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Details, datasheet, quote on part number: MTP75N05HD
 
 
Part numberMTP75N05HD
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionReplace With NTP75N06, Package: TO-220, Pins=3
CompanyON Semiconductor
DatasheetDownload MTP75N05HD datasheet
Request For QuoteFind where to buy MTP75N05HD
 


 
Specifications, Features, Applications

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy­efficient design also offers a drain­to­source diode with a fast recovery time. Designed for low­voltage, high­speed switching applications in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.· SPICE Parameters Available· Diode is Characterized for Use in Bridge Circuits· Diode Exhibits High Speed, Yet Soft Recovery· IDSS and VDS(on) Specified at Elevated Temperature· Avalanche Energy Specified

Rating Drain­Source Voltage Drain­Gate Voltage (RGS 1.0 M) Gate­Source Voltage ­ Continuous Drain Current ­ Continuous Drain Current ­ Continuous @ 100°C Drain Current ­ Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain­to­Source Avalanche Energy ­ Starting = 25°C (VDD = 25 Vdc, VGS = 10 Vpk, = 75 Apk, = 0.177 mH, 25 ) Thermal Resistance ­ Junction to Case ­ Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS ID IDM PD TJ, Tstg EAS Value 175 500 Unit Vdc Adc Apk Watts W/°C 2 TO­220AB CASE 221A STYLE 5 4

= Device Code = Location Code = Year = Work Week
Preferred devices are recommended choices for future use and best overall value.

Characteristic OFF CHARACTERISTICS Drain­Source Breakdown Voltage (VGS = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 50 Vdc, VGS = 0) (VDS = 50 Vdc, VGS = 150°C) Gate­Body Leakage Current (VGS ± 20 Vdc, VDS 0) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, = 250 µAdc) Temperature Coefficient (Negative) Static Drain­Source On­Resistance (VGS = 10 Vdc, = 37.5 Adc) Drain­Source On­Voltage (VGS = 10 Vdc) (ID = 75 Adc) (ID = 37.5 Adc, = 150°C) Forward Transconductance (VDS = 10 Vdc, = 20 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Gate Charge (VDS = 40 Vdc, = 75 Adc, VGS = 10 Vdc) (VDD = 25 Vdc, = 75 Adc, VGS = 10 Vdc, Vdc 9.1 ) td(on) tr td(off) Q2 Q3 SOURCE­DRAIN DIODE CHARACTERISTICS Forward On­Voltage (IS = 75 Adc, VGS = 0) (IS = 75 Adc, VGS = 150°C) (Cpk 10)(2) VSD ­ trr (IS = 37.5 Adc, VGS = 0, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. 3. Reflects typical values. Max limit ­ Typ Cpk 3 x SIGMA ta tb QRR µC ns Vdc nC ns (VDS = 25 Vdc, VGS = 1.0 MHz) ) (Cpk 2 0)(2) Ciss Coss Crss pF (Cpk 1.5) (Note 3.) VGS(th) 2.0 ­ (Cpk 3.0) (Note 3.) RDS(on) ­ VDS(on) ­ gFS mhos 7.0 9.5 Vdc mV/°C mW (Cpk 2.0) (Note 3.) V(BR)DSS 50 ­ IDSS ­ IGSS nAdc Vdc mV/°C µAdc Symbol Min Typ Max Unit

Figure 3. On­Resistance versus Drain Current and Temperature
Figure 4. On­Resistance versus Drain Current and Gate Voltage

4. Pulse Tests: Pulse Width 250 µs, Duty Cycle 2%.
Figure 6. Drain­To­Source Leakage Current versus Voltage



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