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Details, datasheet, quote on part number:NID5001NT4G
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Datasheet text preview:
NID5001N
Preferred Device
Self-protected FET with Temperature and Current Limit
HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor's latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp.
Features http://onsemi.com
VDSS (Clamped) 42 V ID MAX (Limited) 33 A*
RDS(ON) TYP 23 m @ 10 V
Drain Overvoltage Protection MPWR
· · · · · · · ·
Low RDS(on) Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection
Gate Input
RG
ESD Protection Temperature Limit Current Limit Current Sense
Source
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Internally Clamped Drain-to-Gate Voltage Internally Clamped (RGS = 1.0 MW) Gate-to-Source Voltage Drain Current Continuous Symbol VDSS VDGR VGS ID PD 64 1.0 1.56 Rq J C Rq J A Rq J A EAS 1.95 120 80 1215 °C/W Value 42 42 "14 Unit Vdc Vdc Vdc NID5001N = Device Code Y = Year WW = Work Week DPAK CASE 369C STYLE 2 1 2 3
MARKING DIAGRAM
YWW
X NID
5001N
Internally Limited W
1 = Gate 2 = Drain 3 = Source
Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Thermal Resistance - Junction-to-Case Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 4.5 Apk, L = 120 mH, RG = 25 W) Operating and Storage Temperature Range
ORDERING INFORMATION
Device NID5001NT4 Package DPAK Shipping 2500/Tape & Reel
mJ
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
TJ, Tstg
-55 to 150
°C
1. Minimum FR4 PCB, steady state. 2. Mounted onto a 2 square FR4 board (1 square, 2 oz. Cu 0.06 thick single-sided, t = steady state).
*Max current may be limited below this value depending on input conditions.
© Semiconductor Components Industries, LLC, 2004
1
January, 2004 - Rev. 6
Publication Order Number: NID5001N/D
NID5001N
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) (VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 1.2 mAdc) Threshold Temperature Coefficient Static Drain-to-Source On-Resistance (Note 3) (VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 25°C) (VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 150°C) Static Drain-to-Source On-Resistance (Note 3) (VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 25°C) (VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 150°C) Source-Drain Forward On Voltage (IS = 5 A, VGS = 0 V) SWITCHING CHARACTERISTICS Turn-on Time e Turn-off Time Turn-on Time e Turn-off Time Slew Rate On Slew-Rate Off VGS = 5.0 Vdc VDD = 25 Vdc ID = 1.0 Adc Ext RG = 2 5 W 2.5 VGS = 10 Vdc VDD = 25 Vdc ID = 1.0 Adc Ext RG = 2.5 W RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V T(on) T(off) T(on) T(off) -dVDS/dton dVDS/dtoff 32 68 11 86 0.5 0.35 40 75 15 95 V/ms V/ms ms ms VGS(th) 1.0 RD S ( o n ) 23 43 RD S ( o n ) 28 50 VSD 0.80 34 60 1.1 V 29 55 mW 1.8 5.0 2.0 Vdc -mV/°C mW V(BR)DSS 42 42 IDSS 1.5 6.5 IGSSF 50 5.0 100 mAdc 46 44 50 50 Vdc mAdc Symbol Min Typ Max Unit
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) Current Limit (VGS = 5.0 Vdc) VDS = 10 V (VGS = 5.0 Vdc, TJ = 150°C) (VGS = 10 Vdc) VDS = 10 V (VGS = 10 Vdc, TJ = 150°C) Temperature Limit (Turn-off) Temperature Limit (Circuit Reset) Temperature Limit (Turn-off) Temperature Limit (Circuit Reset) VGS = 5.0 Vdc VGS = 5.0 Vdc VGS = 10 Vdc VGS = 10 Vdc TLIM(off) TLIM(on) TLIM(off) TLIM(on) ILIM 21 12 29 13 150 135 150 135 30 19 41 24 175 160 165 150 36 30 49 31 200 185 185 170 Adc Adc °C °C °C °C
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro-Static Discharge Capability Human Body Model (HBM) Machine Model (MM) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. ESD 4000 400 V
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NID5001N
TYPICAL PERFORMANCE CURVES
28 VGS = 10 V to 4.2 V ID, DRAIN CURRENT (AMPS) 24 20 16 12 8 4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 3.2 V 3.0 V 2.8 V 2.6 V 4V ID, DRAIN CURRENT (AMPS) 3.8 V 3.6 V TJ = 25°C 3.4 V 28 24 20 TC = -55°C 16 12 8 4 0 1 25°C 100°C 2 3 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 VDS 10 V
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.2 ID = 5 A TJ = 25°C 0.035
Figure 2. Transfer Characteristics
TJ = 25°C 0.03 VGS = 5 V
0.15
0.1
0.025 VGS = 10 V 0.02
0.05
0 2 4 6 5 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3 10
0.015 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 5 A VGS = 10 V 1.4 IDSS, LEAKAGE (A) 10000 100000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V
1.2
TJ = 150°C 1000 TJ = 100°C
1
0.8 0.6 -50 100 10
-25
0
25
50
75
100
15
20
25
30
35
40
45
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
http://onsemi.com
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