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Details, datasheet, quote on part number:NTD20N03L27-001
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Datasheet text preview:
NTD20N03L27 Power MOSFET 20 Amps, 30 Volts
NChannel DPAK
This logic level vertical power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The draintosource diode has a ideal fast but soft recovery.
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UltraLow RDS(on), single base, advanced technology SPICE parameters available Diode is characterized for use in bridge circuits IDSS and VDS(on) specified at elevated temperatures High Avalanche Energy Specified ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0 Power Supplies Inductive Loads PWM Motor Controls Replaces MTD20N03L in many applications
20 AMPERES 30 VOLTS RDS(on) = 27 m
NChannel D
Typical Applications
G S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GatetoSource Voltage Continuous NonRepetitive (tpv10 ms) Drain Current Continuous @ TA = 25_C Continuous @ TA = 100_C Single Pulse (tpv10 µs) Total Power Dissipation @ TA = 25_C Derate above 25°C Total Power Dissipation @ TC = 25°C (Note 1.) Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5 Vdc, L = 1.0 mH, IL(pk) = 24 A, VDS = 34 Vdc) Thermal Resistance JunctiontoCase JunctiontoAmbient JunctiontoAmbient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGS ID ID IDM PD Value 30 30 "20 "24 20 16 60 74 0.6 1.75 55 to 150 288 Adc Apk Watts W/°C W °C mJ 1 Gate 2 Drain Unit Vdc Vdc Vdc 12 3 20N3L Y WW 4 CASE 369A DPAK STYLE 2 = Device Code = Year = Work Week
MARKING DIAGRAM
YWW 20N3L
PIN ASSIGNMENT
4 Drain
TJ, Tstg EAS
°C/W RJC RJA RJA TL 1.67 100 71.4 260 °C
3 Source
ORDERING INFORMATION
Device NTD20N03L27 NTD20N03L271 NTD20N03L27T4 Package DPAK DPAK DPAK Shipping 75 Units/Rail 75 Units/Rail 2500 Tape & Reel
1. When surface mounted to an FR4 board using the minimum recommended pad size and repetitive rating; pulse width limited by maximum junction temperature.
© Semiconductor Components Industries, LLC, 2001
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January, 2001 Rev. 0
Publication Order Number: NTD20N03L27/D
NTD20N03L27
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 2.) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ =150°C) GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (Note 2.) (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 2.) (VGS = 4.0 Vdc, ID = 10 Adc) (VGS = 5.0 Vdc, ID = 10 Adc) Static DraintoSource OnResistance (Note 2.) (VGS = 5.0 Vdc, ID = 20 Adc) (VGS = 5.0 Vdc, ID = 10 Adc, TJ = 150°C) Forward Transconductance (Note 2.) (VDS = 5.0 Vdc, ID = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 15 Adc, 48 Vd 15 Ad VGS = 10 Vdc) (Note 2.) SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 20 Adc, VGS = 0 Vdc) (Note 2.) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS =15 Adc, VGS = 0 Vdc, =15 Adc Vdc dlS/dt = 100 A/µs) (Note 2.) Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. trr ta tb Q RR VSD 1.0 0.9 23 13 10 0.017 1.15 µC ns Vdc (VDD = 20 Vdc, ID = 20 Adc, VGS = 5.0 Vdc, 5 0 Vdc RG = 9.1 ) (Note 2.) td(on) tr td(off) tf QT Q1 Q2 17 137 38 31 13.8 2.8 6.6 25 160 45 40 18.9 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 1005 271 87 1260 420 112 pF VGS(th) 1.0 RDS(on) VDS(on) gFS 0.48 0.40 21 0.54 mhos 28 23 31 27 Vdc 1.6 5.0 2.0 Vdc mV/°C m V(BR)DSS 30 IDSS IGSS 10 100 ±100 nAdc 43 Vdc mV/°C µAdc Symbol Min Typ Max Unit
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NTD20N03L27
40 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 35 30 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VDS, DRAINTOSOURCE VOLTAGE (V) TJ = 25°C VGS = 3 V VGS = 2.5 V VGS = 10 V VGS = 8 V VGS = 4 V VGS = 4.5 V VGS = 5 V VGS = 3.5 V VGS = 6 V 40 36 32 28 24 20 16 12 8 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 TJ = 100°C TJ = 25°C VDS > = 10 V
TJ = 55°C
VGS, GATETOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
RDS(on), DRAINTOSOURCE RESISTANCE () RDS(on), DRAINTOSOURCE RESISTANCE ()
Figure 2. Transfer Characteristics
0.04 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 2 5 8 12 15 18 22 25 28 32 35 38 ID, DRAIN CURRENT (AMPS) TJ = 25°C TJ = 55°C VGS = 5 V TJ = 100°C
0.03 TJ = 25°C VGS = 5 V
0.025
0.02 VGS = 10 V
0.015
0.01 0 4 8 12 16 20 24 28 32 36 40 ID, DRAIN CURRENT (AMPS)
RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED)
Figure 3. OnResistance vs. Drain Current and Temperature
1.6 ID = 10 A VGS = 5 V IDSS, LEAKAGE (nA) 100 1000
Figure 4. OnResistance vs. Drain Current and Gate Voltage
VGS = 0 V TJ = 125°C
1.4
1.2
1
TJ = 100°C 10
0.8
0.6 50
1 25 0 25 50 75 100 125 150 0 3 6 9 12 15 18 21 24 27 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 5. OnResistance Variation with Temperature
Figure 6. DraintoSource Leakage Current vs. Voltage
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