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Details, datasheet, quote on part number:MTW7N80E
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| Part: | MTW7N80E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | Tmos Power Fet, To-220ab, N-channel: 800v, 7a |
| Company: | ON Semiconductor |
| Datasheet: | Download MTW7N80E datasheet File size : 110 kB |
| Request For quote: | Find where to buy MTW7N80E
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Datasheet text preview:
MTW7N80E
Preferred Device
Power MOSFET 7 Amps, 800 Volts
NChannel TO247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Robust High Voltage Termination · Avalanche Energy Specified · SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature · Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage Continuous NonRepetitive (tp 10 ms) Drain Current Continuous Drain Current Continuous @ 100°C Drain Current Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD =100 Vdc, VGS = 10 Vdc, IL = 21 Apk, L = 3.0 mH, RG = 25 ) Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS Value 800 800 ± 20 ± 40 7.0 5.1 21 180 1.43 55 to 150 661 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ LL Y WW 1 Gate 2 Drain = Location Code = Year = Work Week 3 Source MTW7N80E LLYWW 1
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7 AMPERES 800 VOLTS RDS(on) = 1.0
NChannel D
G S 4 TO247AE CASE 340K Style 1 2 3
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
RJC RJA TL
0.70 62.5 260
°C/W °C
ORDERING INFORMATION
Device MTW7N80E Package TO247 Shipping 30 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 Rev. 4
Publication Order Number: MTW7N80E/D
MTW7N80E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 800 Vdc, VGS = 0 Vdc) (VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 3.5 Adc) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 7.0 Adc) (ID = 3.5 Adc, TJ = 125°C) Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 7.0 Adc, VGS = 10 Vdc) 10 Vdc) (VDD = 400 Vdc, ID = 7.0 Adc, VGS = 10 Vdc, 10 Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (Note 1.) (IS = 7.0 Adc, VGS = 0 Vdc) (IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr (IS = 7.0 Adc, VGS = 0 Vdc, 7 0 Adc Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. LD LS 4.5 13 nH nH ta tb Q RR 0.817 0.7 651 164 487 4.78 1.14 µC ns Vdc 20 37 84 49 70 13 28 23 40 85 165 105 105 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 3000 244 46 4160 490 90 pF VGS(th) 2.0 RDS(on) VDS(on) gFS 4.0 6.8 7.63 10 10.5 mhos 3.0 7.0 0.87 4.0 1.0 Vdc mV/°C Ohm Vdc V(BR)DSS 800 IDSS IGSS 10 100 100 nAdc 1,030 Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Fi Figure 14) 14)
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MTW7N80E
TYPICAL ELECTRICAL CHARACTERISTICS
14 12 I D , DRAIN CURRENT (AMPS) 10 8 6 4 2 0 0 2 4 5V 6 8 10 12 14 16 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 18 20 14 VGS = 10 V 7V 6V 12 I D , DRAIN CURRENT (AMPS) 10 8 6 4 2 0 2.0 2.4 TJ = -55°C 2.8 3.2 3.6 4.0 4.4 4.8 5.2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5.6 25°C
TJ = 25°C
VDS 10 V 100°C
Figure 1. OnRegion Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 2 4 -55°C 6 8 10 ID, DRAIN CURRENT (AMPS) 12 14 25°C VGS = 10 V TJ = 100°C
1.08 1.04 1.00 0.96 0.92 0.88 0.84 0.80 0
TJ = 25°C
VGS = 10 V 15 V
2
4 6 10 8 ID, DRAIN CURRENT (AMPS)
12
14
Figure 3. OnResistance versus Drain Current and Temperature
100000 VGS = 10 V ID = 3.5 A
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
2.4 2.0 1.6 1.2 0.8 0.4 0 -50
VGS = 0 V 10000 I DSS , LEAKAGE (nA) 1000 100
TJ = 125°C 100°C
25°C 10 1
-25
0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C)
125
150
0
100
400 600 200 300 500 700 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
800
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
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