|
Details, datasheet, quote on part number:MUN5115DW1
| |
Datasheet text preview:
MUN5111DW1T1 Series
Preferred Devices
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
http://onsemi.com
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT-363 package which is ideal for low-power surface mount applications where board space is at a premium.
(3) R1 Q1
(2) R2
(1)
Q2 R2 (4) R1 (5) (6)
· · · ·
Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel
6 1
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value - 50 -50 -100 Unit Vdc Vdc mAdc
SOT-363 CASE 419B STYLE 1
MARKING DIAGRAM
6 XXd 1 XX = Specific Device Code d = Date Code = (See Page 2)
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance - Junction-to-Ambient Thermal Resistance - Junction-to-Lead Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Symbol PD Max 187 (Note 1.) 256 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) 670 (Note 1.) 490 (Note 2.) Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) - 55 to +150 Unit mW mW/°C °C/W
R J A
DEVICE MARKING INFORMATION
Unit mW mW/°C °C/W °C/W °C
Preferred devices are recommended choices for future use and best overall value. See specific marking information in the device marking table on page 2 of this data sheet.
Symbol PD
R J A R J L TJ, Tstg
© Semiconductor Components Industries, LLC, 2003
1
December, 2003 - Rev. 5
Publication Order Number: MUN5111DW1T1/D
MUN5111DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1 MUN5137DW1T1 Package SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 Marking 0A 0B 0C 0D 0E 0F 0G 0H 0J 0K 0L 0M 0N 0P R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 R2 (K) 10 22 47 47 1.0 2.2 4.7 47 47 47 100 22 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = -50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = -50 V, IB = 0) Emitter-Base Cutoff Current (VEB = -6.0 V, IC = 0) MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1 MUN5137DW1T1 ICBO ICEO IEBO - - - - - - - - - - - - - - - - -50 -50 - - - - - - - - - - - - - - - - - - -100 -500 -0.5 -0.2 -0.1 -0.2 -0.9 -1.9 -4.3 -2.3 -1.5 -0.18 -0.13 -0.2 -0.05 -0.13 - - nAdc nAdc mAdc
Collector-Base Breakdown Voltage (IC = -10 µA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3.) (IC = -2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS (Note 3.)
Collector-Emitter Saturation Voltage (IC = -10 mA, IE = -0.3 mA) (IC = -10 mA, IB = -5 mA) MUN5130DW1T1/MUN5131DW1T1 (IC = -10 mA, IB = -1 mA) MUN5115DW1T1/MUN5116DW1T1 MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% VCE(sat) - - -0.25 Vdc
http://onsemi.com
2
MUN5111DW1T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 4.) (Continued)
DC Current Gain (VCE = -10 V, IC = -5.0 mA) MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1 MUN5137DW1T1 MUN5111DW1T1 MUN5112DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5113DW1T1 MUN5136DW1T1 MUN5137DW1T1 VOH hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 - - - - - - - - - - - - - - -4.9 60 100 140 140 250 250 5.0 15 27 140 130 140 130 140 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Vdc -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 - Vdc
Output Voltage (on) (VCC = -5.0 V, VB = -2.5 V, RL = 1.0 k)
VOL
(VCC = -5.0 V, VB = -3.5 V, RL = 1.0 k) (VCC = -5.0 V, VB = -5.5 V, RL = 1.0 k) (VCC = -5.0 V, VB = -4.0 V, RL = 1.0 k)
Output Voltage (off) (VCC = -5.0 V, VB = -0.5 V, RL = 1.0 k) (VCC = -5.0 V, VB = -0.05 V, RL = 1.0 k) MUN5130DW1T1 (VCC = -5.0 V, VB = - 0.25 V, RL = 1.0 k) MUN5115DW1T1 MUN5116DW1T1 MUN5131DW1T1 MUN5133DW1T1 Input Resistor MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1 MUN5137DW1T1
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6
k
Resistor Ratio MUN5111DW1T1/MUN5112DW1T1/ MUN5113DW1T1/MUN5136DW1T1 MUN5114DW1T1 MUN5115DW1T1/MUN5116DW1T1 MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5137DW1T1 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
R1/R2
http://onsemi.com
3
|
|
