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Details, datasheet, quote on part number:NIF62514T3
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| Part: | NIF62514T3 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => SmartDiscrete™ |
| Description: | Self-protected Fet, Current And Temp Limit, 42V Clamp, Esd, SOT-223 , Package: SOT-223 (TO-261), Pins=4 |
| Company: | ON Semiconductor |
| Datasheet: | Download NIF62514T3 datasheet File size : 59 kB |
| Request For quote: | Find where to buy NIF62514T3
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Datasheet text preview:
NIF62514
Preferred Device
Self-protected FET with Temperature and Current Limit
HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor's latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp.
Features http://onsemi.com
6.0 AMPERES* 40 VOLTS CLAMPED RDS(on) = 90 mW
Drain Overvoltage Protection MPWR
· · · · · · · ·
Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection Low RDS(on) IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection
Gate Input
RG
ESD Protection Temperature Limit Current Limit Current Sense
Source
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Internally Clamped Drain-to-Gate Voltage Internally Clamped (RGS = 1.0 MW) Gate-to-Source Voltage Drain Current - Continuous @ TA = 25°C - Continuous @ TA = 100°C - Pulsed (tp 10 ms) @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TA = 25°C (Note 3) Symbol VDSS VDGR VGS ID ID IDM PD 1.1 1.73 8.93 14 114 72.3 300 W (Top View) °C/W 62514 L WW = Specific Device Code = Location Code = Work Week Value 40 40 "16 Unit Vdc Vdc Vdc SOT-223 CASE 318E STYLE 3
MARKING DIAGRAM
1 GATE 2 DRAIN 3 SOURCE 62514 LWW 4 DRAIN
Internally Limited
Total Power Dissipation
Thermal Resistance - Junction-to-Tab Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Single Pulse Drain- to- Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, VDS = 40 Vdc, IL = 2.8 Apk, L = 80 mH, RG = 25 W) Operating and Storage Temperature Range 1. Mounted onto min pad board. 2. Mounted onto 1 pad board. 3. Mounted onto large heatsink.
Rq J T Rq J A Rq J A EAS
mJ
ORDERING INFORMATION
Device Package SOT-223 SOT-223 Shipping 1000/Tape & Reel 4000/Tape & Reel
TJ, Tstg
-55 to 150
°C
NIF62514T1 NIF62514T3
*Limited by the current limit circuit.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2003
1
April, 2003 - Rev. 3
Publication Order Number: NIF62514/D
NIF62514
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) (VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) (VGS = -5.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 150 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 4) (VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 25°C) (VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 150°C) Static Drain-to-Source On-Resistance (Note 4) (VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 25°C) (VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 150°C) Source-Drain Forward On Voltage (IS = 7 A, VGS = 0 V) SWITCHING CHARACTERISTICS Turn-on Delay Time Turn-on Rise Time Turn-of f Delay Time Turn-of f Fall Time Slew-Rate On Slew-Rate Off 10% Vin to 10% ID RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V 10% ID to 90% ID RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V 90% Vin to 90% ID RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V 90% ID to 10% ID RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V td(on) trise td(off) tfall -dV DS/dton dVDS/dtoff 4.0 11 32 27 1.5 0.6 8.0 20 50 50 2.5 1.0 ms ms ms ms ms ms VGS(th) 1.0 RD S ( o n ) RD S ( o n ) VSD 105 185 1.05 120 210 V 90 165 100 190 mW 1.7 4.0 2.0 6.0 Vdc mV/°C mW V(BR)DSS 42 42 IDSS IGSS 50 550 100 1000 0.5 2.0 2.0 10 mAdc 46 45 50 50 Vdc mAdc Symbol Min Typ Max Unit
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) Current Limit Current Limit Temperature Limit (Turn-of f) Temperature Limit (Circuit Reset) Temperature Limit (Turn-of f) Temperature Limit (Circuit Reset) (VGS = 5.0 Vdc) (VGS = 5.0 Vdc, TJ = 150°C) (VGS = 10 Vdc) (VGS = 10 Vdc, TJ = 150°C) VGS = 5.0 Vdc VGS = 5.0 Vdc VGS = 10 Vdc VGS = 10 Vdc ILIM ILIM TLIM(off) TLIM(on) TLIM(off) TLIM(on) 6.0 3.0 7.0 4.0 150 135 150 130 9.0 5.0 10.5 7.5 175 160 155 140 11 8.0 13 10 200 185 185 170 Adc Adc °C °C °C °C
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro-Static Discharge Capability Electro-Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD ESD 4000 400 V V
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
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NIF62514
TYPICAL ELECTRICAL CHARACTERISTICS
12 ID, DRAIN CURRENT (AMPS) 10 8 5V 6 4 2 0 0 1 2 3 4 3V TJ = 25°C 5 6 4V VGS = 10 V 7V 6V ID, DRAIN CURRENT (AMPS) 8 TJ = 150°C 7 VGS = 10 V 6 5 5V 4 3 2 1 0 0 1 2 3 4 5 6 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 4V 3V 7V 6V
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Output Characteristics
14 ID, DRAIN CURRENT (AMPS) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ = -40°C 3V VGS = 10 V 5V 4V ID, DRAIN CURRENT (AMPS) 12
Figure 2. Output Characteristics
VDS = 5 V 10 8 6 4 TJ = 150°C 2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE-T O-SOURCE VOLTAGE (VOLTS) TJ = 25°C TJ = -40°C
7V 6V
Figure 3. Output Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW)
Figure 4. Transfer Characteristics
250 225 200 175 150 125 100 75 50 25 0 -50 Typical Maximum VGS = 10 V ID = 1.4 A
250 225 200 175 150 125 100 75 50 25 0 -50 Typical VGS = 5 V ID = 1.4 A Maximum
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Drain-to-Source Resistance versus Junction Temperature
Figure 6. Drain-to-Source Resistance versus Junction Temperature
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