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Part: MTD20P03HDL1
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: Power MOSFET 20 Amps, 30 Volts, Logic Level, Package: Dpak Single Gauge Insertion Mount, Pins=4
Company: ON Semiconductor
Datasheet: Download MTD20P03HDL1 datasheet File size : 32 kB
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Datasheet text preview:
MTD20P03HDL
Preferred Device
Power MOSFET 20 Amps, 30 Volts, Logic Level
P-Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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V(BR)DSS 30 V RDS(on) TYP 90 mW@5.0 V ID MAX 20 A (Note 1)
· Avalanche Energy Specified · Source-to-Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage - Continuous - Non-Repetitive (tpv10 ms) Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tpv10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 19 Apk, L = 1.1 mH, RG = 25 ) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 30 30 "15 "20 19 12 57 75 0.6 1.75 - 55 to 150 200 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ 12 3 DPAK CASE 369C Style 2 4 4
P-Channel D
G S
MARKING DIAGRAMS
4 Drain YWW 20P 03HL 2 1 3 Drain Gate Source 4 Drain 1 YWW 20P 03HL 123 Gate Drain Source Package DPAK Shipping 75 Units/Rail 75 Units/Rail 2500 Tape & Reel DPAK Publication Order Number: MTD20P03HDL/D
TJ, Tstg EAS
3 DPAK CASE 369D Style 2 20P03HL Device Code Y = Year WW = Work Week
2
°C/W R J C R J A R J A TL 1.67 100 71.4 260 °C
ORDERING INFORMATION
Device MTD20P03HDL
1 When surface mounted to an FR-4 board using the minimum recommended pad size. 2 When surface mounted to an FR-4 board using the 0.5 sq.in. drain pad size.
DPAK MTD20P03HDL-1 Straight Lead MTD20P03HDLT4
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2003
1
August, 2003 - Rev. 5
MTD20P03HDL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate-Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (VGS = 4.0 Vdc, ID = 10 Adc) (VGS = 5.0 Vdc, ID = 9.5 Adc) Drain-to-Source On-Voltage (VGS = 5.0 Vdc) (ID = 19 Adc) (ID = 9.5 Adc, TJ = 125°C) Forward Transconductance (VDS = 8.0 Vdc, ID = 9.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (See Fi Figure 8) 8) (VDS = 24 Vdc, ID =19 Adc, 19 VGS = 5.0 Vdc) (VDD = 15 Vdc, ID = 19 Adc, VGS = 5.0 Vdc, 5 0 Vdc RG = 1.3 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (Cpk 2.0) (Note 5) Reverse Recovery Time (See Fi Figure 15) 15) (IS = 19 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 3 Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 4 Switching characteristics are independent of operating junction temperature. 5 Reflects typical values. Cpk = Absolute Value of Spec (Spec-AVG/3.516 µA). LD - LS - 7.5 - 4.5 - nH nH (IS = 19 Adc, VGS = 0 Vdc) (IS = 19 Adc, VGS = 0 Vdc, TJ = 125°C) VSD - - trr ta tb QRR - - - - 3.1 2.56 78 50 28 0.209 3.4 - - - - - µC ns Vdc - - - - - - - - 18 178 21 72 15 3.0 11 8.2 25.2 246.4 26.6 98 22.4 - - - nC ns (VDS = 25 Vdc, VGS = 0 Vdc, 25 Vd Vd f = 1.0 MHz) Ci s s Co s s Crss - - - 770 360 130 1064 504 182 pF (Cpk 2.0) (Note 5) VGS(th) 1.0 - (Cpk 2.0) (Note 5) RD S ( o n ) - VDS(on) - - gFS 5.0 0.94 - 6.0 2.2 1.9 - mhos 120 90 - 99 Vdc 1.5 4.0 2.0 - Vdc mV/°C m (Cpk 2.0) (Note 5) V(BR)DSS 30 - IDSS - - IGSS - - - - 10 100 100 nAdc - 15 - - Vdc mV/°C µAdc Symbol Min Typ Max Unit
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2
MTD20P03HDL
TYPICAL ELECTRICAL CHARACTERISTICS
40 TJ = 25°C I D , DRAIN CURRENT (AMPS) 32 VGS = 10 V 8V 6V 5V I D , DRAIN CURRENT (AMPS) 32 4.5 V 24 4V 16 3.5 V 8 0 0 1 2 3 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 3V 2.5 V 5 40
VDS 5 V
TJ = - 55°C 25°C 100°C
24
16
8 0 1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.16
VGS = 5 V
0.16
TJ = 25°C
0.14 TJ = 100°C 0.12 25°C
0.14
0.12 VGS = 5 V
0.10
0.10
0.08 0.06 0 4 8 12 16
- 55°C
0.08 10 V 0.06 0 4 8 12 16 20 24 28 32 36 40 ID, DRAIN CURRENT (AMPS)
20
24
28
32
36
40
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Drain Current and Temperature
Figure 4. On-Resistance versus Drain Current and Gate Voltage
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
1.3 VGS = 5 V ID = 10 A 1.2 I DSS, LEAKAGE (nA)
100 VGS = 0 V TJ = 125°C
1.1
10
1.0
0.9 0.8 - 50
100°C
- 25
0
25
50
75
100
125
150
1
0
4
8
12
16
20
24
28
32
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-To-Source Leakage Current versus Voltage
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3
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