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Details, datasheet, quote on part number:NSBC123JPDXV6T1
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Datasheet text preview:
NSBC114EPDXV6T1, NSBC114EPDXV6T5
Preferred Devices
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EPDXV6T1 series, two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.
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(3) R1 Q1 Q2 R2 (4) R1 (5) (6) (2) R2 (1)
· · · · ·
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54 23
Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch Tape and Reel Lead Free Solder Plating
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SOT-563 CASE 463A PLASTIC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, - minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
MARKING DIAGRAM
xx D
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature 1. FR-4 @ Minimum Pad Rq J A TJ, Tstg TA = 25°C Rq J A TA = 25°C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) - 55 to +150 Unit mW mW/°C °C/W
xx = Specific Device Code (see table on page 2) D = Date Code
ORDERING INFORMATION
Device Package Shipping 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel
NSBC114EPDXV6T1 SOT-563 NSBC114EPDXV6T5 SOT-563 Unit mW mW/°C °C/W °C
Symbol PD
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2003
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February, 2003 - Rev. 2
Publication Order Number: NSBC114EPDXV6/D
NSBC114EPDXV6T1, NSBC114EPDXV6T5
DEVICE MARKING AND RESISTOR VALUES
Device NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 (Note 2, 4) NSBC143TPDXV6T1 (Note 2, 4) NSBC113EPDXV6T1 (Note 2, 4) NSBC123EPDXV6T1 (Note 2, 4) NSBC143EPDXV6T1 (Note 2, 4) NSBC143ZPDXV6T1 (Note 2, 4) NSBC124XPDXV6T1 (Note 2, 4) NSBC123JPDXV6T1 (Note 2) Package SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 Marking 11 12 13 14 15 16 30 31 32 33 34 35 R1 (kW) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 R2 (kW) 10 22 47 47 1.0 2.2 4.7 47 47 47
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 nAdc nAdc mAdc Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1
V(BR)CBO V(BR)CEO
Vdc Vdc
hFE
35 60 80 80 160 160 3.0 8.0 15 80 80 80 -
60 100 140 140 350 350 5.0 15 30 200 150 140 -
0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) NSBC113EPDXV6T1/NSBC123EPDXV6T1 (IC = 10 mA, IB = 1 mA) NSBC114TPDXV6T1/NSBC143TPDXV6T1 NSBC143EPDXV6T1/NSBC143ZPDXV6T1/NSBC124XPDXV6T1
VCE(sat)
2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% 4. Available upon request.
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NSBC114EPDXV6T1, NSBC114EPDXV6T5
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Characteristic ON CHARACTERISTICS (Note 3) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 NSBC144EPDXV6T1 VOH NSBC113EPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC143ZPDXV6T1 NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 0.8 0.055 0.38 0.038 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 1.0 0.1 0.47 0.047 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 1.2 0.185 0.56 0.056 kW 4.9 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc Vdc Symbol Min Typ Max Unit
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Input Resistor
Resistor Ratio NSBC114EPDXV6T1/NSBC124EPDXV6T1/NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1/NSBC143TPDXV6T1 NSBC113EPDXV6T1/NSBC123EPDXV6T1/NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1
R1/R2
2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% 4. Available upon request.
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