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Part: MTD3302T4
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: Replace With NTD4302, Package: Dpak, Pins=3
Company: ON Semiconductor
Datasheet: Download MTD3302T4 datasheet File size : 389 kB
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Datasheet text preview:
MTD3302 Advance Information Power MOSFET 18 Amps, 30 Volts
NChannel DPAK
This Power MOSFET is capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. · Characterized Over a Wide Range of Power Ratings · Ultralow RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications · Logic Level Gate Drive Can Be Driven by Logic ICs · Diode Is Characterized for Use In Bridge Circuits · Diode Exhibits High Speed, With Soft Recovery · IDSS Specified at Elevated Temperature · Avalanche Energy Specified
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter DraintoSource Voltage DraintoGate Voltage GatetoSource Voltage GatetoSource Operating Voltage Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 20 mH, IL(pk) = 10 A, VDS = 30 Vdc) Symbol VDSS VDGR VGS VGS TJ, Tstg EAS 1000 1 Gate 2 Drain 3 Source Value 30 30 ±20 ±16 55 to 150 Unit Vdc Vdc Vdc Vdc °C mJ
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18 AMPERES 30 VOLTS RDS(on) = 10 m
NChannel D
G S
MARKING DIAGRAM
4 12 3 Y WW T YWW T 3302
CASE 369A DPAK STYLE 2 = Year = Work Week = MOSFET
PIN ASSIGNMENT
4 Drain
ORDERING INFORMATION
Device MTD3302 MTD3302T4 Package DPAK DPAK Shipping 75 Units/Rail 2500 Tape & Reel
This document contains information on a new product. Specifications and information herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 Rev. 2
Publication Order Number: MTD3302/D
MTD3302
POWER RATINGS (TJ = 25°C unless otherwise specified)
Parameter Drain Current Continuous @ TA = 25°C Drain Current Continuous @ TA = 100°C Drain Current Single Pulse (tp 10 ms) Total Power Dissipation @ TA = 25°C Linear Derating Factor Thermal Resistance JunctiontoCase Continuous Source Current (Diode Conduction) Mounted on heat sink Tcase = 25°C VGS = 10 Vdc Steady State Symbol ID ID IDM PD RJC IS Value 30 30 90 96 769 1.3 30 Unit Adc Adc Adc Watts mW/°C °C/W Adc
Parameter Drain Current Continuous @ TA = 25°C Drain Current Continuous @ TA = 100°C Drain Current Single Pulse (tp 10 ms) Total Power Dissipation @ TA = 25°C Linear Derating Factor Thermal Resistance JunctiontoAmbient Continuous Source Current (Diode Conduction) Mounted on 1 inch square FR4 or G10 board VGS = 10 Vdc t 10 seconds
Symbol ID ID IDM PD RJA IS
Value 18.3 11.2 60 5.0 40 25 6.4
Unit Adc Adc Adc Watts mW/°C °C/W Adc
Parameter Drain Current Continuous @ TA = 25°C Drain Current Continuous @ TA = 100°C Drain Current Single Pulse (tp 10 ms) Total Power Dissipation @ TA = 25°C Linear Derating Factor Thermal Resistance JunctiontoAmbient Continuous Source Current (Diode Conduction) Mounted on 1 inch square FR4 or G10 board VGS = 10 Vdc Steady State
Symbol ID ID IDM PD RJA IS
Value 11.2 8.6 40 1.9 15 67 2.5
Unit Adc Adc Adc Watts mW/°C °C/W Adc
Parameter Drain Current Continuous @ TA = 25°C Drain Current Continuous @ TA = 100°C Drain Current Single Pulse (tp 10 ms) Total Power Dissipation @ TA = 25°C Linear Derating Factor Thermal Resistance JunctiontoAmbient Continuous Source Current (Diode Conduction) Mounted on minimum recommended FR4 or G10 board VGS = 10 Vdc Steady State
Symbol ID ID IDM PD RJA IS
Value 8.3 5.2 30 1.0 8.3 120 1.4
Unit Adc Adc Adc Watts mW/°C °C/W Adc
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MTD3302
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 10 Adc) (VGS = 4.5 Vdc, ID = 5.0 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (VDS = 15 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) (VDD = 25 Vdc, ID = 1.0 Adc, VGS = 4.5 Vdc, 4 5 Vdc RG = 6.0 ) (VDD = 25 Vdc, ID = 1.0 Adc, VGS = 10 Vdc, 10 Vdc RG = 6.0 ) td(on) tr td(off) tf td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (Note 1.) (IS = 2.3 Adc, VGS = 0 Vdc) (IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 2.3 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperatures. trr ta tb Q RR VSD 0.87 0.72 41 21 20 0.047 1.1 µC ns Vdc 10 30 65 58 20 86 44 48 47 4.8 16.7 11.2 20 60 130 110 40 170 80 90 60 nC ns ns (VDS = 24 Vd VGS = 0 Vdc, 24 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 1760 610 185 pF VGS(th) 1.0 RDS(on) gFS 12 8.9 13 19 10 16 Mhos 1.9 4.6 Vdc mV/°C m V(BR)DSS 30 IDSS IGSS 0.005 0.5 2 1.0 10 ±100 nAdc 33 23 Vdc mV/°C µAdc Symbol Min Typ Max Unit
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