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Details, datasheet, quote on part number:MTY55N20E
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| Part: | MTY55N20E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Obsolete, See Parametric Search or Selector Guide, Package: TO-3PBL (TO-264), Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download MTY55N20E datasheet File size : 104 kB |
| Request For quote: | Find where to buy MTY55N20E
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Datasheet text preview:
MTY55N20E
Preferred Device
Power MOSFET 55 Amps, 200 Volts
NChannel TO264
This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. · Avalanche Energy Specified · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DrainSource Voltage DrainGate Voltage (RGS = 1 M) GateSource Voltage Continuous NonRepetitive (tp 10 ms) Drain Current Continuous @ TC = 25°C Drain Current Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 110 Apk, L = 0.3 mH, RG = 25 ) Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg EAS Value 200 200 ±20 ±40 55 165 300 2.38 55 to 150 3000 Unit Vdc Vdc Vdc Vpk 1 Adc Apk Watts W/°C °C mJ MTY55N20E LLYWW 2 3 TO264 CASE 340G Style 1
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55 AMPERES 200 VOLTS RDS(on) = 28 m
NChannel D
G S
MARKING DIAGRAM & PIN ASSIGNMENT
RJC RJA TL
0.42 40 260
°C/W °C
1 Gate 2 Drain LL Y WW
3 Source
= Location Code = Year = Work Week
ORDERING INFORMATION
Device MTY55N20E Package TO264 Shipping 25 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 Rev. 3
Publication Order Number: MTY55N20E/D
MTY55N20E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0, ID = 250 µA) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 200 Vdc, VGS = 0 Vdc) (VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 27.5 Adc) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 55 Adc) (ID = 27.5 Adc, TJ = 125°C) Forward Transconductance (VDS = 10 Vdc, ID = 27.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Fi Figure 8) 8) (VDS = 160 Vdc, ID = 55 Adc, VGS = 10 Vdc) (VDD = 100 Vdc, ID = 55 Adc, VGS = 10 Vdc, 10 Vdc RG = 4.7 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 55 Adc, VGS = 0 Vdc) (IS = 55 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr (IS = 55 Adc, VGS = 0 Vdc, 55 Adc Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. LD LS 4.5 13 nH nH ta tb Q RR 0.75 1.1 310 220 90 4.6 1.2 µC ns Vdc 33 200 150 170 245 33 128 79 66 400 300 340 343 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1 MHz) Ciss Coss Cr s s 7200 1800 460 10080 2520 920 pF VGS(th) 2 RDS(on) VDS(on) gFS 30 1.3 37 1.6 1.8 mhos 7 4 0.028 Vdc mV/°C Ohm Vdc V(BR)DSS 200 IDSS IGSS 10 200 100 nAdc 250 Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Fi Figure 14) 14)
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MTY55N20E
TYPICAL ELECTRICAL CHARACTERISTICS
120 I D , DRAIN CURRENT (AMPS) 100 80 6V 60 40 5V 20 0 4V 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ = 25°C 120 7V I D , DRAIN CURRENT (AMPS) 100 80 60 40 20 0 100°C TJ = -55°C 25°C 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VGS = 10 V
8V 9V
VDS 10 V
Figure 1. OnRegion Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.05 VGS = 10 V 0.04 0.03 0.02 -55°C 0.01 0 TJ = 100°C RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.027
Figure 2. Transfer Characteristics
TJ = 25°C 0.026 0.025 0.024 0.023 0.022 VGS = 10 V
25°C
15 V
0
20
40
60
80
100
120
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 -50 -25 0 25 50 75 100 125 150 1 0 VGS = 10 V ID = 27.5 A
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
10000
VGS = 0 V
TJ = 125°C 100°C
I DSS , LEAKAGE (nA)
1000
100
10
25°C
50
100
150
200
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
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