|
Details, datasheet, quote on part number:MTY30N50E
| |
| Part: | MTY30N50E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Power MOSFET 30 Amps, 500 Volts , Package: TO-3PBL (TO-264), Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download MTY30N50E datasheet File size : 107 kB |
| Request For quote: | Find where to buy MTY30N50E
|
| |
Datasheet text preview:
MTY30N50E
Preferred Device
Power MOSFET 30 Amps, 500 Volts
NChannel TO264
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Robust High Voltage Termination · Avalanche Energy Specified · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DrainSource Voltage DrainGate Voltage (RGS = 1 M) GateSource Voltage Continuous NonRepetitive (tp 10 ms) Drain Current Continuous @ TC = 25°C Drain Current Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 30 Apk, L = 10 mH, RG = 25 ) Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg EAS Value 500 500 ±20 ±40 30 80 300 2.38 55 to 150 3000 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ MTY30N50E LLYWW TO264 CASE 340G Style 1 1 2 3
http://onsemi.com
30 AMPERES 500 VOLTS RDS(on) = 150 m
NChannel D
G S
MARKING DIAGRAM & PIN ASSIGNMENT
RJC RJA TL
0.42 40 260
°C/W °C
1 Gate 2 Drain LL Y WW
3 Source
= Location Code = Year = Work Week
ORDERING INFORMATION
Device MTY30N50E Package TO264 Shipping 25 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 Rev. 3
Publication Order Number: MTY30N50E/D
MTY30N50E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0, ID = 250 µA) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 15 Adc) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 30 Adc) (ID = 15 Adc, TJ = 125°C) Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Fi Figure 8) 8) (VDS = 400 Vdc, ID = 30 Adc, VGS = 10 Vdc) (VDD = 250 Vdc, ID = 30 Adc, VGS = 10 Vdc, 10 Vdc RG = 4.7 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 30 Adc, VGS = 0 Vdc) (IS = 30 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr (IS = 30 Adc, VGS = 0 Vdc, 30 Adc Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. LD LS 4.5 13 nH nH ta tb Q RR 0.95 0.88 485 312 173 8.2 1.2 µC ns Vdc 32 105 160 115 235 35 110 65 60 175 275 200 350 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1 MHz) Ciss Coss Cr s s 7200 775 120 10080 1200 250 pF VGS(th) 2 RDS(on) VDS(on) gFS 17 4.1 5 7 mhos 7 4 0.15 Vdc mV/°C Ohm Vdc V(BR)DSS 500 IDSS IGSS 10 200 100 nAdc 566 Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Fi Figure 14) 14)
http://onsemi.com
2
MTY30N50E
TYPICAL ELECTRICAL CHARACTERISTICS
60 I D , DRAIN CURRENT (AMPS) 50 40 30 20 10 4V 0 0 2 4 6 8 10 12 0 2 2.5 3 3.5 4 4.5 5 5V TJ = 25°C 60 6V 8V I D , DRAIN CURRENT (AMPS) 50 40 30 20 10 100°C TJ = -55°C 25°C 5.5 6 6.5 7 VDS 10 V
VGS = 10 V
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 10 20 30 40 50 60 25°C VGS = 10 V TJ = 100°C 0.17
Figure 2. Transfer Characteristics
TJ = 25°C 0.16 0.15 VGS = 10 V 0.14 0.13 0.12 15 V
-55°C
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
2.5 2 1.5 1 0.5 0 -50 VGS = 10 V ID = 15 A 10000
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
TJ = 125°C 1000 I DSS , LEAKAGE (nA) 100°C
100
VGS = 0 V 25°C
10
-25
0
25
50
75
100
125
150
1
0
100
200
300
400
500
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
http://onsemi.com
3
|
|
