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Details, datasheet, quote on part number:NCP5355D
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| Part: | NCP5355D |
| Category: | Power Management => Power Distribution/Switches => MOSFET Drivers => MOSFET/IGBT Drivers |
| Description: | Ana Buck PWR MOSFET Drivr, Package: Soic, Pins=8 |
| Company: | ON Semiconductor |
| Datasheet: | Download NCP5355D datasheet File size : 86 kB |
| Request For quote: | Find where to buy NCP5355D
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Datasheet text preview:
NCP5355 12 V Synchronous Buck Power MOSFET Driver
The NCP5355 is a dual MOSFET gate driver optimized to drive the gates of both high- and low-side Power MOSFETs in a Synchronous Buck converter. The NCP5355 is an excellent companion to multiphase controllers that do not have integrated gate drivers, such as ON Semiconductor's NCP5306, NCP5314 or NCP5316. This architecture provides the power supply designer greater flexibility by being able to locate the gate drivers close to the MOSFETs. Driving MOSFETs with a 12 V source as opposed to a 5.0 V can significantly reduce conduction losses. Optimized internal, adaptive nonoverlap circuitry further reduces switching losses by preventing simultaneous conduction of both MOSFETs. The floating top driver design can accommodate MOSFET drain voltages as high as 26 V. Both gate outputs can be driven low by applying a low logic level to the Enable (EN) pin. An Undervoltage Lockout function ensures that both driver outputs are low when the supply voltage is low, and a Thermal Shutdown function provides the IC with overtemperature protection. The NCP5355 has the same pinout as the NCP5351 5.0 V Gate Driver.
Features http://onsemi.com MARKING DIAGRAM
1 SO-8 D SUFFIX CASE 751 1 A L Y W = Assembly Location = Wafer Lot = Year = Work Week 8 5355 ALYW
8
PIN CONNECTIONS
DRN TG BST CO 1 8 PGND BG VS EN
· · · · · · · · · · ·
8.0-14 V Gate Drive Capability 2.0 A Peak Drive Current Rise and Fall Times < 15 ns Typical into 3300 pF Propagation Delay from Inputs to Outputs < 30 ns Adaptive Nonoverlap Time Optimized for Large Power MOSFETs Floating Top Driver Accommodates Applications Up to 26 V Undervoltage Lockout to Prevent Switching when the Input Voltage is Low Thermal Shutdown Protection Against Overtemperature TG to DRN Pull-Down Resistor Prevents HV Supply-Induced Turn On of Top MOSFET BG to PGND Pull-Down Resistor Prevents Transient Turn On of Bottom MOSFET Internal Bootstrap Diode Reduces Parts Count and Total Solution Cost
ORDERING INFORMATION
Device NCP5355D NCP5355DR2 Package SO-8 SO-8 Shipping 98 Units/Rail 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2003
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March, 2003 - Rev. 4
Publication Order Number: NCP5355/D
NCP5355
5V VS 5 V Regulator 5V Overtemp. Shutdown 5V 5V VS 5V + Level Shift Driver UVLO 8.0/7.0 V 5V Nonoverlap 30 ns 5V CO 5V 2.0 µA Nonoverlap 30 ns 5V 5V 5V Level Shift EN Driver BG VS VS 20 k 30 k 30 k 20 k 100 k DRN TG 5V BST
PGND 5V
Figure 1. Block Diagram
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NCP5355
MAXIMUM RATINGS*
Rating Operating Junction Temperature, TJ Package Thermal Resistance: Junction to Case, RJC Junction to Ambient, RJA Storage Temperature Range, TS Lead Temperature Soldering: JEDEC Moisture Sensitivity *The maximum package power dissipation must be observed. 1. 60 seconds maximum above 183°C. NOTE: This device is ESD sensitive. Use standard ESD precautions when handling. Reflow: (SMD styles only) (Note 1) Value Internally Limited 45 165 -65 to 150 230 peak 1 Unit °C °C/W °C/W °C °C -
MAXIMUM RATINGS
Pin Symbol VS BST Pin Name Main Supply Voltage Input VMAX 15 V VMIN -0.3 V ISOURCE NA ISINK 2.0 A Peak (< 100 µs) 250 mA DC 2.0 A Peak (< 100 µs) 250 mA DC NA
Bootstrap Supply Voltage Input Switching Node (Bootstrap Supply Return)
30 V wrt/PGND 15 V wrt/DRN 26 V
-0.3 V wrt/DRN
NA 2.0 A Peak (< 100 µs) 250 mA DC 2.0 A Peak (< 100 µs) 250 mA DC 2.0 A Peak (< 100 µs) 250 mA DC 1.0 mA 1.0 mA 2.0 A Peak (< 100 µs) 250 mA DC
DRN
-1.0 V DC -5.0 V for 100 ns -6.0 V for 20 ns -0.3 V wrt/DRN
TG
High-Side Driver Output (Top Gate) Low-Side Driver Output (Bottom Gate) TG and BG Control Input Enable Input Ground
30 V wrt/PGND 15 V wrt/DRN 15 V
2.0 A Peak (< 100 µs) 250 mA DC 2.0 A Peak (< 100 µs) 250 mA DC 1.0 mA 1.0 mA NA
BG
-0.3 V
CO EN PGND
5.5 V 5.5 V 0V
-0.3 V -0.3 V 0V
NOTE:
All voltages are with respect to PGND except where noted.
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