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Details, datasheet, quote on part number:NCN6010DTBR2
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| Part: | NCN6010DTBR2 |
| Category: | Interface and Interconnect => Smart Card Interface ICs |
| Description: | Power Management And Level Shifter For Sim (Subscriber Identification Module) Cards, Package: Tssop, Pins=14 |
| Company: | ON Semiconductor |
| Datasheet: | Download NCN6010DTBR2 datasheet File size : 178 kB |
| Request For quote: | Find where to buy NCN6010DTBR2
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Datasheet text preview:
NCN6010 SIM Card Supply and Level Shifter
The NCN6010 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller. A builtin DC/DC converter makes the NCN6010 useable to drive any type of SIM card. The device fulfills the GSM 11.11 specification. The external MPU has an access to a dedicated input STOP pin, providing a way to switch off the power applied to the SIM card in case of failure or when the card is removed.
Features http://onsemi.com MARKING DIAGRAM
14 TSSOP14 CASE 948G 1 1 A L Y W = Assembly Location = Wafer Lot = Year = Work Week NCN 6010 ALYW
· · · · ·
Supports 3.0 V or 5.0 V Operating SIM Card Builtin Pull Up Resistor for I/O Pin in Both Directions All Pins are Fully ESD Protected, According to GSM Specification Supports 10 MHz Clock 6.0 kV ESD Proof on SIM Card Pins
14
Typical Applications
· Cellular Phone SIM Interface · Identification Module
VDD
PIN CONNECTIONS
VDD 1 C4 4.7 µF 1 2 3 P4 P3 P2 P1 P0 4 5 6 7 STOP MOD_VCC PWR_ON I/O CLOCK RESET Ctb SIM_IO GND SIM_CLK SIM_RST GND 9 8 4 C4 3 CLK 2 RST 1 GND VCC GND NCN6010DTB 9 DET TSSOP14 96 Units/Rail NCN6010DTBR2 TSSOP14 2500 Tape & Reel 12 11 10 Cta C2 220 nF VDD SIM_VCC 14 13 STOP 2 C3 1 µF MOD_VCC 3 PWR_ON 4 I/O 5 CLOCK 6 RESET 7 (Top View) 14 SIM_VCC 13 Cta 12 Ctb 11 SIM_IO 10 GND 9 SIM_CLK 8 SIM_RST
GND VCC MPU or GSM Controller
ORDERING INFORMATION
Device Package Shipping
Vpp
8
7
6
5
10
GND
Figure 1. Typical Interface Application
© Semiconductor Components Industries, LLC, 2001
1
DET
I/O
C8
April, 2001 Rev. 1
Publication Order Number: NCN6010/D
NCN6010
STOP
2
ENABLE
14
SIM_VCC
MOD_VCC
3
3 V/5 V 13 Cta POWER UNIT & LOGIC MANAGEMENT 12 PWR_ON ENABLE VCC
PWR_ON
4
Ctb
VDD
1
CLOCK
6
9
SIM_CLK
GND RESET 7 8 SIM_RST
VDD GND
VCC
GND
20 k
I/O I/O 5 DATA I/O GND 10 GND GROUND DATA 11 SIM_IO
Figure 2. NCN6010 Block Diagram
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20 k
NCN6010
PIN DESCRIPTIONS
Pin 1 Name VDD Type POWER Description This pin is connected to the system controller power supply suitable to operate from a 3.6 V typical battery. A low ESR ceramic capacitor (4.7 mF typical) shall be used to bypass the power supply voltage. A Low level on this pin resets the SIM interface, switching off the SIM_VCC, according to the ISO78163 Power Down procedure (See Table 1 and Figure 3). The signal present on this pin programs the SIM_VCC value (See Table 1): MOD_VCC = L SIM_VCC = 5.0 V MOD_VCC = H SIM_VCC = 3.0 V The signal present on this pin controls the SIM_VCC state (See Table 1): PWR_ON = L SIM_VCC = Open, no supply connected to the SIM card. PWR_ON = H SIM_VCC = Active, the card is powered. This pin is connected to an external microcontroller or GSM management unit. A bidirectional level translator adapts the serial I/O signal between the smart card and the external controller. A builtin constant 20 k (typical) resistor provides a high impedance state when not activated. The clock signal, coming from the external controller, must have a Duty Cycle within the Min/Max values defined by the specification (typically 50%). The builtin level shifter translates the input signal to the external SIM card CLK input. The RESET signal present at this pin is connected to the SIM card. The internal level shifter translates the level according to the voltages present at pin 1 and the SIM_VCC programmed value. This pin is connected to the RESET pin of the card connector. A level translator adapts the external RESET signal to the SIM card. A builtin active pull down connects this pin to ground when the device is in a nonoperating mode. This pin is connected to the CLK pin of the card connector. The CLOCK signal comes from the external clock generator, the internal level shifter being used to adapt the voltage defined for the SIM_VCC. A builtin active pull down connects this pin to ground when the device is in a nonoperating mode. This pin is the GROUND reference for the integrated circuit and associated signals. Cares must be observed to avoid voltage spikes when the device operates in a normal operation. This pin handles the connection to the serial I/O of the card connector. A bidirectional level translator adapts the serial I/O signal between the card and the microcontroller. A 20 k (typical) pull up resistor provides a High impedance state for the SIM card I/O link. POWER POWER POWER This pin is connected to the external capacitor used by the internal Charge Pump converter. Using Low ESR ceramic type is recommended (X5R or X7R). This pin is connected to the external capacitor used by the internal Charge Pump converter. Using Low ESR ceramic type is recommended (X5R or X7R). This pin is connected to the SIM card power supply pin. An internal Charge Pump converter is programmable by the external MPU to supply either 3.0 V or 5.0 V output voltage. An external 1.0 µF minimum ceramic capacitor (ESR t 100 mW, X5R or X7R recommended) must be connected across SIM_VCC and GND. During a normal operation, the SIM_VCC voltage can be set to 3.0 V followed by a 5.0 V value, or can start directly to any of these two values. When the voltage is adjusted downward (from 5.0 V to 3.0 V) cares must be observed as reverse peak current can flow from the external capacitors to the battery during a short amount of time (in the 1.0 µs range). When such a voltage adjustment is necessary, it is recommended to force SIM_VCC to zero, wait 350 µs minimum, then reprogram the chip to get SIM_VCC = 3.0 V.
2 3
STOP MOD_VCC
INPUT INPUT
4
PWR_ON
INPUT
5
I/O
INPUT
6
CLOCK
INPUT
7
RESET
INPUT
8
SIM_RST
OUTPUT
9
SIM_CLK
OUTPUT
10
GND
GROUND
11
SIM_I/O
12 13 14
Cta Ctb SIM_VCC
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