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Details, datasheet, quote on part number:NIF5003T1
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| Part: | NIF5003T1 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Smartdiscrete, 42V Clamped, Temp & Current Limits, Esd, SOT-223, Package: SOT-223 (TO-261), Pins=4 |
| Company: | ON Semiconductor |
| Datasheet: | Download NIF5003T1 datasheet File size : 44 kB |
| Request For quote: | Find where to buy NIF5003T1
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Datasheet text preview:
NIF5003N
Preferred Device
Advance Information Self-protected FET with Temperature and Current Limit
HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp.
Features http://onsemi.com
10 AMPERES 40 VOLTS CLAMPED RDS(on) = 53 mW
Drain Overvoltage Protection MPWR
Gate Input
RG
· · · · · · ·
Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection
ESD Protection Temperature Limit Current Limit Current Sense
Source
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Internally Clamped Drain-to-Gate Voltage Internally Clamped (RGS = 1.0 MW) Gate-to-Source Voltage Drain Current - Continuous @ TA = 25°C - Continuous @ TA = 100°C - Pulsed (tp 10 ms) @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TA = 25°C (Note 3) Symbol VDSS VDGR VGS ID ID IDM PD 1.4 2.2 10.4 12 87 55 600 W SOURCE °C/W (Top View) NIF5003N = Specific Device Code L = Location Code WW = Work Week Value 40 40 "14 Unit Vdc Vdc Vdc SOT-223 CASE 318E Style 3
MARKING DIAGRAM
1 NIF5003N LWW GATE 2 DRAIN 3 4 DRAIN
Internally Limited
Total Power Dissipation
Thermal ResistanceJunction-to-T ab Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Single Pulse Drain- to- Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, VDS = 40 Vdc, IL = 11.6 Apk, L = 2.0 mH, RG = 25 W) Operating and Storage Temperature Range 1. Mounted onto min pad board. 2. Mounted onto 1 pad board. 3. Mounted onto large heatsink.
Rq J T Rq J A Rq J A EAS
mJ
ORDERING INFORMATION
TJ, Tstg -55 to 150 °C Device NIF5003NT1 NIF5003NT3 Package SOT-223 SOT-223 Shipping 1000/Tape & Reel 4000/Tape & Reel
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2003
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April, 2003 - Rev. P0
Publication Order Number: NIF5003N/D
NIF5003N
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) (VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) (VGS = -5.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 150 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 4) (VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 25°C) (VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 150°C) Static Drain-to-Source On-Resistance (Note 4) (VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 25°C) (VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 150°C) Source-Drain Forward On Voltage (IS = 7 A, VGS = 0 V) SWITCHING CHARACTERISTICS Turn-on Delay Time Turn-on Rise Time Turn-of f Delay Time Turn-of f Fall Time Slew Rate On Slew-Rate Off 10% Vin to 10% ID RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V 10% ID to 90% ID RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V 90% Vin to 90% ID RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V 90% ID to 10% ID RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V td(on) trise td(off) tfall -dV DS/dton dVDS/dtoff 4.0 15 30 40 0.5 0.35 ms ms ms ms V/ms V/ms VGS(th) 1.0 RD S ( o n ) RD S ( o n ) VSD 63 113 1.05 V 53 95 mW 1.7 4.0 2.0 6.0 Vdc mV/°C mW V(BR)DSS 42 42 IDSS IGSS 50 550 100 1000 0.5 2.0 2.0 10 mAdc 46 45 50 50 Vdc mV/°C mAdc Symbol Min Typ Max Unit
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) Current Limit Current Limit Temperature Limit (Turn-of f) Temperature Limit (Circuit Reset) Temperature Limit (Turn-of f) Temperature Limit (Circuit Reset) (VGS = 5.0 Vdc) VDS = 10 V (VGS = 5.0 Vdc, TJ = 150°C) (VGS = 10 Vdc) VDS = 10 V (VGS = 10 Vdc, TJ = 150°C) VGS = 5.0 Vdc VGS = 5.0 Vdc VGS = 10 Vdc VGS = 10 Vdc ILIM ILIM TLIM(off) TLIM(on) TLIM(off) TLIM(on) 150 135 150 135 21 12.4 28 16.5 175 160 165 150 200 185 185 170 Adc Adc °C °C °C °C
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro-Static Discharge Capability Electro-Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD ESD 4000 400 V V
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
http://onsemi.com
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NIF5003N
PACKAGE DIMENSIONS
SOT-223 CASE 318E-04 ISSUE K
A F
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NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
S
1 2 3
B
D L G J C 0.08 (0003) H M K
INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN
MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30
http://onsemi.com
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