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Details, datasheet, quote on part number:NGB15N41CLT4
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Datasheet text preview:
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
Preferred Device
Ignition IGBT 15 Amps, 410 Volts
NChannel DPAK, D2PAK and TO220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and OverVoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. · Ideal for CoilonPlug Applications · DPAK Package Offers Smaller Footprint and Increased Board Space · GateEmitter ESD Protection · Temperature Compensated GateCollector Voltage Clamp Limits Stress Applied to Load · Integrated ESD Diode Protection · New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area · Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices · Low Saturation Voltage · High Pulsed Current Capability · Optional Gate Resistor (RG) and GateEmitter Resistor (RGE)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating CollectorEmitter Voltage CollectorGate Voltage GateEmitter Voltage Collector CurrentContinuous @ TC = 25°C Pulsed ESD (Human Body Model) R = 1500 , C = 100 pF ESD (Machine Model) R = 0 , C = 200 pF Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD 8.0 ESD PD TJ, Tstg 800 107 0.71 55 to +175 V Watts W/°C °C 1 Value 440 440 15 15 50 Unit VDC VDC VDC ADC AAC kV TO220AB CASE 221A STYLE 9 1 2 3 4 4 D2PAK CASE 418B STYLE 4
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15 AMPS 410 VOLTS VCE(on) 3 2.1 V @ IC = 10 A, VGE . 4.5 V
C
G
RG RGE
E 4 12 3 DPAK CASE 369A STYLE 7
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ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking section on page 8 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
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September, 2002 Rev. 3
Publication Order Number: NGD15N41CL/D
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
UNCLAMPED COLLECTORTOEMITTER AVALANCHE CHARACTERISTICS (55° TJ 175°C)
Characteristic Single Pulse CollectortoEmitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.6 A, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 15 A, L = 1.8 mH, Starting TJ = 125°C Symbol EAS 250 200 Value Unit mJ
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient DPAK (Note 1) D2PAK (Note 1) Symbol R J C R J A R J A R J A TL Value 1.4 100 50 62.5 275 °C Unit °C/W
TO220 Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Clamp Voltage Clam BVCES IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current g ICES VCE = 350 V 350 V, VGE = 0 V Reverse CollectorEmitter Leakage Current g IECS VCE = 24 V 24 TJ = 40°C to 40 C 150°C TJ = 40°C to 150°C TJ = 25°C TJ = 150°C TJ = 40°C TJ = 25°C TJ = 150°C TJ = 40°C Reverse CollectorEmitter Clamp Voltage g BVCES(R) IC = 75 mA 75 A TJ = 25°C TJ = 150°C TJ = 40°C GateEmitter Clamp Voltage GateEmitter Leakage Current Gate Resistor (Optional) Gate Emitter Resistor BVGES IGES RG RGE IG = 5.0 mA VGE = 10 V TJ = 40°C to 150°C TJ = 40°C to 150°C TJ = 40°C to 150°C TJ = 40°C to 150°C 380 380 27 30 25 11 384 10 410 410 2.0 10 1.0 0.7 12 0.1 33 36 31 13 640 70 16 440 440 20 40* 10 2.0 25* 1.0 37 40 35 15 1000 26 VDC µADC
VDC
µADC
mA
VDC
k
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage g VGE(th) IC = 1 0 mA, 1.0 A VGE = VCE Threshold Temperature Coefficient (Negative) TJ = 25°C TJ = 150°C TJ = 40°C 1.1 0.75 1.2 1.4 1.0 1.6 3.4 1.9 1.4 2.1* mV/°C VDC
1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range.
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NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
ELECTRICAL CHARACTERISTICS (continued)
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
ON CHARACTERISTICS (continued) (Note 3)
CollectortoEmitter OnVoltage g VCE(on) IC = 6 0 A 6.0 A, VGE = 4.0 V TJ = 25°C TJ = 150°C TJ = 40°C TJ = 25°C IC = 8 0 A 8.0 A, VGE = 4.0 V TJ = 150°C TJ = 40°C TJ = 25°C IC = 10 A 10 A, VGE = 4.0 V TJ = 150°C TJ = 40°C TJ = 25°C IC = 10 A 10 A, VGE = 4.5 V Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A TJ = 150°C TJ = 40°C TJ = 40°C to 150°C 1.0 0.9 1.1 1.3 1.2 1.4 1.4 1.5 1.4 1.3 1.3 1.4 8.0 1.6 1.5 1.65 1.8 1.7 1.8 2.0 2.0 2.0 1.9 1.9 1.95 15 1.8 1.8 1.9* 2.0* 1.9 2.0* 2.2 2.3* 2.2 2.1 2.1 2.1* 25 Mhos VDC
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Transfer Capacitance CI S S COSS CR S S VCC = 25 V VGE = 0 V 25 V, f = 1.0 MHz 400 TJ = 40°C to 40°C 150°C 30 3.0 650 55 4.5 1000 100 8.0 pF
SWITCHING CHARACTERISTICS
TurnOff Delay Time (Inductive) y ( ) td(off) VCC = 300 V, IC = 6.5 A , RG = 1.0 k, L = 300 µH 1 0 k 300 H VCC = 300 V, IC = 6.5 A , RG = 1.0 k, L = 300 µH 1 0 k 300 H VCC = 300 V, IC = 6.5 A , RG = 1.0 k, RL = 46 , 1 0 k 46 VCC = 300 V, IC = 6.5 A , RG = 1.0 k, RL = 46 , 1 0 k 46 VCC = 10 V, IC = 6.5 A , RG = 1.0 k, RL = 1 5 1 0 k 1.5 VCC = 10 V, IC = 6.5 A , RG = 1.0 k, RL = 1 5 1 0 k 1.5 TJ = 25°C TJ = 150°C TJ = 25°C TJ = 150°C TJ = 25°C TJ = 150°C TJ = 25°C TJ = 150°C TJ = 25°C TJ = 150°C TJ = 25°C TJ = 150°C 4.0 4.5 6.0 10 3.0 3.5 8.0 12 0.7 0.7 4.0 5.0 10 10 12 12 10 10 15 15 4.0 4.0 7.0 7.0 µSec µSec µSec
Fall Time (Inductive) ( )
tf
TurnOff Delay Time (Resistive) y ( )
td(off)
Fall Time ( (Resistive) )
tf
TurnOn Delay Time y
td(on)
Rise Time
tr
3. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range.
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