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Details, datasheet, quote on part number:MUN5313DW1T1
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Datasheet text preview:
MUN5311DW1T1 Series
Preferred Devices
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Features
(3) R1 Q1 Q2 R2 (4) R1 (5) (6)
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(2) R2 (1)
· · · · ·
Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel Pb-Free Package is Available
6 1
SOT-363 CASE 419B STYLE 1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, - minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
MARKING DIAGRAM
6 XXd 1 XX = Specific Device Code d = Date Code = (See Page 2)
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance - Junction-to-Ambient Thermal Resistance - Junction-to-Lead Junction and Storage Temperature 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad
© Semiconductor Components Industries, LLC, 2004
Symbol PD
Max 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) 670 (Note 1) 490 (Note 2) Max 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) 493 (Note 1) 325 (Note 2) 188 (Note 1) 208 (Note 2) - 55 to +150
Unit mW mW/°C °C/W
Rq J A
ORDERING AND DEVICE MARKING INFORMATION
See detailed ordering, shipping, and specific marking information in the table on page 2 of this data sheet.
Symbol PD
Unit mW mW/°C °C/W °C/W °C
Preferred devices are recommended choices for future use and best overall value.
Rq J A Rq J L TJ, Tstg
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September, 2004 - Rev. 9
Publication Order Number: MUN5311DW1T1/D
MUN5311DW1T1 Series
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
Device MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5316DW1T1G MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 Package SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 (Pb-Free) SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 Marking 11 12 13 14 15 16 16 30 31 32 33 34 35 R1 (K) 10 22 47 10 10 4.7 4.7 1.0 2.2 4.7 4.7 22 2.2 R2 (K) 10 22 47 47 1.0 2.2 4.7 47 47 47 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 ICBO ICEO IEBO - - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 - - nAdc nAdc mAdc Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
V(BR)CBO V(BR)CEO
Vdc Vdc
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MUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) (Continued) Characteristic ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 - 60 100 140 140 350 350 5.0 15 30 200 150 140 - - - - - - - - - - - - - 0.25 Vdc Symbol Min Typ Max Unit
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5330DW1T1/MUN5331DW1T1 (IC = 10 mA, IB = 1 mA) MUN5315DW1T1/MUN5316DW1T1 MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MUN5311DW1T1 MUN5312DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 MUN5313DW1T1
VCE(sat)
VOL - - - - - - - - - - - - VOH MUN5330DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5333DW1T1 MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 - 0.8 0.055 0.38 0.038 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 - 1.0 0.1 0.47 0.047 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 - 1.2 0.185 0.56 0.056 4.9 - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 -
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Vdc
Input Resistor
kW
Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1/MUN5316DW1T1 MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
R1/R2
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