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Details, datasheet, quote on part number:NID9N05CLT4
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| Part: | NID9N05CLT4 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => SmartDiscrete™ |
| Description: | 55V Clamp, Smartdiscrete, Esd, Dpak , Package: Dpak, Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download NID9N05CLT4 datasheet File size : 71 kB |
| Request For quote: | Find where to buy NID9N05CLT4
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Datasheet text preview:
NID9N05CL Power MOSFET 9 Amps, 52 Volts
N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a DPAK Package
Benefits http://onsemi.com
· High Energy Capability for Inductive Loads · Low Switching Noise Generation
Features
9 AMPERES 52 V CLAMPED RDS(on) = 90 mW (Typ.)
Drain (Pins 2, 4)
· · · · ·
Diode Clamp Between Gate and Source ESD Protection - HBM 5000 V Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance
Gate (Pin 1)
RG
Overvoltage Protection
MPWR
Applications
· Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Internally Clamped Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25°C Drain Current - Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 125°C (VDD = 50 V, ID(pk) = 1.5 A, VGS = 10 V, RG = 25 W) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Sec. Symbol VDSS VGS ID IDM PD TJ, Tstg EAS Value 52-59 ±12 9.0 35 28.8 -55 to 175 160 Unit Vdc Vdc A W °C mJ
ESD Protection
Source (Pin 3)
MARKING DIAGRAM
1 DPAK CASE 369A STYLE 2 D9N05CL Y WW = Device Code = Year = Work Week 2 3 YWW
X
4
D9N05CL 1 2 3 4 = Gate = Drain = Source = Drain
Rq J C Rq J A Rq J A TL
5.2 72 100 260
°C/W
ORDERING INFORMATION
°C Device NID9N05CLT4 NID9N05CL Package DPAK DPAK Shipping 2500/Tape & Reel 75 Units/Rail
1. When surface mounted to an FR4 board using 1 pad size, (Cu area 1.127 in2) 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu area 0.412 in2)
© Semiconductor Components Industries, LLC, 2003
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March, 2003 - Rev. 3
Publication Order Number: NID9N05CL/D
NID9N05CL
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 1.0 mAdc) Temperature Coefficient (Negative) Zero Gate Voltage Drain Current (VDS = 40 Vdc, VGS = 0 Vdc) (VDS = 40 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate-Body Leakage Current (VGS = ±8 Vdc, VDS = 0 Vdc) (VGS = ±14 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 100 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 4.0 Vdc, ID = 1.5 Adc) (VGS = 3.5 Vdc, ID = 0.6 Adc) (VGS = 3.0 Vdc, ID = 0.2 Adc) (VGS = 12 Vdc, ID = 9.0 Adc) (VGS = 12 Vdc, ID = 12 Adc) Forward Transconductance (Note 3) (VDS = 15 Vdc, ID = 9.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance Input Capacitance Output Capacitance Transfer Capacitance 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. (VDS = 25 Vdc, VGS = 0 V, f = 10 kHz) (VDS = 40 Vdc, VGS = 0 V, f = 10 kHz) Ci s s Co s s Crss Ci s s Co s s Crss 155 60 25 175 70 30 250 100 40 pF pF VGS(th) 1.3 RD S ( o n ) 70 67 gFS 153 175 90 95 24 181 364 1210 Mhos 1.75 -4.5 2.5 Vdc mV/°C mW V(BR)DSS 52 IDSS IGSS ±22 10 25 ±10 mAdc 55 -10 59 Vdc mV/°C mAdc Symbol Min Typ Max Unit
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NID9N05CL
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time Gate Charge (VGS = 4.5 Vdc, VDS = 40 Vdc, ID = 9.0 Adc) (Note 3) Gate Charge (VGS = 4.5 Vdc, VDS = 15 Vdc, ID = 1.5 Adc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 4.5 Adc, VGS = 0 Vdc) (Note 3) (IS = 4.0 Adc, VGS = 0 Vdc) (IS = 4.5 Adc, VGS = 0 Vdc, TJ = 125°C) (IS = 4.5 Adc, VGS = 0 Vdc, dIs/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge ESD CHARACTERISTICS Electro-Static Discharge Capability Human Body Model (HBM) Machine Model (MM) 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. ESD 5000 500 V VSD 0.86 0.845 0.725 700 200 500 6.5 1.2 mC Vdc (VGS = 10 Vdc, VDD = 15 Vdc, ID = 1.5 Adc, RG = 50 W) (VGS = 10 Vdc, VDD = 15 Vdc, ID = 1.5 Adc, RG = 2 kW) (VGS = 10 Vdc, VDD = 40 Vdc, ID = 9.0 Adc, RG = 9.0 W) td(on) tr td(off) tf td(on) tr td(off) tf td(on) tr td(off) tf QT Q1 Q2 QT Q1 Q2 130 500 1300 1150 200 500 2500 1800 120 275 1600 1100 4.5 1.2 2.7 3.6 1.0 2.0 200 750 2000 1850 7.0 nC nC ns ns ns Symbol Min Typ Max Unit
Reverse Recovery Time
trr ta tb QRR
ns
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