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Details, datasheet, quote on part number:NLAS1053
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Datasheet text preview:
NLAS1053 2:1 Mux/Demux Analog Switches
The NLAS1053 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very high speed propagation delays and low ON resistances while maintaining CMOS l o w power dissipation. The device consists of a single 2:1 Mux/Demux (SPDT), similar to ON Semiconductor's NLAS4053 analog and digital voltages that may vary across the full power supply range (from VCC to GND). The inhibit and select input pins have over voltage protection that allows voltages above VCC up to 7.0 V to be present without damage or disruption of operation of the part, regardless of the operating voltage.
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High Speed: tPD = 1 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 2 µA (Max) at TA = 25°C High Bandwidth, Improved Linearity, and Low RDSON INH Pin Allows a Both Channels `OFF' Condition (With a High) RDSON 25 , Performance Very Similar to the NLAS4053 Break Before Make Circuitry, Prevents Inadvertent Shorts Useful For Switching Video Frequencies Beyond 50 MHz LatchUp Performance Exceeds 300 mA ESD Performance: HBM > 2000 V; MM > 200 V, CDM > 1500 V Tiny US8 Package, Only 2.1 X 3.0 mm
US8 US SUFFIX CASE 49301
AC
1
D
AC D
= Device Code = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet.
COM 1 INH 2 N/C 3 GND 4
8 7 6 5
VCC CH0 CH1 Select INH H L L
FUNCTION TABLE
Select X L H Ch 0 OFF ON OFF Ch 1 OFF OFF ON
Figure 1. Pin Assignment
© Semiconductor Components Industries, LLC, 2002
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February, 2002 Rev. 0
Publication Order Number: NLAS1053/D
NLAS1053
MAXIMUM RATINGS
Symbol VCC VIN VIS IIK TSTG TL TJ qJ A PD MSL FR VESD Positive DC Supply Voltage Digital Input Voltage (Select and Inhibit) Analog Output Voltage (VCH or VCOM) DC Current, Into or Out of Any Pin Storage Temperature Range Lead Temperature, 1 mm from Case for 10 Seconds Junction Temperature under Bias Thermal Resistance Power Dissipation in Still Air at 85_C Moisture Sensitivity Flammability Rating ESD Withstand Voltage Oxygen Index: 30% 35% Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) Parameter Value -0.5 to +7.0 -0.5 V is +7.0 -0.5 V is VCC +0.5 50 -65 to +150 260 +150 250 250 Level 1 UL94VO (0.125 in) > 2000 200 N/A V Unit V V V mA _C _C _C _C/W mW
ILatchUp LatchUp Performance Above VCC and Below GND at 85_C (Note 5) ±300 mA Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolutemaximumrated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow. 2. Tested to EIA/JESD22A114A. 3. Tested to EIA/JESD22A115A. 4. Tested to JESD22C101A. 5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VIN VIO VIS TA tr, tf Positive DC Supply Voltage Digital Input Voltage (Select and Inhibit) Static or Dynamic Voltage Across an Off Switch Analog Input Voltage (CH, COM) Operating Temperature Range, All Package Types Input Rise or Fall Time, (Enable Input) NORMALIZED FAILURE RATE Vcc = 3.3 V ± 0.3 V Vcc = 5.0 V ± 0.5 V Characteristics Min 2.0 GND GND GND -55 0 0 Max 5.5 5.5 VCC VCC +125 100 20 Unit V V V V °C ns/V
DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES
Junction Temperature 5C 80 90 100 110 120 130 140 Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0
FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130°C TJ = 120°C TJ = 100°C TJ = 110°C TJ = 90°C TJ = 80°C
1 1 10 TIME, YEARS 100 1000
Figure 2. Failure Rate versus Time Junction Temperature
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NLAS1053
DC CHARACTERISTICS Digital Section (Voltages Referenced to GND)
Guaranteed Limit Symbol VIH Parameter Minimum HighLevel Input Voltage, Select and Inhibit Inputs Condition VCC 2.0 2.5 3.0 4.5 5.5 VIL Maximum LowLevel Input Voltage, Select and Inhibit Inputs 2.0 2.5 3.0 4.5 5.5 IIN Maximum Input Leakage Current, Select and Inhibit Inputs Maximum Quiescent Supply Current VIN = 5.5 V or GND 0 V to 5.5 V *55_C to 25_C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $0.1 t85_C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $1.0 t125_C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $1.0 mA V Unit V
ICC
Select and Inhibit = VCC or GND
5.5
1.0
1.0
2.0
mA
DC ELECTRICAL CHARACTERISTICS Analog Section
Guaranteed Limit Symbol RO N Parameter Maximum "ON" Resistance (Figures 17 23) ON Resistance Flatness (Figures 17 23) ON Resistance Match Between Channels CH1 or CH0 Off Leakage Current (Figure 9) COM ON Leakage Current (Figure 9) Condition VIN = VIL or VIH VIS = GND to VCC IINI 10.0 mA VIN = VIL or VIH IINI 10.0 mA VIS = 1V, 2V, 3.5V VIN = VIL or VIH IINI 10.0 mA VCH1 or VCH0 = 3.5 V VIN = VIL or VIH VCH1 or VCH0 = 1.0 VCOM 4.5 V VIN = VIL or VIH VCH1 1.0 V or 4.5 V with VCH0 floating or VCH1 1.0 V or 4.5 V with VCH1 floating VCOM = 1.0 V or 4.5 V VCC 2.5 3.0 4.5 5.5 4.5 -55 to 255C 70 40 20 16 4 < 855C 85 46 28 22 4 < 1255C 105 52 34 28 5 Unit W
RFLAT (ON) D RO N (ON) ICH0 ICH1 ICOM(ON)
W
4.5
2
2
3
W
5.5 5.5
1 1
10 10
100 100
nA nA
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