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Details, datasheet, quote on part number:MTB50N06V
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| Part: | MTB50N06V |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | 42 Amp Tmos V D2pak N-channel, VDSS 60 |
| Company: | ON Semiconductor |
| Datasheet: | Download MTB50N06V datasheet File size : 297 kB |
| Request For quote: | Find where to buy MTB50N06V
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Datasheet text preview:
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB50N06V/D
TMOS VTM Power Field Effect Transistor D2PAK for Surface Mount
TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and c o m m u t a t i o n modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. New Features of TMOS V · Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology · Faster Switching than EFET Predecessors
TM Data Sheet
MTB50N06V
Motorola Preferred Device
NChannel EnhancementMode Silicon Gate
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
TM
D
G S CASE 418B02, Style 2 D2PAK
Features Common to TMOS V and TMOS EFETs · Avalanche Energy Specified · IDSS and VDS(on) Specified at Elevated Temperature · Static Parameters are the Same for both TMOS V and TMOS EFET · Surface Mount Package Available in 16 mm 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage -- Continuous GateSource Voltage -- NonRepetitive (tp 10 ms) Drain Current -- Continuous @ 25°C Drain Current -- Continuous @ 100°C Drain Current -- Single Pulse (tp 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy -- Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 42 Apk, L = 0.454 µH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient (1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds (1) When surface mounted to an FR4 board using the minimum recommended pad size. Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 60 60 ± 20 ± 25 42 30 147 125 0.83 3.0 55 to 175 400 1.2 62.5 50 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts °C mJ °C/W
TJ, Tstg EAS RJC RJA RJA TL
°C
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
Designer's is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
© Motorola TMOS Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1
MTB50N06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 21 Adc) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 42 Adc) (ID = 21 Adc, TJ = 150°C) Forward Transconductance (VDS = 6.25 Vdc, ID = 20 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 48 Vdc, ID = 42 Adc, VGS = 10 Vdc) (VDD = 25 Vdc, ID = 42 Adc, VGS = 10 Vdc, RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (1) (IS = 42 Adc, VGS = 0 Vdc) (IS = 42 Adc, VGS = 0 Vdc, TJ = 150°C) VSD -- -- trr (IS = 42 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. LD -- -- LS -- 3.5 4.5 7.5 -- -- -- nH nH ta tb Q RR -- -- -- -- 1.06 0.99 84 73 11 0.28 2.5 -- -- -- -- -- µC ns Vdc -- -- -- -- -- -- -- -- 12 122 64 54 47 9 21 16 20 250 110 90 70 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss -- -- -- 1644 465 112 2320 660 230 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 16 1.4 -- 23 1.7 1.6 -- mhos -- 2.7 3.0 0.025 4.0 -- 0.028 Vdc mV/°C Ohm Vdc V(BR)DSS 60 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- 69 -- -- Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Figure 14)
2
Motorola TMOS Power MOSFET Transistor Device Data
MTB50N06V
TYPICAL ELECTRICAL CHARACTERISTICS
100 I D , DRAIN CURRENT (AMPS) 80 TJ = 25°C VGS = 10 V 9V 8V I D , DRAIN CURRENT (AMPS) 7V 80 100 VDS 10 V 100°C 25°C TJ = 55°C
60 6V 40 5V
60
40
20
20
0 0 0.8 1.6 2.4 3.2 4 VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
0 1 2 3 4 5 6 7 8 9 VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
R DS(on) , DRAINTOSOURCE RESISTANCE (OHMS) R DS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.04
VGS = 10 V TJ = 100°C 25°C
0.033
TJ = 25°C
0.034
0.03
0.028
0.027
VGS = 10 V
0.022
0.016
0.024
15 V
55°C 0 20 40 60 80 100
0.01 ID, DRAIN CURRENT (AMPS)
0.021
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAINTOSOURCE RESISTANCE (NORMALIZED)
2.5 VGS = 10 V ID = 21 A
1000 VGS = 0 V TJ = 125°C I DSS , LEAKAGE (nA) 100 100°C 10 25°C
2
1.5
1
0.5 0 50
25
0
25
50
75
100
125
150
175
1
0
10
20
30
40
50
60
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
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