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Details, datasheet, quote on part number:MUN5116
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Datasheet text preview:
MUN5111T1 Series
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC70/SOT323 package which is designed for low power surface mount applications.
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PNP SILICON BIAS RESISTOR TRANSISTORS
· · · ·
Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC70/SOT323 package can be soldered using wave or reflow. The modified gullwinged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. · Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
PIN 1 BASE (INPUT)
R1 R2
PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND)
3 1 2 SC70/SOT323 CASE 419 STYLE 3
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Lead Junction and Storage Temperature Range 1. FR4 @ Minimum Pad 2. FR4 @ 1.0 x 1.0 inch Pad Symbol PD Max 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) 618 (Note 1) 403 (Note 2) 280 (Note 1) 332 (Note 2) 55 to +150 Unit mW
MARKING DIAGRAM
6x M °C/W °C/W °C/W °C 6x x M = Specific Device Code = (See Marking Table) = Date Code
R J A R J L TJ, Tstg
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
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March, 2002 Rev. 6
Publication Order Number: MUN5111T1/D
MUN5111T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device MUN5111T1 MUN5112T1 MUN5113T1 MUN5113T3 MUN5114T1 MUN5115T1 (Note 3) MUN5116T1 (Note 3) MUN5130T1 (Note 3) MUN5131T1 (Note 3) MUN5132T1 (Note 3) MUN5133T1 (Note 3) MUN5134T1 (Note 3) MUN5135T1 (Note 3) MUN5136T1 MUN5137T1 Package SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 Marking 6A 6B 6C 6D 6E 6F 6G 6H 6J 6K 6L 6M 6N 6P R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 R2 (K) 10 22 47 47 1.0 2.2 4.7 47 47 47 100 22 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
3. New devices. Updated curves to follow in subsequent data sheets.
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MUN5111T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current (VCB = 50 V, IE = 0) CollectorEmitter Cutoff Current (VCE = 50 V, IB = 0) EmitterBase Cutoff Current (VEB = 6.0 V, IC = 0) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 nAdc nAdc mAdc
CollectorBase Breakdown Voltage (IC = 10 µA, IE = 0) CollectorEmitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS (Note 4)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 150 140 0.25 Vdc
CollectorEmitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1 (IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/ MUN5132T1/MUN5133T1/MUN5134T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5111T1 MUN5112T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5113T1 MUN5136T1 MUN5137T1
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k)
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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