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Details, datasheet, quote on part number:MV104RLRA
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| Part: | MV104RLRA |
| Category: | Discrete => Diodes & Rectifiers => Tuning Diodes |
| Description: | Small Signal T092 Tuning Diode 32V, Package: TO-92 (TO-226), Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download MV104RLRA datasheet File size : 38 kB |
| Request For quote: | Find where to buy MV104RLRA
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Datasheet text preview:
ON Semiconductort
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control a n d tuning, or any topoftheline application requiring backtoback diode configurations for minimum signal distortion and detuning. · High Figure of Merit Q = 140 (Typ) @ VR = 3.0 Vdc, f = 100 MHz · Guaranteed Capacitance Range 3742 pF @ VR = 3.0 Vdc (MV104) · Dual Diodes Save Space and Reduce Cost · Monolithic Chip Provides Near Perfect Matching Guaranteed ± 1.0% (Max) Over Specified Tuning Range
MV104
DUAL VOLTAGE VARIABLE CAPACITANCE DIODE
1 2 3
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Total Power Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 32 200 280 2.8 +125 55 to +150 Unit Vdc mAdc mW mW/°C °C °C
CASE 2911, STYLE 15 TO92 (TO226AA)
Pin 1 A1 Pin 2 C
Pin 3 A2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current TA = 25°C (VR = 30 Vdc) TA = 60°C Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 32 -- -- -- Typ -- -- -- 280 Max -- 50 500 -- Unit Vdc nAdc ppm/°C
CT, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MV104 Min 37 Max 42
Q, Figure of Merit VR = 3.0 Vdc f = 100 MHz Min 100 Typ 140
CR, Capacitance Ratio C3/C30 f = 1.0 MHz Min 2.5 Max 2.8
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 Rev. 2
Publication Order Number: MV104/D
MV104
TYPICAL CHARACTERISTICS (Each Diode)
100 CT , DIODE CAPACITANCE (pF) 70 Q, FIGURE OF MERIT 550 450 350 250 150 10 0.3 50 TA = 25°C f = 100 MHz
40
20
0.5
1.0
2.0
3.0
5.0 7.0 10
20
30
0
3.0
6.0
9.0
12
15
18
21
24
27
30
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance (Each Diode)
2000 1000 Q, FIGURE OF MERIT 500 200 100 50 20 10 VR = 3.0 Vdc TA = 25°C 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75
Figure 2. Figure of Merit versus Voltage
CT , DIODE CAPACITANCE (NORMALIZED)
VR = 2.0 V 4.0 V 30 V NORMALIZED to CT at TA = 25°C
20
30
50
70
100
200 300
-50
-25
0
+25
+50
+75
+100
+125
f, FREQUENCY (MHz)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Figure of Merit versus Frequency
100 50 I R , REVERSE CURRENT (nA) 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01
Figure 4. Diode Capacitance versus Temperature
TA = 125°C
TA = 75°C
TA = 25°C
0
5.0
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Reverse Current versus Reverse Voltage
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MV104
PACKAGE DIMENSIONS TO92 (TO226AA) CASE 2911 ISSUE AL
A R P L
SEATING PLANE
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---
K
XX G H V
1
D J C SECTION XX N N
YLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2
DIM A B C D G H J K L N P R V
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