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Details, datasheet, quote on part number:NTD20N06-001
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| Part: | NTD20N06-001 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Power MOSFET 20 Amps, 60 Volts, Package: Dpak, Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download NTD20N06-001 datasheet File size : 92 kB |
| Request For quote: | Find where to buy NTD20N06-001
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Datasheet text preview:
NTD20N06 Power MOSFET 20 Amps, 60 Volts
NChannel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features http://onsemi.com
· · · · · · · · · · ·
Lower RDS(on) Lower VDS(on) Lower Capacitances Lower Total Gate Charge Lower and Tighter VSD Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge Power Supplies Converters Power Motor Controls Bridge Circuits
12 3
20 AMPERES 60 VOLTS RDS(on) = 46 m
NChannel D
Typical Applications
G S 4 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 10 M) GatetoSource Voltage Continuous Nonrepetitive (tpv10 ms) Drain Current Continuous @ TA = 25°C Continuous @ TA = 100°C Single Pulse (tpv10 µs) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1.) Total Power Dissipation @ TA = 25°C (Note 2.) Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 18.4 A, VDS = 60 Vdc) Thermal Resistance JunctiontoCase JunctiontoAmbient (Note 1.) JunctiontoAmbient (Note 2.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGS ID ID IDM PD Value 60 60 "20 "30 Adc 20 10 60 60 0.40 1.88 1.36 55 to 175 170 Unit Vdc Vdc Vdc
1
2
3
CASE 369A DPAK (Bent Lead) STYLE 2 NTD20N06 Y WW
CASE 369 DPAK (Straight Lead) STYLE 2 = Device Code = Year = Work Week
Apk W W/°C W W °C mJ
MARKING DIAGRAMS & PIN ASSIGNMENTS
4 Drain 4 Drain YWW NTD 20N06 1 Gate 2 Drain 3 Source 1 Gate 2 Drain YWW NTD 20N06
TJ, Tstg EAS
°C/W RJC RJA RJA TL 2.5 80 110 260 °C
3 Source
ORDERING INFORMATION
Device NTD20N06 NTD20N061 NTD20N06T4 Package DPAK DPAK Straight Lead DPAK Shipping 75 Units/Rail 75 Units/Rail 2500 Tape & Reel
1. When surface mounted to an FR4 board using 1 pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).
© Semiconductor Components Industries, LLC, 2001
1
August, 2001 Rev. 4
Publication Order Number: NTD20N06/D
NTD20N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note NO TAG) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note NO TAG) Gate Threshold Voltage (Note NO TAG) (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note NO TAG) (VGS = 10 Vdc, ID = 10 Adc) Static DraintoSource OnVoltage (Note NO TAG) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 10 Adc, TJ = 150°C) Forward Transconductance (Note NO TAG) (VDS = 7.0 Vdc, ID = 6.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note NO TAG) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 20 Adc, 48 Vd 20 Ad VGS = 10 Vdc) (Note NO TAG) SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 20 Adc, VGS = 0 Vdc) (Note NO TAG) (IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C) (IS = 20 Adc, VGS = 0 Vdc, Vd 20 Ad dIS/dt = 100 A/µs) (Note NO TAG) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. VSD 1.0 0.87 42.9 33 9.9 0.084 1.2 µC Vdc (VDD = 30 Vdc, ID = 20 Adc, VGS = 10 Vdc, 10 Vdc RG = 9.1 ) (Note NO TAG) td(on) tr td(off) tf QT Q1 Q2 9.5 60.5 27.1 37.1 21.2 5.6 7.3 20 120 60 80 30 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 725 213 58 1015 300 120 pF VGS(th) 2.0 RDS(on) VDS(on) gFS 0.78 1.57 13.2 1.10 mhos 37.5 46 Vdc 2.91 6.9 4.0 Vdc mV/°C m V(BR)DSS 60 IDSS IGSS 1.0 10 ±100 nAdc 71.7 79.4 Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time
trr ta tb Q RR
ns
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NTD20N06
40 ID, DRAIN CURRENT (AMPS)
VGS = 10 V 9V
7V
40 6.5 V ID, DRAIN CURRENT (AMPS) 32 VDS 10 V
32 8V 24 5.5 V 16 5V 8 4.5 V 0 6V
24
16 TJ = 25°C TJ = 100°C TJ = 55°C 4.2 5 5.8 6.6 7.4
8
0
1
2
3
4
5
0 2.6
3.4
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on), DRAINTOSOURCE RESISTANCE () RDS(on), DRAINTOSOURCE RESISTANCE ()
Figure 2. Transfer Characteristics
0.065 VGS = 10 V 0.055 TJ = 100°C 0.045
0.065 VGS = 15 V 0.055 TJ = 100°C 0.045
0.035
TJ = 25°C
0.035
TJ = 25°C
0.025 TJ = 55°C 0.015 0 8 16 24 32 40
0.025
TJ = 55°C 0 8 16 24 32 40
0.015
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus GatetoSource Voltage
RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 50 25 1 0 25 50 75 100 125 150 175 0 10000 ID = 10 A VGS = 10 V IDSS, LEAKAGE (nA) 1000
Figure 4. OnResistance versus Drain Current and Gate Voltage
VGS = 0 V TJ = 150°C
TJ = 125°C 100 TJ = 100°C 10
10
20
30
40
50
60
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DraintoSource Leakage Current versus Voltage
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