|
Details, datasheet, quote on part number:NLAS325US
| |
Datasheet text preview:
NLAS325 Dual SPST Analog Switch, Low Voltage, Single Supply
The NLAS325 is a dual SPST (Single Pole, Single Throw) switch, similar to 1/2 a standard 4066. The device permits the independent selection of 2 analog/digital signals. Available in the UltraSmall 8 package. The use of advanced 0.6 µ CMOS process, improves the RON r e s i s t a n c e considerably compared to older higher voltage technologies.
http://onsemi.com MARKING DIAGRAM
8 8 1 US8 US SUFFIX CASE 493
· · · · · · · · · · ·
On Resistance is 20 Typical at 5.0 V Matching is 200 MHz, 3 dB CMOS/TTL Compatible 2000 V ESD (HBM) Ron Flatness +/ 6 at 5.0 V US8 Package Independent Enables; One Positive, One Negative
L7
1
D
L7 = Device Code D = Date Code
PIN ASSIGNMENT
1 2 NO1 1 8 VCC 3 4 5 COM1 2 7 IN1 6 7 IN2 3 6 COM2 8 NO1 COM1 IN2 GND NC2 COM2 IN1 VCC
GND
4
5
NC2
FUNCTION TABLE
On/Off Enable Input Analog Switch 1 Off On Analog Switch 2 On Off
Figure 1. Pinout
L H
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2002
1
January, 2002 Rev. 2
Publication Order Number: NLAS325/D
NLAS325
MAXIMUM RATINGS
Symbol VCC VI VO IIK IOK IO ICC IGND TSTG TL TJ qJ A PD MSL FR VESD DC Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Sink Current DC Supply Current per Supply Pin DC Ground Current per Ground Pin Storage Temperature Range Lead Temperature, 1 mm from Case for 10 Seconds Junction Temperature under Bias Thermal Resistance Power Dissipation in Still Air at 85_C Moisture Sensitivity Flammability Rating ESD Withstand Voltage Oxygen Index: 28 to 34 Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) (Note 1) VI 2000 > 200 N/A V Unit V V V mA mA mA mA mA _C _C _C _C/W mW
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximumrated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow. 2. Tested to EIA/JESD22A114A. 3. Tested to EIA/JESD22A115A. 4. Tested to JESD22C101A.
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VIN VIS TA tr, tf DC Supply Voltage Digital Select Input Voltage Analog Input Voltage (NC, NO, COM) Operating Temperature Range Input Rise or Fall Time, SELECT VCC = 3.3 V $ 0.3 V VCC = 5.0 V $ 0.5 V NORMALIZED FAILURE RATE Parameter Min 2.0 GND GND *55 0 0 Max 5.5 5.5 VCC )125 100 20 Unit V V V _C ns/V
DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES
Junction Temperature °C 80 90 100 110 120 130 140 Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0
FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130_C TJ = 120_C TJ = 100_C TJ = 110_C TJ = 90_C TJ = 80_C 100 TIME, YEARS
1 1 10 1000
Figure 2. Failure Rate vs. Time Junction Temperature
http://onsemi.com
2
NLAS325
DC CHARACTERISTICS Digital Section (Voltages Referenced to GND)
Guaranteed Limit Symbol VIH Parameter Minimum HighLevel Input Voltage, Select Inputs Condition VCC 2.0 2.5 3.0 4.5 5.5 VIL Maximum LowLevel Input Voltage, Select Inputs 2.0 2.5 3.0 4.5 5.5 IIN ICC Maximum Input Leakage Current, Select Inputs Maximum Quiescent Supply Current VIN = 5.5 V or GND Select and VIS = VCC or GND 0 V to 5.5 V 5.5 *55_C to 25_C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $0.2 4.0 t85_C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $2.0 4.0 t125_C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $2.0 8.0 mA mA V Unit V
DC ELECTRICAL CHARACTERISTICS Analog Section
Guaranteed Limit Symbol RON Parameter Maximum "ON" Resistance (Figures 16 22) Condition VIN = VIL or VIH VIS = GND to VCC IINI v 10.0 mA VCC 2.5 3.0 4.5 5.5 RFLAT (ON) ON Resistance Flatness (Figures 16 22) VIN = VIL or VIH IINI v 10.0 mA VIS = 1 V, 2 V, 3.5 V VIN = VIL or VIH VNO or VNC = 1.0 VCOM 4.5 V VIN = VIL or VIH VNO 1.0 V or 4.5 V with VNC floating or VNO 1.0 V or 4.5 V with VNO floating VCOM = 1.0 V or 4.5 V 4.5 *55_C to 25_C 85 45 30 25 4 t85_C 95 50 35 30 4 t125_C 105 55 40 35 5 W Unit W
INC(OFF) INO(OFF) ICOM(ON)
NO or NC Off Leakage Current (Figure 8) COM ON Leakage Current (Figure 8)
5.5 5.5
1 1
10 10
100 100
nA nA
http://onsemi.com
3
|
|
