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Details, datasheet, quote on part number:MTD20P06HDLT4
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| Part: | MTD20P06HDLT4 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Power MOSFET 20 Amps, 60 Volts, Logic Level, Package: Dpak, Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download MTD20P06HDLT4 datasheet File size : 136 kB |
| Request For quote: | Find where to buy MTD20P06HDLT4
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Datasheet text preview:
MTD20P06HDL
Preferred Device
Power MOSFET 20 Amps, 60 Volts, Logic Level
PChannel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a draintosource diode with a fast recovery time. Designed for lowvoltage, highspeed switching applications in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients. · Ultra Low RDS(on), HighCell Density, HDTMOS · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature · Avalanche Energy Specified
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage Continuous NonRepetitive (tpv10 ms) Drain Current Continuous Continuous @ 100°C Single Pulse (tpv10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C (Note 1.) Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 15 Apk, L = 2.7 mH, RG = 25 ) Thermal Resistance JunctiontoCase JunctiontoAmbient JunctiontoAmbient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 60 60 "15 "20 15 9.0 45 72 0.58 1.75 55 to 150 300 Unit Vdc Vdc Vdc Vpk 4 Adc Apk Watts W/°C Watts °C 12 3 Y WW T CASE 369A DPAK STYLE 2 = Year = Work Week = MOSFET
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20 AMPERES 60 VOLTS RDS(on) = 175 m
PChannel D
G S
MARKING DIAGRAM
YWW T 20P06HL
TJ, Tstg EAS
PIN ASSIGNMENT
mJ 4 Drain
°C/W RJC RJA RJA TL 1.73 100 71.4 260 °C
1 Gate
2 Drain
3 Source
1. When surface mounted to an FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
Device MTD20P06HDL MTD20P06HDLT4 Package DPAK DPAK Shipping 75 Units/Rail 2500 Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
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November, 2000 Rev. 3
Publication Order Number: MTD20P06HDL/D
MTD20P06HDL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ±15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 5.0 Vdc, ID = 7.5 Adc) DrainSource OnVoltage (VGS = 5.0 Vdc) (ID = 15 Adc) (ID = 7.5 Adc, TJ = 125°C) Forward Transconductance (VDS = 10 Vdc, ID = 7.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 15 Adc, VGS = 5.0 Vdc) (VDS = 30 Vdc, ID = 15 Adc, VGS = 5.0 Vdc, 5 0 Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 15 Adc, VGS = 0 Vdc) (IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr (IS = 15 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. LD LS 4.5 7.5 nH nH ta tb Q RR 2.5 1.9 64 50 14 0.177 3.0 µC ns Vdc 19 175 41 68 20.6 3.7 7.6 8.4 38 350 82 136 29 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 850 210 66 1190 290 130 pF VGS(th) 1.0 RDS(on) VDS(on) gFS 9.0 2.3 1.6 11 3.0 2.0 mhos 1.7 3.9 143 2.0 175 Vdc mV/°C m Vdc V(BR)DSS 60 IDSS IGSS 1.0 10 100 nAdc 81.3 Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time
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MTD20P06HDL
TYPICAL ELECTRICAL CHARACTERISTICS
30 25 I D , DRAIN CURRENT (AMPS) 20 15 10 5V 5 0 0 1 2 3 4 5 6 7 8 9 4V 10 30 8V I D , DRAIN CURRENT (AMPS) 7V 25 20 15 10 5 0 1 2 3 4 5 6 100°C
TJ = 25°C
VGS = 10 V
9V
VDS 5 V TJ = - 55°C 25°C
6V
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.40 0.32 0.24 TJ = 100°C 0.16 0.08 0 25°C - 55°C RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.275 0.250 0.225 0.200 0.175 0.150 0.125 0.100 0
Figure 2. Transfer Characteristics
VGS = 5 V
TJ = 25°C
VGS = 5 V 10 V 5 10 15 20 25 30
0
5
10
15
20
25
30
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
100
Figure 4. OnResistance versus Drain Current and Gate Voltage
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 - 50
VGS = 5 V ID = 7.5 A
VGS = 0 V
I DSS, LEAKAGE (nA)
TJ = 125°C 10 100°C
- 25
0
25
50
75
100
125
150
1
0
10
20
30
40
50
60
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
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