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Details, datasheet, quote on part number:MTW8N60E
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| Part: | MTW8N60E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | Tmos Power Fet, To-220ab, N-channel: 600v, 8a |
| Company: | ON Semiconductor |
| Datasheet: | Download MTW8N60E datasheet File size : 113 kB |
| Request For quote: | Find where to buy MTW8N60E
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Datasheet text preview:
MTW8N60E
Preferred Device
Power MOSFET 8 Amps, 600 Volts
NChannel TO247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Robust High Voltage Termination · Avalanche Energy Specified · SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature · Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage Continuous NonRepetitive (tp 10 ms) Drain Current Continuous Drain Current Continuous @ 100°C Drain Current Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 24 Apk, L = 3.0 mH, RG = 25 ) Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS Value 600 600 ± 20 ± 40 8.0 6.4 24 180 1.43 55 to 150 864 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ LL Y WW 1 Gate 2 Drain = Location Code = Year = Work Week 3 Source MTW8N60E LLYWW 1
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8 AMPERES 600 VOLTS RDS(on) = 550 m
NChannel D
G S 4 TO247AE CASE 340K Style 1 2 3
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
RJC RJA TL
0.70 40 260
°C/W °C
ORDERING INFORMATION
Device MTW8N60E Package TO247 Shipping 30 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
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November, 2000 Rev. 5
Publication Order Number: MTW8N60E/D
MTW8N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 600 Vdc, VGS = 0 Vdc) (VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 4.0 Adc) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 8.0 Adc) (ID = 4.0 Adc, TJ = 125°C) Forward Transconductance (VDS = 15 Vdc, ID = 4.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 300 Vdc, ID = 8.0 Adc, VGS = 10 Vdc) 10 Vdc) (VDD = 300 Vdc, ID = 8.0 Adc, VGS = 10 Vdc, 10 Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (Note 1.) (IS = 8.0 Adc, VGS = 0 Vdc) (IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr (IS = 8.0 Adc, VGS = 0 Vdc, 8 0 Adc Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. LD LS 4.5 13 nH nH ta tb Q RR 0.829 0.71 381 225 156 4.61 1.1 µC ns Vdc 23.6 37.6 80 48 67 17 26 27 50 70 170 95 100 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 2480 247 56 3470 346 120 pF VGS(th) 2.0 RDS(on) VDS(on) gFS 4.0 3.2 8.5 4.8 4.6 mhos 3.0 7.0 0.46 4.0 0.55 Vdc mV/°C Ohm Vdc V(BR)DSS 600 IDSS IGSS 10 100 100 nAdc 695 Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Fi Figure 14) 14)
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MTW8N60E
TYPICAL ELECTRICAL CHARACTERISTICS
16 14 I D , DRAIN CURRENT (AMPS) 12 10 8 6 4 2 0 0 1 4 6 8 3 5 7 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 4V 9 10 5V 16 TJ = 25°C VGS = 10 V 6V 14 I D , DRAIN CURRENT (AMPS) 12 10 8 6 4 2 0 2.0 2.4 TJ = -55°C 2.8 3.2 3.6 4.0 4.4 4.8 5.2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5.6 6.0 25°C VDS 10 V 100°C
Figure 1. OnRegion Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.86 0.76 0.66 0.56 0.46 0.36 0.26 0.16 2 4 -55°C 6 10 8 12 ID, DRAIN CURRENT (AMPS) 14 16 25°C RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.46 0.45 0.44 0.43 0.42 0.41 0.40 0.39 0.38 1 2 3
Figure 2. Transfer Characteristics
VGS = 10 V
TJ = 100°C
TJ = 25°C
VGS = 10 V 15 V
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5
6 7 8 9 10 11 12 13 14 15 16 ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
2.8 2.4 2.0 1.6 1.2 0.8 0.4 -50 VGS = 10 V ID = 4 A
10000 1000 I DSS , LEAKAGE (nA) 100 10 1.0
TJ = 125°C 100°C
25°C
VGS = 0 V -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) 125 150 0.1 0 200 400 100 300 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 600
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
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