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Part: MTD2N50ET4
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: Obsolete, no on Replacement Part Available, Package: Dpak, Pins=3
Company: ON Semiconductor
Datasheet: Download MTD2N50ET4 datasheet File size : 32 kB
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Datasheet text preview:
MTD2N50E
Preferred Device
Power MOSFET 2 Amps, 500 Volts
NChannel DPAK
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition this advanced high voltage MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Robust High Voltage Termination · Avalanche Energy Specified · SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature · Replaces MTD2N50
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage Continuous NonRepetitive (tp 10 ms) Drain Current Continuous Drain Current Continuous @ 100°C Drain Current Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 75 Vdc, VGS = 10 Vdc, IL = 2.0 Apk, L = 50 mH, RG = 25 ) Thermal Resistance Junction to Case Junction to Ambient Junction to Ambient, when mounted to minimum recommended pad size Maximum Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 500 500 ± 20 ± 40 2.0 1.5 6.0 40 0.32 1.75 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts 12 3 Y WW T 4 CASE 369A DPAK STYLE 2 = Year = Work Week = MOSFET
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2 AMPERES 500 VOLTS RDS(on) = 3.6
NChannel D
G S
MARKING DIAGRAM
YWW T 2N50E
PIN ASSIGNMENT
4 Drain
TJ, Tstg EAS
55 to 150 100
°C mJ
1 Gate
2 Drain
3 Source
ORDERING INFORMATION
Device RJC RJA RJA 3.13 100 71.4 °C/W MTD2N50E MTD2N50E1 MTD2N50ET4 TL 260 °C
Preferred devices are recommended choices for future use and best overall value.
Package DPAK DPAK DPAK
Shipping 75 Units/Rail 75 Units/Rail 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 Rev. 2
Publication Order Number: MTD2N50E/D
MTD2N50E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 1.0 Adc) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 2.0 Adc) (ID = 1.0 Adc, TJ = 125°C) Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) 10 Vdc) (VDD = 250 Vdc, ID = 2.0 Adc, VGS = 10 Vdc, 10 Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (Note 1.) (IS = 2.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr (IS = 2.0 Adc, VGS = 0 Vdc, 2 0 Adc Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. LD LS 4.5 7.5 nH nH ta tb Q RR 0.8 0.69 334 62 272 0.99 1.6 µC ns Vdc 8.0 6.0 16 10 11 2.0 5.4 5.1 20 20 30 20 15 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 323 45 9.0 450 63 20 pF VGS(th) 2.0 RDS(on) VDS(on) gFS 1.2 6.0 1.6 8.64 6.48 mhos 6.0 2.7 4.0 3.6 Vdc mV/°C Ohm Vdc V(BR)DSS 500 IDSS IGSS 0.1 1.0 100 nAdc 562 Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Fi Figure 14) 14)
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2
MTD2N50E
TYPICAL ELECTRICAL CHARACTERISTICS
4 I D , DRAIN CURRENT (AMPS) 4.0 TJ = 25°C VGS = 10 V I D , DRAIN CURRENT (AMPS) 6V 3 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 12 14 16 18 20 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
VDS 10 V TJ = -55°C 100°C 25°C
2 5V
1
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 8 7 6 5 4 3 2 1 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 ID, DRAIN CURRENT (AMPS) 3.2 3.6 4.0 -55°C 25°C 4.2
Figure 2. Transfer Characteristics
VGS = 10 V TJ = 100°C
TJ = 25°C
3.8
3.4 VGS = 10 V 3.0 15 V
2.6
0
0.4
0.8
1.2 1.6 2.0 2.4 2.8 ID, DRAIN CURRENT (AMPS)
3.2
3.6
4.0
Figure 3. OnResistance versus Drain Current and Temperature
2.0 VGS = 10 V ID = 1 A I DSS , LEAKAGE (nA) 1.6 100 1000
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
VGS = 0 V TJ = 125°C 100°C 25°C
1.2
10
0.8
0.4 -50
-25
0
25
50
75
100
125
150
1
0
50
100
150
200
250
300
350
400
450
500
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
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3
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