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Details, datasheet, quote on part number:MTY16N80E
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| Part: | MTY16N80E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | N-channel Enhancement-mode Silicon Gate |
| Company: | ON Semiconductor |
| Datasheet: | Download MTY16N80E datasheet File size : 245 kB |
| Request For quote: | Find where to buy MTY16N80E
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY16N80E/D
TM Data Sheet TMOS E-FET.TM Power Field Effect Transistor
Designer's
MTY16N80E
Motorola Preferred Device
NChannel EnhancementMode Silicon Gate
T h i s high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and c o m m u t a t i o n modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · · · · Robust High Voltage Termination Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
D
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
®
G S CASE 340G02, STYLE 1 TO264
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GatetoSource Voltage -- Continuous -- NonRepetitive (tp 10 ms) Drain Current -- Continuous -- Continuous @ TC = 100°C -- Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy -- Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 16 Apk, L = 10 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS 1280 RJC RJA TL 0.42 30 260 °C/W °C Value 800 800 ± 20 ± 40 16 11 55 300 2.4 55 to 150 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
©Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995
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MTY16N80E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 800 Vdc, VGS = 0 Vdc) (VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 8.0 Adc) DraintoSource OnVoltage (VGS = 10 Vdc, ID = 16 Adc) (VGS = 10 Vdc, ID = 8.0 Adc, TJ = 125°C) Forward Transconductance (VDS 15 Vdc, ID = 8.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 16 Adc, VGS = 10 Vdc) (VDD = 400 Vdc, ID = 16 Adc, VGS = 10 Vdc, RG = 4.7 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 16 Adc, VGS = 0 Vdc) (IS = 16 Adc, VGS = 0 Vdc, TJ = 125°C) VSD -- -- trr (IS = 16 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. LD -- LS -- 13 -- 4.5 -- nH nH ta tb Q RR -- -- -- -- 0.9 0.79 995 428 567 20 1.2 -- -- -- -- -- µC ns Vdc -- -- -- -- -- -- -- -- 52 112 122 100 146 39 48 53 100 200 240 200 200 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss -- -- -- 7220 508 65 10110 710 130 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 10 7.3 -- 15 9.4 8.4 -- mhos -- 3.0 9.0 0.42 4.0 -- 0.5 Vdc mV/°C Ohm Vdc V(BR)DSS 800 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- 570 -- -- Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Figure 14)
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Motorola TMOS Power MOSFET Transistor Device Data
MTY16N80E
TYPICAL ELECTRICAL CHARACTERISTICS
32 TJ = 25°C I D , DRAIN CURRENT (AMPS) 24 VGS = 10 V 8V 16 6V I D , DRAIN CURRENT (AMPS) 12 VDS 10 V
100°C
16 5V 8 4V 0 0 2 4 6 8 10 12 14 16 18 20
8 25°C 4 TJ = 55°C 0 2 3 4 5 6
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.9 VGS = 10 V TJ = 100°C 0.6
0.6 TJ = 25°C
25°C 0.3 55°C 0
0.5 VGS = 10 V
15 V 0.4
0
8
16 ID, DRAIN CURRENT (AMPS)
24
32
4
8
12
16
20
24
28
32
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAINTOSOURCE RESISTANCE (NORMALIZED)
2.5
VGS = 10 V ID = 8 A
100000 VGS = 0 V 10000 I DSS , LEAKAGE (nA) TJ = 125°C 100°C
2.0
1.5
1000
1.0
100 25°C 10
0.5
0 50
25
0
25
50
75
100
125
150
1
0
100
200
300
400
500
600
700
800
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
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