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Details, datasheet, quote on part number:MTY25N60E
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| Part: | MTY25N60E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Obsolete, no on Replacement Part Available, Package: TO-3PBL (TO-264), Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download MTY25N60E datasheet File size : 104 kB |
| Request For quote: | Find where to buy MTY25N60E
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Datasheet text preview:
MTY25N60E
Preferred Device
Power MOSFET 25 Amps, 600 Volts
NChannel TO264
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Robust High Voltage Termination · Avalanche Energy Specified · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DrainSource Voltage DrainGate Voltage (RGS = 1 M) GateSource Voltage Continuous NonRepetitive (tp 10 ms) Drain Current Continuous @ TC = 25°C Drain Current Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 25 Apk, L = 10 mH, RG = 25 ) Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg EAS Value 600 600 ±20 ±40 25 65 300 2.38 55 to 150 3000 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ MTY25N60E LLYWW TO264 CASE 340G Style 1 1 2 3
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25 AMPERES 600 VOLTS RDS(on) = 210 m
NChannel D
G S
MARKING DIAGRAM & PIN ASSIGNMENT
RJC RJA TL
0.42 40 260
°C/W °C
1 Gate 2 Drain LL Y WW
3 Source
= Location Code = Year = Work Week
ORDERING INFORMATION
Device MTY25N60E Package TO264 Shipping 25 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 Rev. 3
Publication Order Number: MTY25N60E/D
MTY25N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0, ID = 250 µA) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 600 Vdc, VGS = 0 Vdc) (VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 12.5 Adc) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 25 Adc) (ID = 12.5 Adc, TJ = 125°C) Forward Transconductance (VDS = 15 Vdc, ID = 12.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Fi Figure 8) 8) (VDS = 480 Vdc, ID = 25 Adc, VGS = 10 Vdc) (VDD = 300 Vdc, ID = 25 Adc, VGS = 10 Vdc, 10 Vdc RG = 4.7 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 25 Adc, VGS = 0 Vdc) (IS = 25 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr (IS = 25 Adc, VGS = 0 Vdc, 25 Adc Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. LD LS 4.5 7.5 nH nH ta tb Q RR 0.9 0.8 620 310 310 10.42 1.2 µC ns Vdc 32 90 170 110 240 30 110 65 60 175 300 200 350 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 7300 700 110 10220 1100 250 pF VGS(th) 2 RDS(on) VDS(on) gFS 18 5.2 6 7 mhos 7 4 0.21 Vdc mV/°C Ohm Vdc V(BR)DSS 600 IDSS IGSS 10 200 100 nAdc 714 Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Fi Figure 14) 14)
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MTY25N60E
TYPICAL ELECTRICAL CHARACTERISTICS
50 TJ = 25°C I D , DRAIN CURRENT (AMPS) 40 30 20 10 4V 0 0 2 4 6 8 10 12 14 16 18 20 0 2 2.5 3 3.5 4 4.5 VGS = 10 V 50 VDS 10 V I D , DRAIN CURRENT (AMPS) 40 30 20 10
6V 8V 5V
100°C TJ = -55°C 25°C 5 5.5 6
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.5 VGS = 10 V 0.4 0.3 25°C 0.2 0.1 0 -55°C TJ = 100°C 0.26
Figure 2. Transfer Characteristics
TJ = 25°C 0.24
0.22
VGS = 10 V 15 V
0.2
0
10
20
30
40
50
0.18
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
2.5 2 1.5 1 0.5 0 -50 VGS = 10 V ID = 12.5 A 10000
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
TJ = 125°C 1000 I DSS , LEAKAGE (nA) 100°C
100 VGS = 0 V 10 25°C
-25
0
25
50
75
100
125
150
1
0
100
200
300
400
500
600
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
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