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Details, datasheet, quote on part number:NIF9N05CLT1
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Datasheet text preview:
NIF9N05CL Protected Power MOSFET
2.6 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT-223 Package
http://onsemi.com Benefits
· High Energy Capability for Inductive Loads · Low Switching Noise Generation
Features
VDSS (Clamped) 52 V
RDS(ON) TYP 107 m
ID MAX 2.6 A Drain (Pins 2, 4)
· · · · ·
Diode Clamp Between Gate and Source ESD Protection - HBM 5000 V Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance
Applications
Gate (Pin 1)
RG
Overvoltage Protection
MPWR
· Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Internally Clamped Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25°C - Single Pulse (tp = 10 ms) (Note 1) Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy (VDD = 50 V, ID(pk) = 1.17 A, VGS = 10 V, L = 160 mH, RG = 25 W) Thermal Resistance - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 s Symbol VDSS VGS ID IDM PD TJ, Tstg EAS Value 52-59 ±15 2.6 10 1.69 -55 to 150 110 Unit V V A W °C mJ
ESD Protection
Source (Pin 3)
SOT-223 CASE 318E STYLE 3
MARKING DIAGRAM
1 GATE 2 DRAIN 4 DRAIN F9N05 AWW
°C/W Rq J A Rq J A TL 74 169 260 °C F9N05 A WW SOURCE
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(Top View) = Specific Device Code = Assembly Location = Work Week
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 pad size, (Cu area 1.127 in2) 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu area 0.412 in2)
ORDERING INFORMATION
Device NIF9N05CLT1 NIF9N05CLT3 Package SOT-223 SOT-223 Shipping 1000/Tape & Reel 4000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
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July, 2004 - Rev. 3
Publication Order Number: NIF9N05CL/D
NIF9N05CL
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 V, ID = 1.0 mA, TJ = 25°C) (VGS = 0 V, ID = 1.0 mA, TJ = -40°C to 125°C) Temperature Coefficient (Negative) Zero Gate Voltage Drain Current (VDS = 40 V, VGS = 0 V) (VDS = 40 V, VGS = 0 V, TJ = 125°C) Gate-Body Leakage Current (VGS = ±8 V, VDS = 0 V) (VGS = ±14 V, VDS = 0 V) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 100 mA) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 3.5 V, ID = 0.6 A) (VGS = 4.0 V, ID = 1.5 A) (VGS = 10 V, ID = 2.6 A) Forward Transconductance (Note 3) (VDS = 15 V, ID = 2.6 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance Input Capacitance Output Capacitance Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 10 kHz VDS = 35 V, VGS = 0 V, f = 10 kHz Ci s s Co s s Crss Ci s s Co s s Crss 155 60 25 170 70 30 250 100 40 pF pF VGS(th) 1.3 RD S ( o n ) 190 165 107 gFS 3.8 380 200 125 Mhos 1.75 -4.1 2.5 V mV/°C mW V(BR)DSS 52 50.8 IDSS 10 25 IGSS ±22 ±10 mA 55 54 -9.3 59 59.5 V V mV/°C mA Symbol Min Typ Max Unit
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.
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NIF9N05CL
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge VGS = 4.5 V, VDS = 40 V, ID = 2.6 A (Note 3) Gate Charge VGS = 4.5 V, VDS = 15 V, ID = 1.5 A (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Reverse Recovery Time IS = 1.5 A, VGS = 0 V, dIs/dt = 100 A/ms (Note 3) Reverse Recovery Stored Charge ESD CHARACTERISTICS Electro-Static Discharge Capability Capability Human Body Model (HBM) Machine Model (MM) ESD 5000 500 V IS = 2.6 A, VGS = 0 V (Note 3) IS = 2.6 A, VGS = 0 V, TJ = 125°C VSD trr ta tb QRR 0.81 0.66 730 200 530 6.3 mC 1.5 V ns VGS = 10 V, VDD = 15 V, ID = 2.6 A, RD = 5.8 W VGS = 4.5 V, VDD = 40 V, ID = 1.0 A, RD = 40 W VGS = 4.5 V, VDD = 40 V, ID = 2.6 A, RD = 15.4 W td(on) tr td(off) tf td(on) tr td(off) tf td(on) tr td(off) tf QT Q1 Q2 QT Q1 Q2 275 1418 780 1120 242 1165 906 1273 107 290 1540 1000 4.5 0.9 2.6 3.9 1.0 1.7 nC 7.0 nC ns 465 2400 1320 1900 ns ns Symbol Min Typ Max Unit
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.
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