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Details, datasheet, quote on part number:NIB6404-5L
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Datasheet text preview:
NIB6404-5L
Preferred Device
HDPlust 52 Amps, 40 Volts
Self Protected with Temperature Sense NChannel D2PAK
HDPlus devices are an advanced series of Power MOSFETs which utilize ON Semiconductor's latest MOSFET technology process to achieve the lowest possible onresistance per silicon area while incorporating additional features such as clamp diodes. They are c a p a b l e of withstanding high energy in the avalanche and commutation modes. The avalanche energy is specified to eliminate guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. This new HDPlus device features integrated GatetoSource diodes for ESD protection, and GatetoDrain clamp for overvoltage protection. Also, this device integrates a sense diode for temperature monitoring. · Ultra Low RDS(on) Provides Higher Efficiency · IDSS Specified at Elevated Temperature · Avalanche Energy Specified · Overvoltage Protection · FET ESD Human Body Model Discharge Sensitivity Class 3 · Temperature Sense Diode
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage GatetoSource Voltage Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (Note 1) (VDD = 25 Vdc, VGS = 5.0 Vdc, IL(pk) = 25 A, L = 1.4 mH, RG = 10 k) Drain Current Continuous @ TA = 25°C Continuous @ TA = 140°C Single Pulse (tpv10 µs) Total Power Dissipation (t 10 seconds) Linear Derating Factor Thermal Resistance JunctiontoCase JunctiontoAmbient (Note 1) Symbol VDSS VDGR VGS TJ, Tstg EAS Value 40 40 "10 55 to +175 450 Unit Vdc Vdc Vdc °C mJ NIB6404 = Device Code A = Assembly Location Y = Year WW = Work Week D2PAK CASE 936D PLASTIC NIB6404 AYWW G T1 T2 S
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52 AMPERES 40 VOLTS RDS(on) = 20 m
D T2
G T1 S
MARKING DIAGRAM
D
Adc ID ID IDM PD @ TA = 25°C R J C R J A 52 25 200 115 0.76 1.3 80 W W/°C °C/W
Preferred devices are recommended choices for future use and best overall value.
ORDERING INFORMATION
Device NIB64045L Package D2PAK Shipping 800 Tape & Reel
1. Measured while surface mounted to an FR4 board using the minimum recommended pad size. Typical value is 64°C/W.
Observe the general handling precautions for electrostaticdischarge sensitive devices (ESD) to prevent damage.
© Semiconductor Components Industries, LLC, 2002
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February, 2002 Rev. 2
Publication Order Number: NIB64045L/D
NIB64045L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 2) (VGS = 0 Vdc, ID = 250 µAdc, 55°C < TJ < 175°C) Temperature Coefficient (Negative) GatetoSource Clamp Voltage (Note 2) (VGS = 0 Vdc, IG = 20 µAdc) Zero Gate Voltage Drain Current (VDS = 35 Vdc, VGS = 0 Vdc) (VDS = 15 Vdc, VGS = 0 Vdc) (VDS = 35 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = 5.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (Note 2) (VDS = VGS, ID = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 2) (VGS = 5.0 Vdc, ID = 20 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) (Note 2) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (VDS = 32 Vdc, ID = 25 Adc, VGS = 5.0 Vdc) (Note 2) (VDD = 32 Vdc, ID = 25 Adc, VGS = 5.0 Vdc, 5 0 Vdc RG = 10 k) (Note 2) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage Reverse Recovery Time (IS = 25 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) (Note 2) Reverse Recovery Stored Charge TEMPERATURE SENSE DIODE CHARACTERISTICS Forward (Reverse) OnVoltage Temperature Coefficient (Negative) Forward Voltage Hysteresis (IF(R) = 250 µAdc) (Note 2) (IF(R) = 250 µAdc, TJ = 125°C) IF(R) = 250 µAdc, TJ = 160°C IF(R) = 125 µAdc to 250 µAdc VAC(ACR) VFTC Vhys 715 1.57 25 743 570 1.71 37 775 1.85 50 mVdc mV/°C mVdc (IS = 20 Adc, VGS = 0 Vdc) (Note 2) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr ta tb QRR 0.876 0.746 60 29 32 80 1.2 pC Vdc ns 11.2 38.5 31.5 29.5 29 6.0 16 2.0 nC µs (VDS = 25 Vdc, VGS = 0 Vdc, 25 Vd Vd f = 1.0 MHz) Ci s s Co s s Crss 1720 525 120 pF VGS(th) 1.0 RD S ( o n ) gFS TBD 1.7 4.5 18 34 2.0 20 Vdc mV/°C m mhos V(BR)DSS 40 V(BR)GSS IDSS IGSS 1.1 0.2 4.0 0.02 100 2.0 20 1.0 µAdc 10 51 7.0 13 55 20 Vdc mV/°C Vdc µAdc Symbol Min Typ Max Unit
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NIB64045L
TYPICAL ELECTRICAL CHARACTERISTICS
50 I D, DRAIN CURRENT (AMPS) 45 40 35 30 25 20 15 10 5.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) VGS = 2.5 V 3.0 V TJ = 25°C 40 5.0 V 4.5 V 4.0 V I D, DRAIN CURRENT (AMPS) 3.5 V 35 30 25 20 TJ = 175°C 15 10 5.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATETOSOURCE VOLTAGE (VOLTS) 25°C 55°C
Figure 1. OnRegion Characteristics
RDS(on), DRAINTOSOURCE RESISTANCE (mW) 50 45 40 35 30 25 20 15 10 5.0 0 0 10 20 30 40 50 ID, DRAIN CURRENT (AMPS) 55°C 25°C TJ = 175°C RDS(on), DRAINTOSOURCE RESISTANCE (mW) 50 45 40 35 30 25 20 15 10 5.0 0 0
Figure 2. Transfer Characteristics
VGS = 3.0 V
3.5 V
4.0 V 5.0 V 10 V TJ = 25°C 10 20 30 40 50
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 50 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (°C) VGS = 5.0 V ID = 20 A C, CAPACITANCE (pF)
4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 5.0 10 15 20 25 30 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) Co s s Crss Ci s s VGS = 0 V f = 1.0 MHz TJ = 25°C
Figure 5. OnResistance Variation with Temperature
Figure 6. Capacitance Variation
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