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Details, datasheet, quote on part number:MTY14N100E
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| Part: | MTY14N100E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | N-channel Enhancement-mode Silicon Gate |
| Company: | ON Semiconductor |
| Datasheet: | Download MTY14N100E datasheet File size : 238 kB |
| Request For quote: | Find where to buy MTY14N100E
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY14N100E/D
TM Data Sheet TMOS E-FET.TM Power Field Effect Transistor
Designer's
MTY14N100E
Motorola Preferred Device
NChannel EnhancementMode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy eff ic ient design also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. · Avalanche Energy Specified · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature
G S D
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
®
CASE 340G02, STYLE 1 TO264
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GatetoSource Voltage -- Continuous -- Single Pulse (tp 50 µs) Drain Current -- Continuous -- Continuous @ TC = 100°C -- Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy -- Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 14 Apk, L = 10 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RJC RJA TL Value 1000 1000 ± 20 ± 40 14 8.7 49 300 2.4 55 to 150 980 0.42 30 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ °C/W °C
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
©Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996
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MTY14N100E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0, ID = 0.250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 1000 Vdc, VGS = 0 Vdc) (VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 0.250 mAdc) Threshold Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 7.0 Adc) DraintoSource OnVoltage (VGS = 10 Vdc, ID = 14 Adc) (VGS = 10 Vdc, ID = 7.0 Adc, TJ = 125°C) Forward Transconductance (VDS 15 Vdc, ID = 7.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 500 Vdc, ID = 14 Adc, VGS = 10 Vdc) (VDD = 500 Vdc, ID = 14 Adc, VGS = 10 Vdc, RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 14 Adc, VGS = 0 Vdc) (IS = 14 Adc, VGS = 0 Vdc, TJ = 125°C) VSD -- -- trr (IS = 14 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. LD -- LS -- 13 -- 4.5 -- nH nH ta tb Q RR -- -- -- -- 1.36 1.26 831 364 467 15.3 1.5 -- -- -- -- -- µC ns Vdc -- -- -- -- -- -- -- -- 49 98 132 83 142 34 46 56 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss -- -- -- 7230 462 61 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 10 12.3 -- 12 13.4 11.8 -- mhos -- 3.3 9.0 0.67 4.0 -- 0.8 Vdc mV/°C Ohm Vdc V(BR)DSS 1000 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- 1.0 -- -- Vdc V/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Figure 14)
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Motorola TMOS Power MOSFET Transistor Device Data
MTY14N100E
TYPICAL ELECTRICAL CHARACTERISTICS
20 18 I D , DRAIN CURRENT (AMPS) 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 0 2 3 4 5 6 5V 8V TJ = 25°C VGS = 10 V 6V I D , DRAIN CURRENT (AMPS) 25 20 15 100°C 10 5 30 VDS 10 V TJ = 55°C
25°C
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
1.6 VGS = 10 V 1.2 TJ = 100°C
0.85 TJ = 25°C 0.8
0.75 VGS = 10 V 0.7 15 V 0.65 0.6
0.8
25°C
0.4
55°C
0
0
4
8
12
16
20
24
28
0
4
8
12
16
20
24
28
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAINTOSOURCE RESISTANCE (NORMALIZED)
2.5
VGS = 10 V ID = 7 A
100000 VGS = 0 V 10000 I DSS , LEAKAGE (nA) TJ = 125°C 100°C
2.0
1.5
1000
1.0
100
25°C
0.5
10
0 50
25
0
25
50
75
100
125
150
1
0
100
200
300
400
500
600
700
800
900 1000
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
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