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Details, datasheet, quote on part number:MTB50N06VLT4
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| Part: | MTB50N06VLT4 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Replacement Part: NTB45N06L, Package: D2PAK, Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download MTB50N06VLT4 datasheet File size : 103 kB |
| Request For quote: | Find where to buy MTB50N06VLT4
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Datasheet text preview:
MTB50N06VL
Preferred Device
Power MOSFET 42 Amps, 60 Volts, Logic Level
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Avalanche Energy Specified · IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GatetoSource Voltage Continuous NonRepetitive (tp 10 ms) Drain Current Continuous @ 25°C Drain Current Continuous @ 100°C Drain Current Single Pulse (tp 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1.) Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5 Vdc, Peak IL = 42 Apk, L = 0.3 mH, RG = 25 ) Thermal Resistance Junction to Case Junction to Ambient Junction to Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 60 60 ±15 ±20 42 30 147 125 0.83 3.0 55 to 175 265 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts °C mJ 2 3 TJ, Tstg EAS 4 D2PAK CASE 418B STYLE 2 G S
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42 AMPERES 60 VOLTS RDS(on) = 32 m
NChannel D
1
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
°C/W RJC RJA RJA TL 1.2 62.5 50 260 °C 1 Gate
T50N06VL YWW
2 Drain
3 Source
1. When surface mounted to an FR4 board using the minimum recommended pad size.
T50N06VL = Device Code Y = Year WW = Work Week
ORDERING INFORMATION
Device MTB50N06VL MTB50N06VLT4 Package D2PAK D2PAK Shipping 50 Units/Rail 800/Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
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November, 2000 Rev. 3
Publication Order Number: MTB50N06VL/D
MTB50N06VL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = .25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) GateBody Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (VGS = 5 Vdc, ID = 21 Adc) DraintoSource OnVoltage (VGS = 5 Vdc, ID = 42 Adc) (VGS = 5 Vdc, ID = 21 Adc, TJ = 150°C) Forward Transconductance (VDS = 6 Vdc, ID = 20 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Fi Figure 8) 8) (VDS = 48 Vdc, ID = 42 Adc, VGS = 5 Vdc) (VDD = 30 Vdc, ID = 42 Adc, VGS = 5 Vdc, Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 42 Adc, VGS = 0 Vdc) (IS = 42 Adc, VGS = 0 Vdc, TJ = 150°C) VSD trr (IS = 42 Adc, VGS = 0 Vdc, 42 Adc Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. LD LS 7.5 3.5 4.5 nH nH ta tb Q RR 1.03 0.94 91.1 63.8 27.3 0.299 2.5 µC ns Vdc 16 355 80 160 40 11 20 16 30 701 160 320 60 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 1570 508 135 2200 710 270 pF VGS(th) 1.0 RDS(on) VDS(on) gFS 17 1.2 28 1.6 1.5 Mhos 1.4 4.3 0.025 2.0 0.032 Vdc mV/°C Ohms Vdc V(BR)DSS 60 IDSS IGSS 10 100 100 nAdc 64 Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time
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MTB50N06VL
TYPICAL ELECTRICAL CHARACTERISTICS
90 80 I D , DRAIN CURRENT (AMPS) 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3V 6V 90 80 I D , DRAIN CURRENT (AMPS) 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 VDS 10 V TJ = -55°C 25°C 100°C
TJ = 25°C 8V 7V
VGS = 10 V
5V
4V
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.06 0.05 0.04 0.03 0.02 0.01 0
VGS = 5 V TJ = 100°C 25°C - 55°C
0.04 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 0
TJ = 25°C VGS = 5 V 10 V
0
9
18
36 45 54 63 27 ID, DRAIN CURRENT (AMPS)
72
81
90
10
20
30 60 40 50 ID, DRAIN CURRENT (AMPS)
70
80
90
Figure 3. OnResistance versus Drain Current and Temperature
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 - 50
VGS = 5 V ID = 21 A I DSS , LEAKAGE (nA)
1000
VGS = 0 V
TJ = 125°C 100
100°C
- 25
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C)
150
175
10
0
10 20 40 50 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
60
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
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