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Details, datasheet, quote on part number:NTD20N06LT4
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| Part: | NTD20N06LT4 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Power MOSFET 20 Amps, 60 Volts, Logic Level N-channel Dpak, Package: Dpak Single Gauge Surface Mount, Pins=4 |
| Company: | ON Semiconductor |
| Datasheet: | Download NTD20N06LT4 datasheet File size : 92 kB |
| Request For quote: | Find where to buy NTD20N06LT4
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Datasheet text preview:
NTD20N06L Power MOSFET 20 Amps, 60 Volts, Logic Level
N-Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Typical Applications http://onsemi.com
V(BR)DSS 60 V RDS(on) TYP 39 mW@5.0 V ID MAX 20 A (Note 1)
· · · ·
Power Supplies Converters Power Motor Controls Bridge Circuits
N-Channel D Value 60 60 "15 "20 20 10 60 60 0.40 1.88 1.36 - 55 to +175 128 Adc Apk W W/°C W W °C mJ 4 12 3 DPAK CASE 369C Style 2 4 Unit Vdc Vdc Vdc VGS VGS ID ID IDM PD G S Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 10 M) Gate-to-Source Voltage - Continuous - Non-repetitive (tpv10 ms) Drain Current - Continuous @ TA = 25°C - Continuous @ TA = 100°C - Single Pulse (tpv10 µs) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1.) Total Power Dissipation @ TA = 25°C (Note 2.) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, L = 1.0 mH, IL(pk) = 16 A, VDS = 60 Vdc) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1.) - Junction-to-Ambient (Note 2.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
MARKING DIAGRAMS
4 Drain YWW 20N06L 2 1 3 Drain Gate Source 4 Drain 123 Gate Drain Source Package DPAK DPAK Straight Lead DPAK 2500 Tape & Reel Publication Order Number: NTD20N06L/D YWW 20N06L Shipping 75 Units/Rail 75 Units/Rail
TJ, Tstg EAS
°C/W R J C R J A R J A TL 2.5 80 110 260 °C 1 3 DPAK CASE 369D Style 2 20N06L Y WW Device Code = Year = Work Week 2
1. When surface mounted to an FR4 board using 1 pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using recommended pad size, (Cu Area 0.412 in2).
ORDERING INFORMATION
Device NTD20N06L NTD20N06L-1 NTD20N06LT4
© Semiconductor Components Industries, LLC, 2003
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August, 2003 - Rev. 1
NTD20N06L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3.) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate-Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3.) Gate Threshold Voltage (Note 3.) (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3.) (VGS = 5.0 Vdc, ID = 10 Adc) Static Drain-to-Source On-Resistance (Note 3.) (VGS = 5.0 Vdc, ID = 20 Adc) (VGS = 5.0 Vdc, ID = 10 Adc, TJ = 150°C) Forward Transconductance (Note 3.) (VDS = 4.0 Vdc, ID = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 20 Adc, 48 Vd 20 Ad VGS = 5.0 Vdc) (Note 3.) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Reverse Recovery Time (IS = 20 Adc, VGS = 0 Vdc, 20 Ad Vd dIS/dt = 100 A/µs) (Note 3.) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. (IS = 20 Adc, VGS = 0 Vdc) (Note 3.) (IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C) VSD trr ta tb QRR - - - - - - 0.97 0.85 42 30 12 0.066 1.2 - - - - - µC Vdc ns (VDD = 30 Vdc, ID = 20 Adc, VGS = 5.0 Vdc, 5 0 Vdc RG = 9.1 ) (Note 3.) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 9.6 98 25 62 16.6 5.5 8.5 20 200 50 120 32 - - nC ns (VDS = 25 Vdc, VGS = 0 Vdc, 25 Vd Vd f = 1.0 MHz) Ci s s Co s s Crss - - - 707 224 72 990 320 105 pF VGS(th) 1.0 - RD S ( o n ) - VDS(on) - - gFS - 0.81 0.72 17.5 1.66 - - mhos 39 48 Vdc 1.6 4.6 2.0 - Vdc mV/°C m V(BR)DSS 60 - IDSS - - IGSS - - - - 1.0 10 ±100 nAdc 71.3 71.2 - - Vdc mV/°C µAdc Symbol Min Typ Max Unit
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NTD20N06L
40 VGS = 10 V 8V 30 6V 4V 20 4.5 V 5V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
40 VDS 10 V 30
20
10
3.5 V
10
TJ = 25°C TJ = 100°C
3V 0 0 1 2 3 4 5 0 1.6 2.4
TJ = -55°C 3.2 4 4.8 5.6
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE ()
Figure 2. Transfer Characteristics
0.085 VGS = 5 V 0.075 0.065 0.055 0.045 0.035 TJ = -55°C 0.025 0.015 0 10 20 30 40 TJ = 25°C TJ = 100°C
0.085 0.075 0.065 0.055 0.045 0.035 0.025 0.015 TJ = 25°C TJ = -55°C 0 10 20 30 40 TJ = 100°C VGS = 10 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Gate-to-Source Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 10 0 25 50 75 100 125 150 175 0 10000 ID = 10 A VGS = 5 V IDSS, LEAKAGE (nA) 1000
Figure 4. On-Resistance versus Drain Current and Gate Voltage
VGS = 0 V TJ = 150°C
100 TJ = 100°C
10
20
30
40
50
60
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
http://onsemi.com
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