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Details, datasheet, quote on part number:NID5003N
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Datasheet text preview:
NID5003N
Preferred Device
Self-Protected FET with Temperature and Current Limit
42 V, 20 A, Single N-Channel, DPAK
HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp.
Features http://onsemi.com
VDSS (Clamped) 42 V ID MAX (Limited) 20 A*
RDS(on) TYP 42 mW @ 10 V
Drain Overvoltage Protection MPWR
Gate Input
RG
· · · · · ·
Short Circuit Protection/Current Limit Thermal Shutdown with Automatic Restart IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection
ESD Protection Temperature Limit Current Limit Current Sense
Source
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Internally Clamped Gate-to-Source Voltage Drain Current Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Thermal Resistance Junction-to-Case Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 3.2 Apk, L = 120 mH, RG = 25 W) Operating and Storage Temperature Range (Note 3) Continuous Symbol VDSS VGS ID PD 1.3 2.3 °C/W Rq J C Rq J A Rq J A EAS 3.0 95 54 600 mJ Value 42 "14 Unit Vdc Vdc DPAK CASE 369C STYLE 2 D5003N A Y W = Device Code = Assembly Location = Year = Work Week 1 2 3
MARKING DIAGRAM
AYW D5003N 1 = Gate 2 = Drain 3 = Source
Internally Limited W
ORDERING INFORMATION
Device NID5003NT4 Package DPAK Shipping 2500/Tape & Reel
TJ, Tstg
-55 to 150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted onto minimum pad size (0.412 square) FR4 PCB, 1 oz cu. 2. Mounted onto 1 square pad size (1.127 square) FR4 PCB, 1 oz cu. 3. Normal pre-fault operating range. See thermal limit range conditions.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
*Max current may be limited below this value depending on input conditions.
© Semiconductor Components Industries, LLC, 2004
1
August, 2004 - Rev. 2
Publication Order Number: NID5003N/D
NID5003N
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) (VGS = 0 Vdc, ID = 250 mAdc, TJ = -40°C to 150°C) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 1.2 mAdc) Threshold Temperature Coefficient Static Drain-to-Source On-Resistance (Note 4) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C) Static Drain-to-Source On-Resistance (Note 4) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C) Source-Drain Forward On Voltage (IS = 7.0 A, VGS = 0 V) SWITCHING CHARACTERISTICS Turn-on Time (Vin to 90% ID) Turn-off Time (Vin to 10% ID) Slew Rate On Slew Rate Off RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V T(on) T(off) -dVDS/dton dVDS/dtoff - - - - 16 80 1.4 0.5 20 100 - - V/ms V/ms ms VGS(th) 1.0 - RD S ( o n ) - - RD S ( o n ) - - VSD - 50 88 0.95 58 125 1.1 V 42 76 51 104 mW 1.7 5.0 2.2 - Vdc -mV/°C mW V(BR)DSS 42 40 IDSS - - IGSSF - 0.6 2.5 50 5.0 - 125 mAdc 46 45 51 51 Vdc mAdc Symbol Min Typ Max Unit
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Current Limit Current Limit Temperature Limit (Turn-off) Thermal Hysteresis Temperature Limit (Turn-off) Thermal Hysteresis Input Current during Thermal Fault Input Current during Thermal Fault (VGS = 5.0 Vdc) VDS = 10 V (VGS = 5.0 Vdc, TJ = 150°C) (VGS = 10 Vdc) VDS = 10 V (VGS = 10 Vdc, TJ = 150°C) VGS = 5.0 Vdc VGS = 5.0 Vdc VGS = 10 Vdc VGS = 10 Vdc VDS = 35 V, (VGS = 5.0 V, Tj = 150°C) VDS = 35 V, (VGS = 10 V, Tj = 150°C) ILIM ILIM TLIM(off) DTLIM(on) TLIM(off) DTLIM(on) Ig(fault) Ig(fault) 12 7 18 13 150 - 150 - 0.6 2.0 18 13 22 18 175 15 165 15 - - 24 18 30 25 200 - 185 - - - °C °C °C °C mA mA Adc
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro-Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD 4000 400 - - - - V
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part.
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2
NID5003N
TYPICAL PERFORMANCE CURVES
35 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 25 VDS 10 V 20 25°C TJ = -55°C
15
10
100°C
5 0 1 1.5 3.5 3 2 2.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2 4 6 5 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3 10 ID = 5 A TJ = 25°C 0.06
Figure 2. Transfer Characteristics
TJ = 25°C 0.055 0.05 0.045 VGS = 10 V 0.04 0.035 0.03 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (AMPS) VGS = 5 V
Figure 3. On-Resistance vs. Gate-to-Source Voltage
1.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 -30 -10 10 10 30 50 70 90 110 130 150 ID = 5 A VGS = 10 V IDSS, LEAKAGE (nA) 10000 100000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V TJ = 150°C
1000
TJ = 100°C
100
0
5
10
15
20
25
30
35
40
45
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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