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Part: MTV10N100E
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> N-Channel
Description: Tmos Power Fet 10a 1000v: 1000v, 10a
Company: ON Semiconductor
Datasheet: Download MTV10N100E datasheet File size : 119 kB
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTV10N100E/D
TM Data Sheet TMOS E-FET.TM Power Field Effect Transistor D3PAK for Surface Mount
Designer's
MTV10N100E
NChannel EnhancementMode Silicon Gate
The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drainto source diode with a fast recovery time. Designed for high voltage, high speed switching applications in surface mount PWM motor controls and both acdc and dcdc power supplies. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
®
D NChannel
G CASE 43301, Style 2 D3PAK Surface Mount
· Robust High Voltage Termination S · Avalanche Energy Specified · SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature · Short Heatsink Tab Manufactured Not Sheared · Specifically Designed Leadframe for Maximum Power Dissipation · Available in 24 mm, 13inch/500 Unit Tape & Reel, Add RL Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GatetoSource Voltage -- Continuous Drain Current -- Continuous Drain Current -- Continuous @ 100°C Drain Current -- Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C (1) Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy -- Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 10 Apk, L = 10 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient (1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds (1) When surface mounted to an FR4 board using the minimum recommended pad size. Symbol VDSS VDGR VGS ID ID IDM PD
Value 1000 1000 ±20 10 6.2 30 250 2.0 3.57 55 to 150 500
Unit Vdc Vdc Vdc Adc Apk Watts W/°C Watts °C mJ
TJ, Tstg EAS RJC RJA RJA TL
0.5 62.5 35 260
°C/W
°C
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
© Motorola TMOS Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1
MTV10N100E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 1000 Vdc, VGS = 0 Vdc) (VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 5.0 Adc) DraintoSource OnVoltage (VGS = 10 Vdc, ID = 10 Adc) (VGS = 10 Vdc, ID = 5.0 Adc, TJ = 125°C) Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 10 Adc, VGS = 10 Vdc) (VDD = 500 Vdc, ID = 10 Adc, VGS = 10 Vdc, RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 10 Adc, VGS = 0 Vdc) (IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C) VSD -- -- trr (IS = 10 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. LD -- LS -- 13 -- 4.5 -- nH nH ta tb Q RR -- -- -- -- 0.885 0.8 885 220 667 8.0 1.1 -- -- -- -- -- µC ns Vdc -- -- -- -- -- -- -- -- 29 57 118 70 100 18.4 33 36.7 60 120 240 140 120 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss -- -- -- 3500 264 52 5600 530 90 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 8.0 11 -- 10 15 15.3 -- mhos -- 3.0 7.0 1.07 4.0 -- 1.3 Vdc mV/°C Ohm Vdc V(BR)DSS 1000 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- 1254 -- -- Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time
2
Motorola TMOS Power MOSFET Transistor Device Data
MTV10N100E
TYPICAL ELECTRICAL CHARACTERISTICS
16 I D , DRAIN CURRENT (AMPS) 20 TJ = 25°C VGS = 10 V I D , DRAIN CURRENT (AMPS) 6V 12 5V 8 16 VDS 10 V
12
8 100°C 4 25°C TJ = 55°C
4 4V 0 0 4 8 12 16 20
0 2.8
3.2
3.6
4
4.4
4.8
5.2
5.6
6
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
2.4 2 1.6 1.2 0.8
VGS = 10 V TJ = 100°C
1.48 TJ = 25°C 1.4 1.32 1.24 1.16 1.08 1.0 VGS = 10 V 15 V
25°C
55°C 0.4 0
0
4
8
12
16
20
0
4
8
12
16
20
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAINTOSOURCE RESISTANCE (NORMALIZED)
2.8 2.4 2 1.6 1.2 0.8 0.4 0 50 VGS = 10 V ID = 5 A
100000 VGS = 0 V 10000 I DSS , LEAKAGE (nA) 100°C TJ = 125°C
1000
100 25°C
10
25
0
25
50
75
100
125
150
1
0
100 200
300
400
500
600
700
800
900 1000
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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