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Part: MTD20N06VT4
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: Replacement Part: NTD20N06, Package: Dpak, Pins=3
Company: ON Semiconductor
Datasheet: Download MTD20N06VT4 datasheet File size : 32 kB
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Datasheet text preview:
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD20N06V/D
TMOS VTM Power Field Effect Transistor DPAK for Surface Mount
TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating a r e a s are critical and offer additional safety margin against unexpected voltage transients. New Features of TMOS V · Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology · Faster Switching than EFET Predecessors
TM Data Sheet
MTD20N06V
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
NChannel EnhancementMode Silicon Gate
TM
D
G S CASE 369A13, Style 2 DPAK Surface Mount
Features Common to TMOS V and TMOS EFETS · Avalanche Energy Specified · IDSS and VDS(on) Specified at Elevated Temperature · Static Parameters are the Same for both TMOS V and TMOS EFET · Surface Mount Package Available in 16 mm 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GatetoSource Voltage -- Continuous GatetoSource Voltage -- Nonrepetitive (tp 10 ms) Drain Current -- Continuous Drain Current -- Continuous @ 100°C Drain Current -- Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ 25°C(1) Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy -- Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 20 Apk, L = 1.0 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient(1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds (1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
Symbol VDSS VDGR VGS VGSM ID ID IDM PD
Value 60 60 ± 20 ± 25 20 13 70 60 0.4 2.1 55 to 175 200 2.5 100 71.4 260
Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts °C mJ °C/W
TJ, Tstg EAS RJC RJA RJA TL
°C
EFET, Designer's, and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
REV 1
© Motorola TMOS Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1
MTD20N06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 10 Adc) DraintoSource OnVoltage (VGS = 10 Vdc, ID = 10 Adc) (VGS = 10 Vdc, ID = 10 Adc, TJ = 150°C) Forward Transconductance (VDS = 6.0 Vdc, ID = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 20 Adc, VGS = 10 Vdc) (VDD = 30 Vdc, ID = 20 Adc, VGS = 10 Vdc, RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (1) (IS = 20 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C) VSD -- -- trr (IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) Reflects typical values. Max limit Typ Cpk = 3 x SIGMA LD -- -- LS -- 7.5 -- 3.5 4.5 -- -- nH nH ta tb Q RR -- -- -- -- 1.05 0.96 60 52 8.0 0.172 1.6 -- -- -- -- -- µC ns Vdc -- -- -- -- -- -- -- -- 8.7 77 26 46 28 4.0 9.0 8.0 20 150 50 90 40 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss -- -- -- 590 180 40 830 250 80 pF (Cpk 2.0) (3) VGS(th) 2.0 -- (Cpk 2.0) (3) RDS(on) -- VDS(on) -- -- gFS 6.0 -- -- 8.0 2.0 1.9 -- mhos 0.065 0.080 Vdc 2.8 5.0 4.0 -- Vdc mV/°C Ohm (Cpk 2.0) (3) V(BR)DSS 60 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- 69 -- -- Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time
2
Motorola TMOS Power MOSFET Transistor Device Data
MTD20N06V
TYPICAL ELECTRICAL CHARACTERISTICS
40 I D , DRAIN CURRENT (AMPS) 35 TJ = 25°C 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 5V 4V 10 6V 7V VGS = 10V 9V 8V I D , DRAIN CURRENT (AMPS) 40 35 30 25 20 15 10 5 0 2 3 4 5 6 7 8 9 100°C VDS 10 V TJ = 55°C
25°C
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
R DS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 5 10 15 25 20 30 ID, DRAIN CURRENT (AMPS) 35 40 25°C 55°C TJ = 100°C VGS = 10 V
0.11 TJ = 25°C 0.1 0.09 0.08 0.07 0.06 0.05 0.04 15 V VGS = 10 V
0
5
10
20 30 15 25 ID, DRAIN CURRENT (AMPS)
35
40
Figure 3. OnResistance versus Drain Current and Temperature
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAINTOSOURCE RESISTANCE (NORMALIZED)
2.0 1.75 1.5 1.25 1 0.75 0.5 0.25 0 50 25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 175 I DSS , LEAKAGE (nA) VGS = 10 V ID = 10 A
35 VGS = 0 V 30 25 20 15 10 5 0 100°C TJ = 125°C
0
50 10 20 30 40 VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
60
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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