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Details, datasheet, quote on part number:MUN5311DW1T1
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| Part: | MUN5311DW1T1 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => Bias Resistor Transistors |
| Description: | Bias Resistor Transistor , Package: SC-88 (SOT-363), Pins=6 |
| Company: | ON Semiconductor |
| Datasheet: | Download MUN5311DW1T1 datasheet File size : 187 kB |
| Request For quote: | Find where to buy MUN5311DW1T1
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Datasheet text preview:
MUN5311DW1T1 Series
Preferred Devices
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT363 package which is ideal for low power surface mount applications where board space is at a premium.
(3) R1 Q1 Q2 R2 (4) R1 (5) (6)
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(2) R2 (1)
· · · ·
Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel
6
5 4
1
2
3
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
SOT363 CASE 419B STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Lead Junction and Storage Temperature 1. FR4 @ Minimum Pad 2. FR4 @ 1.0 x 1.0 inch Pad xx Symbol PD Max 187 (Note 1.) 256 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) 670 (Note 1.) 490 (Note 2.) Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) 55 to +150 Unit mW mW/°C °C/W xx = Device Marking = (See Page 2)
R J A
Symbol PD
Unit mW mW/°C °C/W °C/W °C
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2 of this data sheet.
R J A R J L TJ, Tstg
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
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January, 2001 Rev. 6
Publication Order Number: MUN5311DW1T1/D
MUN5311DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 (Note 3.) MUN5316DW1T1 (Note 3.) MUN5330DW1T1 (Note 3.) MUN5331DW1T1 (Note 3.) MUN5332DW1T1 (Note 3.) MUN5333DW1T1 (Note 3.) MUN5334DW1T1 (Note 3.) MUN5335DW1T1 (Note 3.) Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 Marking 11 12 13 14 15 16 30 31 32 33 34 35 R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 R2 (K) 10 22 47 47 1.0 2.2 4.7 47 47 47 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, minus sign for Q1 (PNP) omitted) Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 nAdc nAdc mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
3. New resistor combinations. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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MUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, minus sign for Q1 (PNP) omitted) (Continued) Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 5.)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5330DW1T1/MUN5331DW1T1 (IC = 10 mA, IB = 1 mA) MUN5315DW1T1/MUN5316DW1T1 MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5311DW1T1 MUN5312DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 MUN5313DW1T1
VCE(sat)
VOL VOH MUN5330DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5333DW1T1 MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 0.8 0.055 0.38 0.038 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 1.0 0.1 0.47 0.047 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 1.2 0.185 0.56 0.056 4.9 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k)
Vdc
Input Resistor
k
Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1/MUN5316DW1T1 MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
R1/R2
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