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Details, datasheet, quote on part number:NCR169DRLRA
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| Part: | NCR169DRLRA |
| Category: | Discrete => Thyristors => SCR (Silicon Controlled Rectifiers) |
| Description: | Sensitive Gate Silicon Controlled Rectifier, Package: TO-92 (TO-226), Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download NCR169DRLRA datasheet File size : 69 kB |
| Request For quote: | Find where to buy NCR169DRLRA
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Datasheet text preview:
NCR169D Advance Information General Purpose Sensitive Gate Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in a cost effective plastic TO-226AA package. · Sensitive Gate Allows Direct Triggering by Microcontrollers and Other Logic Circuits · OnState Current Rating of 0.8 Amperes RMS at 80°C · Surge Current Capability 10 Amperes · Immunity to dV/dt 20 V/µsec Minimum at 110°C · Glass-Passivated Surface for Reliability and Uniformity · Device Marking: NCR169D, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive OffState Voltage (Note 1.) (TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open) On-State RMS Current (TC = 80°C) 180° Conduction Angles Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) Circuit Fusing Consideration (t = 10 ms) Forward Peak Gate Power (TA = 25°C, Pulse Width v 1.0 µs) Forward Average Gate Power (TA = 25°C, t = 20 ms) F o r w a r d Peak Gate Current (TA = 25°C, Pulse Width v 1.0 µs) Reverse Peak Gate Voltage (TA = 25°C, Pulse Width v 1.0 µs) Operating Junction Temperature Range @ Rate VRRM and VDRM Storage Temperature Range Symbol VDRM, VRRM IT(RMS) ITSM Value 400 Unit Volts TO92 (TO226AA) CASE 029 STYLE 10 K G
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SCR 0.8 AMPERES RMS 400 VOLTS
G A K
MARKING DIAGRAM
NCR 169D YWW
0.8 10
Amp Amps
A Y = Year WW = Work Week 123
I2t PGM PG(AV) IGM VGRM TJ Tstg
0.415 0.1 0.10 1.0 5.0 40 to 110 40 to 150
A2s Watt
PIN ASSIGNMENT
Watt Amp Volts °C °C 1 2 3 Cathode Gate Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2000
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December, 2000 Rev. 0
Publication Order Number: NCR169D/D
NCR169D
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction to Case Junction to Ambient Lead Solder Temperature (t1/16 from case, 10 secs max) Symbol R J C R J A TL Max 75 200 260 Unit °C/W °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 1.) (VD = Rated VDRM and VRRM; RGK = 1.0 k) IDRM, IRRM TC = 25°C TC = 110°C 10 0.1 µA mA
ON CHARACTERISTICS
P e a k Forward OnState Voltage(*) (ITM = 1.0 Amp Peak @ TA = 25°C) Gate Trigger Current (Continuous dc) (Note 2.) (VAK = 12 V, RL = 100 Ohms) Holding Current (Note 2.) (VAK = 12 V, IGT = 0.5 mA) Latch Current (VAK = 12 V, IGT = 0.5 mA, RGK = 1.0 k) Gate Trigger Voltage (Continuous dc) (Note 2.) (VAK = 12 V, RL = 100 Ohms, IGT = 10 mA) TC = 25°C TC = 25°C TC = 40°C TC = 25°C TC = 40°C TC = 25°C TC = 40°C VTM IGT IH IL VGT 40 0.5 0.6 0.62 1.7 200 5.0 10 10 15 0.8 1.2 Volts µA mA mA Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage (VD = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms, TJ = 110°C) Critical Rate of Rise of OnState Current (IPK = 20 A; Pw = 10 µsec; diG/dt = 1.0 A/µsec, Igt = 20 mA) *Indicates Pulse Test: Pulse Width 1.0 ms, Duty Cycle 1%. 1. RGK = 1000 Ohms included in measurement. 2. Does not include RGK in measurement. dV/dt 20 35 V/µs
di/dt
50
A/µs
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NCR169D
Voltage Current Characteristic of SCR
+ Current Anode + VTM on state IRRM at VRRM IH
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak on State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode
+ Voltage IDRM at VDRM Forward Blocking Region (off state)
100 GATE TRIGGER VOLTAGE (VOLTS) 95 90 GATE TRIGGER CURRENT ( m A) 80 70 60 50 40 30 20 10 40 25 10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 40 25 10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110
Figure 1. Typical Gate Trigger Current versus Junction Temperature
Figure 2. Typical Gate Trigger Voltage versus Junction Temperature
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