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Details, datasheet, quote on part number:NT14N03R
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Datasheet text preview:
NTD14N03R Power MOSFET 14 Amps, 25 Volts
N-Channel DPAK
Features
· · · · ·
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters
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14 AMPERES, 25 VOLTS RDS(on) = 70.4 mW (Typ)
N-CHANNEL D
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance - Junction-to-Case Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C, Chip - Continuous @ TA = 25°C, Limited by Package - Single Pulse (tp 10 ms) Thermal Resistance - Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C Thermal Resistance - Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS Rq J C PD ID ID ID Rq J A PD ID Rq J A PD ID TJ, Tstg TL Value 25 ±20 6.0 20.8 14 11.4 28 80 1.56 3.1 120 1.04 2.5 -55 to 150 260 Unit Vdc Vdc °C/W W A A A °C/W W A °C/W W A °C °C 12 3 CASE 369C DPAK (Surface Mount) STYLE 2 S 4 4 G
1 2 3 CASE 369D DPAK (Straight Lead) STYLE 2
MARKING DIAGRAM & PIN ASSIGNMENTS
4 Drain YWW T14 N03 4 Drain YWW T14 N03 3 Source 1 Gate 2 Drain 3 Source Package DPAK DPAK Straight Lead DPAK Shipping 75 Units/Rail 75 Units/Rail 2500 Tape & Reel Publication Order Number: NTD14N03R/D
1. When surface mounted to an FR4 board using 0.5 sq. in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. 1 Gate
2 Drain
14N03 Y WW
= Device Code = Year = Work Week
ORDERING INFORMATION
Device NTD14N03R NTD14N03R-1 NTD14N03RT4
© Semiconductor Components Industries, LLC, 2003
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October, 2003 - Rev. 3
NTD14N03R
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristics OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 4.5 Vdc, ID = 5 Adc) (VGS = 10 Vdc, ID = 5 Adc) Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VGS = 5 Vdc, ID = 5 Adc, VDS = 10 Vdc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 5 Adc, VGS = 0 Vdc) (Note 3) (IS = 5 Adc, VGS = 0 Vdc, TJ = 125°C) VSD - - trr (IS = 5 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. ta tb QRR - - - - 0.93 0.82 6.6 4.75 1.88 0.002 1.2 - - - - - mC Vdc (VGS = 10 Vdc, VDD = 10 Vdc, ID = 5 Adc, RG = 3 W) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 3.8 27 9.6 2.0 1.8 0.8 0.7 - - - - - - - nC ns (VDS = 20 Vdc, VGS = 0 V, f = 1 MHz) , , ) Ci s s Co s s Crss - - - 115 62 33 - - - pF VGS(th) 1.0 - RD S ( o n ) - - gFS - 7.0 - 117 70.4 130 95 Mhos 1.5 - 2.0 - Vdc mV/°C mW V(br)DSS 25 - IDSS - - IGSS - - - - 1.0 10 ±100 nAdc 28 - - - Vdc mV/°C mAdc Symbol Min Typ Max Unit
Reverse Recovery Time
ns
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2
NTD14N03R
14 ID, DRAIN CURRENT (AMPS) 12 10 8 6 4 3V 2 VGS = 2.5 V 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 V 8V 7V 6V 14 5V ID, DRAIN CURRENT (AMPS) 12 10 8 6 TJ = 25°C 4 2 TJ = 125°C TJ = -55°C VDS 10 V
4.5 V 4V 3.5 V
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.20 VGS = 10 V 0.16
0.20 TJ = 125°C 0.16 TJ = 25°C
0.12
TJ = 125°C TJ = 25°C TJ = -55°C
0.12
0.08
0.08
TJ = -55°C
0.04 0 0 2 4 6 8 10 12 14 ID, DRAIN CURRENT (AMPS)
0.04 VGS = 4.5 V 0 0 2 4 6 8 10 12 14 ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Drain Current and Temperature
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 0 ID = 5 A VGS = 10 V IDSS, LEAKAGE (nA) 1000
Figure 4. On-Resistance versus Drain Current and Temperature
VGS = 0 V
TJ = 150°C
100
TJ = 125°C
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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