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Details, datasheet, quote on part number:NGB18N40CLBT4
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Datasheet text preview:
NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts
N-Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. · Ideal for Coil-on-Plug Applications · Gate-Emitter ESD Protection · Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load · Integrated ESD Diode Protection · New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area · Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices · Low Saturation Voltage · High Pulsed Current Capability · Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE) · Emitter Ballasting for Short-Circuit Capability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Gate Voltage Gate-Emitter Voltage Collector Current-Continuous @ TC = 25°C - Pulsed ESD (Human Body Model) R = 1500 , C = 100 pF ESD (Machine Model) R = 0 , C = 200 pF Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD 8.0 ESD PD TJ, Tstg 800 115 0.77 -55 to +175 V Watts W/°C °C 1 Gate 3 Emitter 2 Collector Value 430 430 18 18 50 Unit VDC VDC VDC ADC AAC kV 1
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18 AMPS 400 VOLTS VCE(on) 3 2.0 V @ IC = 10 A, VGE . 4.5 V
C
G
RG RGE
E
4 2 3
D2PAK CASE 418B STYLE 4
MARKING DIAGRAM
4 Collector
GB 18N40B YWW
GB18N40B = NGB18N40CLB Y = Year WW = Work Week
ORDERING INFORMATION
Device NGB18N40CLBT4 Package D2PAK Shipping 800/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
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March, 2003 - Rev. 0
Publication Order Number: NGB18N40CLB/D
NGB18N40CLBT4
UNCLAMPED COLLECTOR-T O-EMITTER AVALANCHE CHARACTERISTICS (-55° TJ 175°C)
Characteristic Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125°C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C Symbol EAS 400 300 EAS(R) 2000 mJ Value Unit mJ
MAXIMUM SHORT-CIRCUIT TIMES (-55°C TJ 150°C)
Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period) Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) tsc1 tsc2 750 5.0 ms ms
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient D2PAK (Note 1) R J C R J A TL 1.3 50 275 °C/W °C/W °C
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Clam Voltage Clamp BVCES IC = 2 0 mA 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current g ICES VCE = 350 V, VGE = 0 V Reverse Collector-Emitter Leakage Current g IECS VCE = -24 V TJ = -40°C to 40 C 150°C TJ = -40°C to 150°C TJ = 25°C TJ = 150°C TJ = -40°C TJ = 25°C TJ = 150°C TJ = -40°C Reverse Collector-Emitter Clamp Voltage g BVCES(R) IC = -75 mA TJ = 25°C TJ = 150°C TJ = -40°C Gate-Emitter Clamp Voltage Gate-Emitter Leakage Current Gate Resistor (Optional) Gate Emitter Resistor BVGES IGES RG RGE IG = 5.0 mA VGE = 10 V TJ = -40°C to 150°C TJ = -40°C to 150°C TJ = -40°C to 150°C TJ = -40°C to 150°C 380 390 27 30 25 11 384 10 395 405 2.0 10 1.0 0.7 12 0.1 33 36 32 13 640 70 16 420 430 20 40* 10 2.0 25* 1.0 37 40 35 15 1000 26 VDC µADC
VDC
µADC
mA
VDC
k
ON CHARACTERISTICS (Note 2)
g Gate Threshold Voltage VGE(th) IC = 1 0 mA, 1.0 A VGE = VCE Threshold Temperature Coefficient (Negative) TJ = 25°C TJ = 150°C TJ = -40°C 1.1 0.75 1.2 1.4 1.0 1.6 3.4 1.9 1.4 2.1* mV/°C VDC
1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range.
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NGB18N40CLBT4
ELECTRICAL CHARACTERISTICS (continued)
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
ON CHARACTERISTICS (continued) (Note 3)
Collector-to-Emitter On-Voltage g VCE(on) IC = 6.0 A, 4.0 VGE = 4.0 V TJ = 25°C TJ = 150°C TJ = -40°C TJ = 25°C IC = 8.0 A, 4.0 VGE = 4.0 V TJ = 150°C TJ = -40°C TJ = 25°C IC = 10 A, 4.0 VGE = 4.0 V TJ = 150°C TJ = -40°C TJ = 25°C IC = 15 A, 4.0 VGE = 4.0 V TJ = 150°C TJ = -40°C TJ = 25°C IC = 10 A, 4.5 VGE = 4.5 V Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A TJ = 150°C TJ = -40°C TJ = -40°C to 150°C 1.0 0.9 1.1 1.3 1.2 1.4 1.4 1.5 1.4 1.8 2.0 1.7 1.3 1.3 1.4 8.0 1.4 1.3 1.45 1.6 1.55 1.6 1.8 1.8 1.8 2.2 2.4 2.1 1.8 1.75 1.8 14 1.6 1.6 1.7* 1.9* 1.8 1.9* 2.05 2.0 2.1* 2.5 2.6* 2.5 2.0* 2.0* 2.0* 25 Mhos VDC
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Transfer Capacitance CI S S COSS CR S S VCC = 25 V, VGE = 0 V 1.0 MHz f = 1.0 MHz 400 TJ = -40°C to 40°C 150°C 50 4.0 800 75 7.0 1000 100 10 pF
SWITCHING CHARACTERISTICS
Turn-Of f Delay Time (Resistive) Fall Time (Resistive) Turn-On Delay Time Rise Time td(off) tf td(on) tr VCC = 300 V, IC = 6.5 A RG = 1.0 k, RL = 46 , VCC = 300 V, IC = 6.5 A RG = 1.0 k, RL = 46 , VCC = 10 V, IC = 6.5 A RG = 1.0 k, RL = 1.5 VCC = 10 V, IC = 6.5 A RG = 1.0 k, RL = 1.5 TJ = 25°C TJ = 25°C TJ = 25°C TJ = 25°C 4.0 9.0 0.7 4.5 10 15 4.0 7.0 µSec µSec
3. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range.
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