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Details, datasheet, quote on part number:NTD20P06L
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| Part: | NTD20P06L |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | TMOS7, Power MOSFET, 60V, Package: Dpak, Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download NTD20P06L datasheet File size : 71 kB |
| Request For quote: | Find where to buy NTD20P06L
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Datasheet text preview:
NTD20P06L Power MOSFET
60 V, 15 A, Single P-Channel, DPAK
Features
· Withstands High Energy in Avalanche and Commutation Modes · Low Gate Charge for Fast Switching
Applications
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ID MAX Note 1 -15 A
· Bridge Circuits · Power Supplies, Power Motor Controls · DC-DC Conversion
Maximum Ratings (TJ = 25°C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Continuous Non-Repetitive Steady State tp v10 ms TA = 25°C Symbol VDSS VGS VGSM ID Value -60 $15 $20 -15 A Unit V
V(BR)DSS -60 V
RDS(on) TYP 130 mW @ -5.0 V
N-Channel D
G V S
MARKING DIAGRAMS
Steady State TA = 25°C PD IDM TJ, TSTG EAS 54 $50 -55 to 150 304 W A °C mJ 12 3 DPAK CASE 369C Style 2 4 4 4 Drain YWW T 20P06L 2 1 3 Drain Gate Source 4 Drain 1 Symbol Rq J C Rq J A Rq J A Max 2.3 80 110 Unit °C/W YWW T 20P06L 123 Gate Drain Source Publication Order Number: NTD20P06L/D
tp = 10 ms
Operating Junction and Storage Temperature Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 V, VGS = 5 V, IPK = 15 A, L = 2.7 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
TL
260
°C 2
Thermal Resistance Ratings
Parameter Junction-to-Case (Drain) Junction-to-Ambient Steady State (Note 1) Junction-to-Ambient Steady State (Note 2)
3 DPAK CASE 369D Style 2 20P06L Y WW Device Code = Year = Work Week
1. S u r f a c e - m o u n t e d on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq.)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2003
1
July, 2003 - Rev. 0
NTD20P06L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS VGS = 0 V, VDS = -60 V TJ = 25°C TJ = 150°C VGS = 0 V, ID = -250 mA -60 -74 -64 -1.0 -10 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Units
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance
IGSS
VDS = 0 V, VGS = ±15 V
VGS(TH) VGS(TH)/ TJ RD S ( o n )
VGS = VDS, ID = -250 mA
-1.0
-1.5 3.1
-2.0
V mV/°C
VGS = -5.0 V, ID = -7.5 A VGS = -5.0 V, ID = -15 A
0.130 0.143 11
0.150
W
Forward Transconductance Drain-to-Source On-Voltage
gFS VDS(on)
VDS = -10 V, ID = -7.5 A VGS = -5.0 V, ID = -7.5 A TJ = 25°C TJ = 150°C
S -1.2 -1.9 V
CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = -15 A V 15 TJ = 25°C TJ = 150°C 1.5 1.3 60 VGS = 0 V, dIS/dt = 100 A/ms, IS = -12 A 39 21 0.13 nC ns 2.5 V td(ON) tr td(OFF) tf VGS = -5.0 V, VDD = -30 V, ID = -15 A, RG = 9.1 W 11 90 28 70 20 180 50 135 ns CI S S COSS CR S S QG(TOT) QGS QGD VGS = -5.0 V, VDS = -48 V, ID = -18 A , , VGS = 0 V, f = 1 MHz, VDS = -25 V , , 740 207 66 15 4.0 7.0 1190 300 120 26 nC pF
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
tRR ta tb QRR
3. Pulse Test: pulse width v 300 ms, duty cycle v 2% 4. Switching characteristics are independent of operating junction temperatures
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NTD20P06L
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted) 40 35 -ID, DRAIN CURRENT (A) VGS = -9 V 30 VGS = -8 V 25 20 15 10 5 0 0 1 2 3 4 5 6 7 VGS = -4 V VGS = -3.5 V VGS = -3 V TJ = 25°C 8 9 10 VGS = -7 V 40 VGS = -10 V VGS = -6 V -ID, DRAIN CURRENT (A) VGS = -5.5 V VGS = -5 V VGS = -4.5 V 30 TJ = 25°C 20 TJ = 125°C TJ = -55°C
10 VDS w 10 V 0 1 2 3 4 5 6 7 8 9
0
-VDS, DRAIN-TO-SOURCE VOLTAGE (V)
-VDS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 5 10 15 20 25 -ID, DRAIN CURRENT (A) TJ = 25°C TJ = -55°C TJ = 125°C VGS = -5 V 0.25 0.225 0.2 0.175 0.15 0.125 0.1 0.075 0.05 0.025 0 0
Figure 2. Transfer Characteristics
TJ = 25°C
VGS = -5 V VGS = -10 V
30
3
6
9
12
15
18
21
24
-ID, DRAIN CURRENT (A)
Figure 3. On-Resistance versus Drain Current and Temperature
Figure 4. On-Resistance versus Drain Current and Gate Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 ID = -7.5 A VGS = -5 V
10000 VGS = 0 V 1000 TJ = 150°C
-ID, LEAKAGE (nA)
TJ = 125°C 100
10
1 -25 0 25 50 75 100 125 150 5 10 15 20 25 30 35 40 45 50 55 60 TJ, JUNCTION TEMPERATURE (°C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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