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Part: MTD3055V1
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: Replace With NTD3055-094 or NTD3055-150, Package: Dpak, Pins=3
Company: ON Semiconductor
Datasheet: Download MTD3055V1 datasheet File size : 389 kB
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Datasheet text preview:
MTD3055V
Preferred Device
Power MOSFET 12 Amps, 60 Volts
NChannel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Avalanche Energy Specified · IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage Continuous Nonrepetitive (tp 10 ms) Drain Current Continuous @ 25°C Drain Current Continuous @ 100°C Drain Current Single Pulse (tp 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 ) Thermal Resistance Junction to Case Junction to Ambient Junction to Ambient, when mounted to minimum recommended pad size Maximum Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 60 60 ± 20 ± 25 12 7.3 37 48 0.32 1.75 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts 4 12 3 Y WW T CASE 369A DPAK STYLE 2 = Year = Work Week = MOSFET YWW T 3055V G S
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12 AMPERES 60 VOLTS RDS(on) = 150 m
NChannel D
MARKING DIAGRAM
TJ, Tstg EAS
55 to 175 72
°C mJ
PIN ASSIGNMENT
°C/W RJC RJA RJA TL 3.13 100 71.4 260 °C 4 Drain
1 Gate
2 Drain
3 Source
ORDERING INFORMATION
Device MTD3055V MTD3055V1 MTD3055VT4 Package DPAK DPAK DPAK Shipping 75 Units/Rail 75 Units/Rail 2500 Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 Rev. 3
Publication Order Number: MTD3055V/D
MTD3055V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 6.0 Adc) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 12 Adc) (ID = 6.0 Adc, TJ = 150°C) Forward Transconductance (VDS = 7.0 Vdc, ID = 6.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Fi Figure 8) 8) (VDS = 48 Vdc, ID = 12 Adc, VGS = 10 Vdc) (VDD = 30 Vdc, ID = 12 Adc, VGS = 10 Vdc, 10 Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (Note 1.) (IS = 12 Adc, VGS = 0 Vdc) (IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C) VSD trr (IS = 12 Adc, VGS = 0 Vdc, 12 Adc Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. LD LS 4.5 7.5 nH nH ta tb Q RR 1.0 0.91 56 40 16 0.128 1.6 µC ns Vdc 7.0 34 17 18 12.2 3.2 5.2 5.5 10 60 30 50 17 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 410 130 25 500 180 50 pF VGS(th) 2.0 RDS(on) VDS(on) gFS 4.0 1.3 5.0 2.2 1.9 mhos 2.7 5.4 0.10 4.0 0.15 Vdc mV/°C Ohm Vdc V(BR)DSS 60 IDSS IGSS 10 100 100 nAdc 65 Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Fi Figure 15) 15)
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2
MTD3055V
TYPICAL ELECTRICAL CHARACTERISTICS
24 I D , DRAIN CURRENT (AMPS) 20 16 12 8 4 0 5V 4V 0 1 2 3 4 5 6V 24 I D , DRAIN CURRENT (AMPS) 20 16 12 8 4 0
TJ = 25°C
VGS = 10 V 9V
8V
VDS 10 V
TJ = - 55°C 25°C 100°C
7V
2
3
4
5
6
7
8
9
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.3 0.25 0.2 0.15
VGS = 10 V
0.15 0.14 0.13 0.12 0.11 0.1 0.09 0.08 0
TJ = 25°C
TJ = 100°C 25°C
VGS = 10 V
0.1 0.05 0 -55°C
15 V
0
4
8 12 16 ID, DRAIN CURRENT (AMPS)
20
24
4
8 16 12 ID, DRAIN CURRENT (AMPS)
20
24
Figure 3. OnResistance versus Drain Current and Temperature
1.6 1.4 1.2 1.0 0.8 0.6 - 50 1 VGS = 10 V ID = 6 A I DSS , LEAKAGE (nA) 100
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
VGS = 0 V
10 TJ = 125°C
- 25
0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C)
150
175
0
20 30 40 50 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
60
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
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3
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