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Details, datasheet, quote on part number:MTY20N50E
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| Part: | MTY20N50E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | 20 Amp To-264 High Power Product, N-channel, VDSS 500 |
| Company: | ON Semiconductor |
| Datasheet: | Download MTY20N50E datasheet File size : 91 kB |
| Request For quote: | Find where to buy MTY20N50E
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Datasheet text preview:
MTY20N50E
Preferred Device
Power MOSFET 20 Amps, 500 Volts
NChannel TO264
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Robust High Voltage Termination · Avalanche Energy Specified · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GateSource Voltage Continuous NonRepetitive (tp 10 ms) Drain Current Continuous Drain Current Continuous @ 100°C Drain Current Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 10 mH, RG = 25 ) Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS 2000 1 Gate 2 Drain LL Y WW = Location Code = Year = Work Week 3 Source Value 500 500 ± 20 ± 40 20 13.9 60 250 2.0 55 to 150 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ MTY20N50E LLYWW TO264 CASE 340G Style 1 1 2 3
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20 AMPERES 500 VOLTS RDS(on) = 260 m
NChannel D
G S
MARKING DIAGRAM & PIN ASSIGNMENT
RJC RJA TL
0.50 40 260
°C/W °C
ORDERING INFORMATION
Device MTY20N50E Package TO264 Shipping 25 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 Rev. 1
Publication Order Number: MTY20N50E/D
MTY20N50E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 10 Adc) DraintoSource OnVoltage (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 10 Adc, TJ = 125°C) Forward Transconductance (VDS = 13 Vdc, ID = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 20 Adc, VGS = 10 Vdc) 10 Vdc) (VDD = 250 Vdc, ID = 20 Adc, VGS = 10 Vdc, 10 Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (Note 1.) (IS = 20 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr (IS = 20 Adc, VGS = 0 Vdc, 20 Adc Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. LD LS 7.5 3.5 4.5 nH nH ta tb Q RR 0.92 0.81 431 272 159 6.67 1.1 µC ns Vdc 29 90 97 84 100 20 44 36 60 170 190 170 140 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 3880 452 96 6980 920 140 pF VGS(th) 2.0 RDS(on) VDS(on) gFS 11 4.75 16.2 6.2 6.5 mhos 3.0 7.0 0.22 4.0 0.26 Vdc mV/°C Ohm Vdc V(BR)DSS 500 IDSS IGSS 10 100 100 nAdc 583 Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Fi Figure 14) 14)
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MTY20N50E
TYPICAL ELECTRICAL CHARACTERISTICS
40 I D , DRAIN CURRENT (AMPS) 32 7V 24 16 8 0 5V 40 9V 6V I D , DRAIN CURRENT (AMPS) 8V 32 24 16 8 0 2.0 2.4 100°C 25°C TJ = -55°C 0 2 4 6 8 10 12 14 16 18 20 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6.4 6.8 VDS 10 V
TJ = 25°C
VGS = 10 V
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.6 VGS = 10 V 0.5 0.4 0.3 0.2 0.1 0 -55°C 25°C TJ = 100°C
0.34 TJ = 25°C 0.32 0.30 0.28 0.26 0.24 VGS = 10 V
15 V
0
4
8
16 24 12 20 28 ID, DRAIN CURRENT (AMPS)
32
36
40
0
4
8
16 24 12 20 28 ID, DRAIN CURRENT (AMPS)
32
36
40
Figure 3. OnResistance versus Drain Current and Temperature
2.4 2.0 1.6 1.2 0.8 0.4 0 - 50 1 10000
Figure 4. OnResistance versus Drain Current and Gate Voltage
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
VGS = 10 V ID = 10 A
VGS = 0 V
TJ = 125°C 100°C
I DSS , LEAKAGE (nA)
1000
100
10
25°C
- 25
0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C)
125
150
0
50
100 150 200 250 300 350 400 450 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
500
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
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