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Details, datasheet, quote on part number:NSBC123JDXV6T5
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| Part: | NSBC123JDXV6T5 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => Bias Resistor Transistors |
| Description: | Dual NPN Bias Resistor Transistor in SOT-563 , Package: SOT-563, Pins=6 |
| Company: | ON Semiconductor |
| Datasheet: | Download NSBC123JDXV6T5 datasheet File size : 97 kB |
| Request For quote: | Find where to buy NSBC123JDXV6T5
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Datasheet text preview:
NSBC114EDXV6T1, NSBC114EDXV6T5
Preferred Devices
Dual Bias Resistor Transistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EDXV6T1 series, two BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.
(3) R1 Q1 Q2 R2 (4) R1 (5) NSBC114EDXV6T1 (6)
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(2) R2 (1)
· · · ·
Simplifies Circuit Design Reduces Board Space Reduces Component Count Lead-Free Solder Plating
6
54 23
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MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
SOT-563 CASE 463A PLASTIC
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad xx D Symbol PD 357 (Note 1) 2.9 (Note 1) Rq J A 350 (Note 1) mW mW/°C °C/W Max Unit xx = Specific Device Code (see table on following page) D = Date Code
ORDERING INFORMATION
Device Package Shipping 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel Max 500 (Note 1) 4.0 (Note 1) Unit mW mW/°C °C/W °C
Symbol PD
NSBC114EDXV6T1 SOT-563 NSBC114EDXV6T5 SOT-563
Rq J A TJ, Tstg
250 (Note 1) - 55 to +150
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2003
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March, 2003 - Rev. 3
Publication Order Number: NSBC114EDXV6/D
NSBC114EDXV6T1, NSBC114EDXV6T5
DEVICE MARKING AND RESISTOR VALUES
Device NSBC114EDXV6T1 NSBC124EDXV6T1 (Note 3) NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 (Note 2) NSBC143TDXV6T1 (Notes 2 and 3) NSBC113EDXV6T1 (Note 2) NSBC123EDXV6T1 (Notes 2 and 3) NSBC143EDXV6T1 (Notes 2 and 3) NSBC143ZDXV6T1 (Notes 2 and 3) NSBC124XDXV6T1 (Notes 2 and 3) NSBC123JDXV6T1 (Note 2) NSBC115EDXV6T1 (Notes 2 and 3) NSBC144WDXV6T1 (Notes 2 and 3) Package SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 Marking 7A 7B 7C 7D 7E 7F 7G 7H 7J 7K 7L 7M 7N 7P R1 (kW) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 R2 (kW) 10 22 47 47 1.0 2.2 4.7 47 47 47 100 22
2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Available upon request.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 nAdc nAdc mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
V(BR)CBO V(BR)CEO
Vdc Vdc
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NSBC114EDXV6T1, NSBC114EDXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 5)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) NSBC113EDXV6T1/NSBC123EDXV6T1 (IC = 10 mA, IB = 1 mA) NSBC114TDXV6T1/NSBC143TDXV6T1 NSBC143EDXV6T1/NSBC143ZDXV6T1/NSBC124XDXV6T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC144EDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1
VCE(sat)
VOL VOH NSBC113EDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC143ZDXV6T1 4.9 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 -
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Vdc
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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