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Part: MTD2955VT4
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: Power MOSFET 12 Amps, 60 Volts, Package: Dpak, Pins=3
Company: ON Semiconductor
Datasheet: Download MTD2955VT4 datasheet File size : 32 kB
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Datasheet text preview:
MTD2955V Power MOSFET 12 Amps, 60 Volts
PChannel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Avalanche Energy Specified · IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GatetoSource Voltage Continuous Nonrepetitive (tp 10 ms) Drain Current Continuous Drain Current Continuous @ 100°C Drain Current Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ 25°C (Note 1.) Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25 ) Thermal Resistance Junction to Case Junction to Ambient Junction to Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 60 60 ± 20 ± 25 12 8.0 42 60 0.4 2.1 55 to 175 216 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts °C mJ 4 12 3 Y WW T CASE 369A DPAK STYLE 2 = Year = Work Week = MOSFET YWW T 2955V G S
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12 AMPERES 60 VOLTS RDS(on) = 230 m
PChannel D
MARKING DIAGRAM
TJ, Tstg EAS
°C/W RJC RJA RJA TL 2.5 100 71.4 260 °C
PIN ASSIGNMENT
4 Drain
1. When surface mounted to an FR4 board using the minimum recommended pad size.
1 Gate
2 Drain
3 Source
ORDERING INFORMATION
Device MTD2955V MTD2955V1 MTD2955VT4 Package DPAK DPAK DPAK Shipping 75 Units/Rail 75 Units/Rail 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 Rev. 4
Publication Order Number: MTD2955V/D
MTD2955V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 6.0 Adc) DraintoSource OnVoltage (VGS = 10 Vdc, ID = 12 Adc) (VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150°C) Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 12 Adc, VGS = 10 Vdc) (VDD = 30 Vdc, ID = 12 Adc, VGS = 10 Vdc, 10 Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (Note 2.) (IS = 12 Adc, VGS = 0 Vdc) (IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C) VSD trr (IS = 12 Adc, VGS = 0 Vdc, 12 Adc Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. 4. Reflects typical values. Max limit Typ Cpk = 3 x SIGMA LD LS 7.5 3.5 4.5 nH nH ta tb Q RR 1.8 1.5 115 90 25 0.53 3.0 µC ns Vdc 15 50 24 39 19 4.0 9.0 7.0 30 100 50 80 30 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) (Cpk 2.0) (Note 4.) (Cpk 2.0) (Note 4.) V(BR)DSS 60 IDSS IGSS VGS(th) 2.0 (Cpk 1.5) (Note 4.) RDS(on) VDS(on) gFS Ciss Coss Cr s s 3.0 5.0 550 200 50 2.9 2.5 770 280 100 mhos pF 0.185 0.230 Vdc 2.8 5.0 4.0 10 100 100 nAdc Vdc mV/°C Ohm 58 Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time
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MTD2955V
TYPICAL ELECTRICAL CHARACTERISTICS
25 I D , DRAIN CURRENT (AMPS) 20 15 10 5 0 7V 24 9V 8V I D , DRAIN CURRENT (AMPS) 21 18 15 12 9 6 3 10 0 2 3 4 5 6 7 8 9 10
TJ = 25°C
VGS = 10 V
VDS 10 V
TJ = - 55°C 25°C
100°C
6V
5V 0 1 2 3 4 5 6 7 8 9
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.250
Figure 2. Transfer Characteristics
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0 3 6 9 15 18 12 ID, DRAIN CURRENT (AMPS) 21 24 25°C - 55°C VGS = 10 V TJ = 100°C
0.225 0.200 0.175
TJ = 25°C VGS = 10 V
0.150
15 V
0.125 0.100 0.075 0.050 0 3 6 9 18 12 15 ID, DRAIN CURRENT (AMPS) 21 24
Figure 3. OnResistance versus Drain Current and Temperature
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 - 50 - 25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 175 VGS = 10 V ID = 6 A I DSS , LEAKAGE (nA)
1000
VGS = 0 V
TJ = 125°C 100 100°C
10
0
10 30 40 20 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
60
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
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