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Part: MTD2955E
Category:
Description: Tmos E-FET Power Field Effect Transistor Dpak For Surface Mount
Company: ON Semiconductor
Datasheet: Download MTD2955E datasheet File size : 32 kB
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MTD2955E
Preferred Device
TMOS E-FET.TM Power Field Effect Transistor DPAK for Surface Mount
P-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Avalanche Energy Specified · Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature · Surface Mount Package Available in 16 mm, 13 inch / 2500 Unit Tape & Reel, Add T4 Suffix to Part Number · Replaces the MTD2955
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TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 W
D
G S
MARKING DIAGRAM
YWW xxxxxxxx
DPAK SUFFIX CASE 369A Style 2 xxxxxxxxx Y WW
= Specific Device Code = Year = Work Week
ORDERING INFORMATION
Device MTD2955ET4 Package DPAK Shipping 2500/ Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2003
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April, 2003 - Rev. 5
Publication Order Number: MTD2955E/D
MTD2955E
MAXIMUM RATINGS (TC = 25°C Unless Otherwise Noted)
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 MW) Gate-Source Voltage Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp v 10 ms) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, When Mounted to Minimum Recommended Pad Size Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting T J = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 3.0 mH, RG = 25 W) Thermal Resistance Junction-to-Case Junction-to-Ambient Junction-to-Ambient, When Mounted to Minimum Recommended Pad Size Maximum Temperature for Soldering Purposes, 1/8" From Case for 10 Seconds - Continuous - Non-Repetitive (tp 10 ms) Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 60 60 $ 15 $ 25 12 7.0 36 75 0.6 1.75 - 55 to 150 216 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts °C mJ °C/W Rq J C Rq J A Rq J A TL 1.67 100 71.4 260 °C
TJ, Tstg EAS
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MTD2955E
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless Otherwise Noted)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate-Body Leakage Current (VGS = ±15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 6.0 Adc) Drain-Source On-Voltage (VGS = 10 Vdc) (ID = 12 Adc) (ID = 6.0 Adc, TJ = 125°C) Forward Transconductance (VDS = 13 Vdc, ID = 6.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (Figure 8) 8) (VDS = 48 Vdc, ID = 12 Adc, VGS = 10 Vdc) (VDD = 30 Vdc, ID = 12 Adc, VGS = 10 Vdc, 10 Vdc RG = 9.1 W) ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (Note 1) (IS = 12 Adc, VGS = 0 Vdc) (IS = 12 Adc, VGS = 0 Vdc, TJ = 125°C) VSD - - trr (IS = 12 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) ta tb QRR INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25" from package to source bond pad) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. LD LS - - 4.5 7.5 - - nH - - - - 2.2 1.8 100 75 25 0.475 3.8 - - - - - mC ns Vdc - - - - - - - - 9.0 39 17 8.0 16 3.0 6.0 5.0 20 80 35 20 32 - - - nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ci s s Co s s Crss - - - 565 225 45 700 315 100 pF VGS(th) 2.0 - RD S ( o n ) VDS(on) - - gFS 3.0 - - 4.8 4.3 3.8 - mhos - - 3.0 0.26 4.0 - 0.30 Vdc mV/°C Ohm Vdc V(BR)DSS 60 - IDSS - - IGSS - - - - 10 100 100 nAdc - 85 - - Vdc mV/°C mAdc Symbol Min Typ Max Unit
Reverse Recovery Time (Figure 14) 14)
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