 20 ± 40 4.0 2.9 12 125 1.0 2.5 55 to 150 320 1.0 62.5 50 260
Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts °C mJ °C/W
Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy -- Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 8.0 Apk, L = 10 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient, when mounted with the minimum recommended pad size Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
TJ, Tstg EAS RJC RJA RJA TL
°C
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value. REV 4
©Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996
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MTB4N80E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 800 Vdc, VGS = 0 Vdc) (VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 2.0 Adc) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 4.0 Adc) (ID = 2.0 Adc, TJ = 125°C) Forward Transconductance (VDS = 15 Vdc, ID = 2.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 8) Figure 8) (VDS = 400 Vdc, ID = 4 0 Ad , 400 Vd , 4.0 Adc, VGS = 10 Vdc) 4.0 Adc, (VDD = 400 Vdc, ID = 4 0 Ad 400 Vd VGS = 10 Vdc 10 Vdc, RG = 9.1 ) ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (1) (IS = 4.0 Adc, VGS = 0 Vdc) (IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD -- -- trr Vd , (IS = 4 0 Ad , VGS = 0 Vdc, 4.0 Adc, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. LD LS -- -- 4.5 7.5 -- -- nH nH ta tb Q RR -- -- -- -- 0.812 0.7 557 100 457 2.33 1.5 -- -- -- -- -- µC ns Vdc -- -- -- -- -- -- -- -- 13 36 40 30 36 7.0 16.5 12 30 90 80 75 80 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, 25 Vdc Vdc f = 1.0 MHz) Ciss Coss Cr s s -- -- -- 1320 187 72 2030 400 160 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 2.0 8.24 -- 4.3 12 10 -- mhos -- 3.0 7.0 1.95 4.0 -- 3.0 Vdc mV/°C Ohm Vdc V(BR)DSS 800 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- 1.02 -- -- Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Figure 14) Figure 14)
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Motorola TMOS Power MOSFET Transistor Device Data
MTB4N80E
TYPICAL ELECTRICAL CHARACTERISTICS
8 7 I D , DRAIN CURRENT (AMPS) 6 5 4 3 2 1 0 0 2 4 4V 6 8 10 12 14 16 18 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 20 5V TJ = 25°C I D , DRAIN CURRENT (AMPS) VGS = 10 V 6V 8 7 6 5 4 3 2 1 0 2.0 2.4 TJ = 55°C 25°C 100°C VDS 10 V
2.8 3.2 3.6 4.0 4.4 4.8 5.2 VGS, GATETOSOURCE VOLTAGE (VOLTS)
5.6
Figure 1. OnRegion Characteristics
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
4.6 VGS = 10 V 3.8 TJ = 100°C
2.6 2.5 2.4 2.3 2.2 2.1 2.0 1.9 1.8 1 2 3 4 5 6 ID, DRAIN CURRENT (AMPS) 7 8 VGS = 10 V 15 V TJ = 25°C
3.0 25°C
2.2
1.4 55°C 0.6 1 2 3 5 4 6 ID, DRAIN CURRENT (AMPS) 7 8
Figure 3. OnResistance versus Drain Current and Temperature
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAINTOSOURCE RESISTANCE (NORMALIZED)
2.2 VGS = 10 V ID = 2 A
10000 VGS = 0 V TJ = 125°C 1000 I DSS , LEAKAGE (nA) 100°C
1.8
1.4
100 25°C
1.0
10
0.6
0.2 50
1 25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) 125 150 0 100 300 500 600 200 400 700 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 800
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
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