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Details, datasheet, quote on part number:NIF5002NT1
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Datasheet text preview:
NIF5002N
Preferred Device
Self-Protected FET with Temperature and Current Limit
42 V, 2.0 A, Single N-Channel, SOT-223
HDPlusTM devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp. Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection
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V(BR)DSS (Clamped) 42 V
RDS(ON) TYP 165 mW @ 10 V
ID MAX 2.0 A*
*Max current limit value is dependent on input condition. Drain Overvoltage Protection MPWR
Features
· · · · · · ·
Gate Input
RG
ESD Protection Temperature Limit Current Limit Current Sense
Applications
· Lighting · Solenoids · Small Motors
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Internally Clamped Drain-to-Gate Voltage Internally Clamped (RG = 1.0 MW) Gate-to-Source Voltage Continuous Drain Current Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TT = 25°C (Note 3) Symbol VDSS VDGR VGS ID PD Value 42 42 "14 1.1 1.7 8.9 -55 to 150 150 Unit V V V 5002N L YM SOT-223 CASE 318E Style 3 GATE
Source
MARKING DIAGRAM
1 4 DRAIN ONLYM 5002N 2 DRAIN 3 SOURCE (Top View) = Specific Device Code = Location Code = Year, Month
Internally Limited W
Operating Junction and Storage Temperature Single Pulse Drain-to-Source Avalanche Energy (VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W)
TJ, Tstg EAS
°C mJ
ORDERING INFORMATION
Device NIF5002NT1 NIF5002NT3 Package SOT-223 SOT-223 Shipping 1000/Tape & Reel 4000/Tape & Reel
THERMAL RESISTANCE RATINGS
Rating Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - Steady State (Note 2) Junction-to-Tab - Steady State (Note 3) Symbol Rq J A Rq J A Rq J T Value 114 72 14 Unit °C/W
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
1. Surface-mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 thick). 2. Surface-mounted onto 2 sq. FR4 board (1 sq., 1 oz. Cu, 0.06 thick). 3. Surface-mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 thick).
© Semiconductor Components Industries, LLC, 2004
Preferred devices are recommended choices for future use and best overall value.
1
January, 2004 - Rev. 5
Publication Order Number: NIF5002N/D
NIF5002N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 4) 4) Zero Gate Voltage Drain Current V(BR)DSS VGS = 0 V ID = 10 mA V, 10 mA TJ = 25°C TJ = 150°C TJ = 25°C TJ = 150°C 42 40 46 45 0.25 1.1 50 55 55 4.0 20 100 mA V -mV/°C mW mA V Symbol Test Condition Min Typ Max Unit
IDSS
VGS = 0 V VDS = 32 V V, 32
Gate Input Current ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Gate Threshold Temperature Coefficient Static Drain-to-Source On-Resistance
IGSSF VGS(th) VGS(th)/TJ RD S ( o n )
VDS = 0 V, VGS = 5.0 V VGS = VDS, ID = 150 mA TJ = 25°C TJ = 150°C TJ = 25°C TJ = 150°C TJ = 25°C TJ = 150°C 1.3
1.8 4.0 165 305 195 360 190 350 1.0
2.2 6.0 200 400 230 460 230 460
VGS = 10 V ID = 1 7 A 10 V, 1.7
VGS = 5 0 V ID = 1 7 A 5.0 V, 1.7
VGS = 5 0 V ID = 0 5 A 5.0 V, 0.5 Source-Drain Forward On Voltage SWITCHING CHARACTERISTICS Turn-on Time Turn-off Time Slew Rate On Slew-Rate Off td(on) td(off) dVDS/dton dVDS/dtoff VSD
VGS = 0 V, IS = 7.0 A VGS = 10 V, VDD = 12 V, ID = 2.5 A, RL = 4 7 W, 25A 4.7 W (10% Vin to 90% ID) RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V, 70% to 50% RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V, 50% to 70%
V ms
20 65 1.2 0.5
30 100
V/ms
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Current Limit ILIM VDS = 10 V VGS = 5 0 V 10 V, 5.0 TJ = 25°C TJ = 150°C TJ = 25°C TJ = 150°C 3.1 2.0 3.8 2.8 150 135 150 135 4.7 3.2 5.7 4.3 175 160 165 150 6.3 4.3 7.6 5.7 200 185 185 170 °C A
VDS = 10 V VGS = 10 V 10 V, 10 Temperature Limit (Turn-off) Temperature Limit (Circuit Reset) Temperature Limit (Turn-off) Temperature Limit (Circuit Reset) TLIM(off) TLIM(on) TLIM(off) TLIM(on) VGS = 5.0 V VGS = 5.0 V VGS = 10 V VGS = 10 V
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro-Static Discharge Capability ESD Human Body Model (HBM) Machine Model (MM) 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part. 4000 400 V
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NIF5002N
TYPICAL PERFORMANCE CURVES
7 ID, DRAIN CURRENT (AMPS) 6 5 4 3 2 1 0 0 1 2 10 V 9V 8V 7V 6V 5V 4V 3.8 V 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 2.6 V 3 4 TJ = 25°C ID, DRAIN CURRENT (AMPS) 4 VDS 10 V
3
2 100°C 1 25°C TJ = -55°C 1 2 3 1.5 3.5 2.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4
0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2 5 4 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3 10 ID = 1.7 A TJ = 25°C 0.3
Figure 2. Transfer Characteristics
TJ = 25°C 0.25 VGS = 5 V 0.2 0.15 VGS = 10 V 0.1 0.05 0 2 3 4 5 ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
2.5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 1.7 A VGS = 5 V 2 IDSS, LEAKAGE (nA) 1000 10000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V TJ = 150°C
1.5
100 TJ = 100°C 10
1
0.5 0 -50 1 10
-25
0
25
50
75
100
125
150
20
30
40
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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