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Details, datasheet, quote on part number:MUN5237T1
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Datasheet text preview:
MUN5211T1 Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC70/SOT323 package which is designed for low power surface mount applications.
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NPN SILICON BIAS RESISTOR TRANSISTORS
· · · ·
Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC70/SOT323 package can be soldered using wave or reflow. The modified gullwinged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. · Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
PIN 1 BASE (INPUT)
R1 R2
PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND)
3 1 2 SC70/SOT323 CASE 419 STYLE 3
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Lead Junction and Storage Temperature Range 1. FR4 @ Minimum Pad 2. FR4 @ 1.0 x 1.0 inch Pad Symbol PD Max 202 (Note 1.) 310 (Note 2.) 1.6 (Note 1.) 2.5 (Note 2.) 618 (Note 1.) 403 (Note 2.) 280 (Note 1.) 332 (Note 2.) 55 to +150 Unit mW mW/°C °C/W °C/W °C 8x = Specific Device Code x = (See Marking Table) M = Date Code 8x M
MARKING DIAGRAM
R J A R J L TJ, Tstg
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
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January, 2001 Rev. 4
Publication Order Number: MUN5211T1/D
MUN5211T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 (Note 3.) MUN5216T1 (Note 3.) MUN5230T1 (Note 3.) MUN5231T1 (Note 3.) MUN5232T1 (Note 3.) MUN5233T1 (Note 3.) MUN5234T1 (Note 3.) MUN5235T1 (Note 3.) MUN5236T1 (Note 3.) MUN5237T1 (Note 3.) Package SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 SC70/SOT323 Marking 8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 8M 8N 8P R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 R2 (K) 10 22 47 47 1.0 2.2 4.7 47 47 47 100 22 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
3. New devices. Updated curves to follow in subsequent data sheets.
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MUN5211T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5236T1 MUN5237T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 nAdc nAdc mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS (Note 4.)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5236T1 MUN5237T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5230T1/MUN5231T1 (IC = 10 mA, IB = 1 mA) MUN5215T1/MUN5216T1/ MUN5232T1/MUN5233T1/MUN5234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5211T1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5213T1 MUN5236T1 MUN5237T1
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k)
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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